Patents by Inventor Jui-Chien Huang
Jui-Chien Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942513Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.Type: GrantFiled: January 10, 2022Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Jui-Chien Huang
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Patent number: 11942478Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.Type: GrantFiled: May 6, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
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Publication number: 20240096895Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
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Publication number: 20240072115Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.Type: ApplicationFiled: February 13, 2023Publication date: February 29, 2024Inventors: Wei-Xiang You, Wei-De Ho, Hsin Yang Hung, Meng-Yu Lin, Hsiang-Hung Huang, Chun-Fu Cheng, Kuan-Kan Hu, Szu-Hua Chen, Ting-Yun Wu, Wei-Cheng Tzeng, Wei-Cheng Lin, Cheng-Yin Wang, Jui-Chien Huang, Szuya Liao
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Patent number: 11855096Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.Type: GrantFiled: April 25, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
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Publication number: 20230411218Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.Type: ApplicationFiled: August 1, 2023Publication date: December 21, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang
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Patent number: 11837506Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.Type: GrantFiled: November 23, 2020Date of Patent: December 5, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang
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Publication number: 20230386936Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.Type: ApplicationFiled: August 7, 2023Publication date: November 30, 2023Inventors: Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou, Chun-Hsiung Lin, Pei-Hsun Wang
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Publication number: 20230387120Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.Type: ApplicationFiled: August 3, 2023Publication date: November 30, 2023Inventors: Jui-Chien HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG, Shi Ning JU, Guan-Lin CHEN
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Publication number: 20230369054Abstract: A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.Type: ApplicationFiled: July 25, 2023Publication date: November 16, 2023Inventors: Chun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
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Publication number: 20230345693Abstract: An integrated circuit includes a plurality of SRAM cells. Each SRAM cell includes a first inverter having a first N-type transistor and a first P-type transistor stacked vertically in a first active region. The SRAM cell includes a second inverter cross-coupled with the first inverter and including a second N-type transistor and a second P-type transistor stacked vertically in a second active region. The SRAM cell includes a butt contact electrically connecting an output of the first inverter to an input of the second inverter. The butt contact is at least partially within a first active region.Type: ApplicationFiled: February 2, 2023Publication date: October 26, 2023Inventors: Cheng-Yin WANG, Szuya Liao, Jui-Chien Huang
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Publication number: 20230307285Abstract: A semiconductor device with isolation structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second FETs, an isolation structure, and a conductive structure. The first FET includes a first fin structure, a first array of gate structures disposed on the first fin structure, and a first array of S/D regions disposed on the first fin structure. The second FET includes a second fin structure, a second array of gate structures disposed on the second fin structure, and a second array of S/D regions disposed on the second fin structure. The isolation structure includes a fill portion and a liner portion disposed between the first and second FETs and in physical contact with the first and second arrays of gate structures. The conductive structure is disposed in the liner portion and conductively coupled to a S/D region of the second array of S/D regions.Type: ApplicationFiled: August 19, 2022Publication date: September 28, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jui-Chien Huang, Sandy Szuya Liao, Cheng-Yin Wang, Wei-Cheng Lin, Wei-Chen Tzeng
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Patent number: 11764065Abstract: A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.Type: GrantFiled: April 18, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
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Publication number: 20230260849Abstract: Self-aligned gate cutting techniques for multigate devices are disclosed herein that provide multigate devices having asymmetric metal gate profiles and asymmetric source/drain feature profiles. An exemplary multigate device has a channel layer, a metal gate that wraps a portion of the channel layer, and source/drain features disposed over a substrate. The channel layer extends along a first direction between the source/drain features. A first dielectric fin and a second dielectric fin are disposed over the substrate and configured differently. The channel layer extends along a second direction between the first dielectric fin and the second dielectric fin. The metal gate is disposed between the channel layer and the second dielectric fin. In some embodiments, the first dielectric fin is disposed on a first isolation feature, and the second dielectric fin is disposed on a second isolation feature. The first isolation feature and the second isolation feature are configured differently.Type: ApplicationFiled: April 24, 2023Publication date: August 17, 2023Inventors: Guan-Lin Chen, Chih-Hao Wang, Ching-Wei Tsai, Shi Ning Ju, Jui-Chien Huang, Kuo-Cheng Chiang, Kuan-Lun Cheng
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Patent number: 11721594Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.Type: GrantFiled: June 8, 2022Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou, Chun-Hsiung Lin, Pei-Hsun Wang
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Patent number: 11695076Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.Type: GrantFiled: March 5, 2021Date of Patent: July 4, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
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Publication number: 20230178435Abstract: A method includes forming a first transistor of a first semiconductor device. The first semiconductor device includes a first channel region and a gate electrode on the first channel region. A second semiconductor device is bonded to the first semiconductor device by a bonding layer disposed between the first and second semiconductor devices. A second transistor of the second semiconductor device is formed that includes a second channel region and a second gate electrode on the second channel region. The bonding layer is disposed between the first gate electrode of the first transistor and the second gate electrode of the second transistor.Type: ApplicationFiled: July 8, 2022Publication date: June 8, 2023Inventors: Jui-Chien HUANG, Szuya LIAO, Cheng-Yin WANG, Shih Hao WANG
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Publication number: 20230145872Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.Type: ApplicationFiled: December 14, 2022Publication date: May 11, 2023Inventors: Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
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Patent number: 11637042Abstract: Self-aligned gate cutting techniques for multigate devices are disclosed herein that provide multigate devices having asymmetric metal gate profiles and asymmetric source/drain feature profiles. An exemplary multigate device has a channel layer, a metal gate that wraps a portion of the channel layer, and source/drain features disposed over a substrate. The channel layer extends along a first direction between the source/drain features. A first dielectric fin and a second dielectric fin are disposed over the substrate and configured differently. The channel layer extends along a second direction between the first dielectric fin and the second dielectric fin. The metal gate is disposed between the channel layer and the second dielectric fin. In some embodiments, the first dielectric fin is disposed on a first isolation feature, and the second dielectric fin is disposed on a second isolation feature. The first isolation feature and the second isolation feature are configured differently.Type: GrantFiled: February 11, 2021Date of Patent: April 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang, Kuan-Lun Cheng, Ching-Wei Tsai, Shi Ning Ju, Jui-Chien Huang
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Patent number: 11610977Abstract: A device includes a first channel layer over a semiconductor substrate, a second channel layer over the first channel layer, and a third channel layer over the second channel layer. The channel layers each connects a first and a second source/drain along a first direction. The device also includes a first gate portion between the first and second channel layers; a second gate portion between the second and third channel layers; a first inner spacer between the first and second channel layers and between the first gate portion and the first source/drain; and a second inner spacer between the second and third channel layers and between the second gate portion and the first source/drain. The first and second gate portions have substantially the same gate lengths along the first direction. The first inner spacer has a width along the first direction that is greater than the second inner spacer has.Type: GrantFiled: July 28, 2020Date of Patent: March 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen