Patents by Inventor Jui-Chien Huang
Jui-Chien Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210066473Abstract: A semiconductor device is provided. The semiconductor device includes a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another, a source/drain structure adjoining the plurality of channel layers, a gate structure wrapping around the plurality of channel layers, and a first inner spacer between the gate structure and the source/drain structure and between the plurality of channel layers. The first inner spacer is made of an oxide of a semiconductor material.Type: ApplicationFiled: October 27, 2020Publication date: March 4, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsiung LIN, Pei-Hsun WANG, Chih-Hao WANG, Kuo-Cheng CHING, Jui-Chien HUANG
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Publication number: 20210066294Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.Type: ApplicationFiled: July 17, 2020Publication date: March 4, 2021Inventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
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Patent number: 10847373Abstract: A method includes forming a first dielectric layer over a semiconductor fin protruding from a substrate, forming a second dielectric layer over the first dielectric layer, then removing a portion of the semiconductor fin to form a first recess defined by portions of the first dielectric layer, followed by removing that portions of the first dielectric layer that define the first recess. Thereafter, the method proceeds to forming an epitaxial source/drain (S/D) feature in the first recess, removing the second dielectric layer to form a second recess that is disposed between the epitaxial S/D feature and remaining portions of the first dielectric layer, and subsequently forming a silicide layer over the epitaxial S/D feature, such that the silicide layer wraps around the epitaxial S/D feature.Type: GrantFiled: June 18, 2019Date of Patent: November 24, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
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Patent number: 10847426Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.Type: GrantFiled: October 28, 2018Date of Patent: November 24, 2020Assignee: Taiwan Semicondutor Manufacturing Company, Ltd.Inventors: Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang
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Patent number: 10825919Abstract: A method of fabricating semiconductor devices is provided. The method includes forming a fin structure on a substrate, in which the fin structure includes a fin stack of alternating first and second semiconductor layers and forming recesses in the fin stack at source and drain regions. The method also includes etching the second semiconductor layers to form recessed second semiconductor layers, and forming third semiconductor layers on sidewalls of the recessed second semiconductor layers. The method further includes epitaxially growing source and drain structures in the recesses, removing the recessed second semiconductor layers to form spaces between the first semiconductor layers, and oxidizing the third semiconductor layers to form inner spacers. In addition, the method includes forming a gate structure to fill the spaces and to surround the first semiconductor layers.Type: GrantFiled: February 21, 2019Date of Patent: November 3, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hsiung Lin, Pei-Hsun Wang, Chih-Hao Wang, Kuo-Cheng Ching, Jui-Chien Huang
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Patent number: 10804162Abstract: A method that includes forming first semiconductor layers and second semiconductor layers disposed over a substrate, wherein the first and second semiconductor layers have different material compositions, are alternatingly disposed, and extend over first and second regions of the substrate; patterning the first and the second semiconductor layers to form a first fin in the first region and a second fin in the second region; removing the first semiconductor layers from the first and second fins such that a first portion of the patterned second semiconductor layers becomes first suspended nanostructures in the first fin and that a second portion of the patterned second semiconductor layers becomes second suspended nanostructures in the second fin; forming third semiconductor layers on the second suspended nanostructures in the second fin; and performing an anneal process to drive materials contained in the third semiconductor layers into corresponding second suspended nanostructures in the second fin.Type: GrantFiled: March 27, 2019Date of Patent: October 13, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hao Wang, Jui-Chien Huang, Chun-Hsiung Lin, Kuo-Cheng Chiang, Chih-Chao Chou, Pei-Hsun Wang
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Publication number: 20200273964Abstract: A method of fabricating semiconductor devices is provided. The method includes forming a fin structure on a substrate, in which the fin structure includes a fin stack of alternating first and second semiconductor layers and forming recesses in the fin stack at source and drain regions. The method also includes etching the second semiconductor layers to form recessed second semiconductor layers, and forming third semiconductor layers on sidewalls of the recessed second semiconductor layers. The method further includes epitaxially growing source and drain structures in the recesses, removing the recessed second semiconductor layers to form spaces between the first semiconductor layers, and oxidizing the third semiconductor layers to form inner spacers. In addition, the method includes forming a gate structure to fill the spaces and to surround the first semiconductor layers.Type: ApplicationFiled: February 21, 2019Publication date: August 27, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hsiung LIN, Pei-Hsun WANG, Chih-Hao WANG, Kuo-Cheng CHING, Jui-Chien HUANG
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Publication number: 20200144133Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.Type: ApplicationFiled: January 8, 2020Publication date: May 7, 2020Inventors: Chih-Hao Wang, Jui-Chien Huang, Chun-Hsiung Lin, Kuo-Cheng Chiang, Chih-Chao Chou, Pei-Hsun Wang
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Publication number: 20200135932Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate; an isolation structure at least partially surrounding the fin; an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, wherein an extended portion of the epitaxial S/D feature extends over the isolation structure; and a silicide layer disposed on the epitaxial S/D feature, the silicide layer continuously surrounding the extended portion of the epitaxial S/D feature over the isolation structure.Type: ApplicationFiled: September 25, 2019Publication date: April 30, 2020Inventors: Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
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Publication number: 20200135584Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.Type: ApplicationFiled: October 28, 2018Publication date: April 30, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang
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Publication number: 20200126798Abstract: A method includes forming a first dielectric layer over a semiconductor fin protruding from a substrate, forming a second dielectric layer over the first dielectric layer, then removing a portion of the semiconductor fin to form a first recess defined by portions of the first dielectric layer, followed by removing that portions of the first dielectric layer that define the first recess. Thereafter, the method proceeds to forming an epitaxial source/drain (S/D) feature in the first recess, removing the second dielectric layer to form a second recess that is disposed between the epitaxial S/D feature and remaining portions of the first dielectric layer, and subsequently forming a silicide layer over the epitaxial S/D feature, such that the silicide layer wraps around the epitaxial S/D feature.Type: ApplicationFiled: June 18, 2019Publication date: April 23, 2020Inventors: Chun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
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Publication number: 20200105617Abstract: A method that includes forming first semiconductor layers and second semiconductor layers disposed over a substrate, wherein the first and second semiconductor layers have different material compositions, are alternatingly disposed, and extend over first and second regions of the substrate; patterning the first and the second semiconductor layers to form a first fin in the first region and a second fin in the second region; removing the first semiconductor layers from the first and second fins such that a first portion of the patterned second semiconductor layers becomes first suspended nanostructures in the first fin and that a second portion of the patterned second semiconductor layers becomes second suspended nanostructures in the second fin; forming third semiconductor layers on the second suspended nanostructures in the second fin; and performing an anneal process to drive materials contained in the third semiconductor layers into corresponding second suspended nanostructures in the second fin.Type: ApplicationFiled: March 27, 2019Publication date: April 2, 2020Inventors: Chih-Hao Wang, Jui-Chien Huang, Chun-Hsiung Lin, Kuo-Cheng Chiang, Chih-Chao Chou, Pei-Hsun Wang
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Patent number: 10002796Abstract: A method of forming a semiconductor device includes forming first and second fin structures on a substrate and a patterned polysilicon structure on first portions of the first and second fin structures. The method further includes depositing an insulating layer on second portions of the first and second fin structures and on the patterned polysilicon structure, which may be followed by selectively removing the insulating layer from the second portions and patterning a first hard mask layer on the second portion of the second fin structure. The method also includes growing a first epitaxial region on the second portion of the first fin structure, removing the patterned first hard mask layer from the second portion of the second fin structure, patterning a second hard mask layer on the first epitaxial region, and growing a second epitaxial region on the second portion of the second fin structure.Type: GrantFiled: March 31, 2017Date of Patent: June 19, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Huan-Chieh Su, Chih-Hao Wang, Jui-Chien Huang, Chun-Hsiung Lin
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Patent number: 9978630Abstract: An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.Type: GrantFiled: June 8, 2015Date of Patent: May 22, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: I-Ming Chang, Wen-Huei Guo, Chih-Hao Chang, Shou-Zen Chang, Clement Hsingjen Wann, Tung Ying Lee, Cheng-Long Chen, Jui-Chien Huang
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Patent number: 9786757Abstract: This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins.Type: GrantFiled: March 8, 2016Date of Patent: October 10, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Huan-Chieh Su, Jui-Chien Huang, Chun-An Lin, Chien-Hsun Wang, Chun-Hsiung Lin
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Publication number: 20160190272Abstract: This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins.Type: ApplicationFiled: March 8, 2016Publication date: June 30, 2016Inventors: HUAN-CHIEH SU, JUI-CHIEN HUANG, CHUN-AN LIN, CHIEN-HSUN WANG, CHUN-HSIUNG LIN
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Publication number: 20160126143Abstract: This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins. Accordingly, compared to conventional methods limited by fin height from the STI, the double STI recess method provides greater fin height, which is a larger process window for HGAA nanowire formation, to easily produce multi-stack HGAA nanowires with high current density. The number of layers used in the multi-stack HGAA nanowires is not limited and may vary based on different designs.Type: ApplicationFiled: November 4, 2014Publication date: May 5, 2016Inventors: HUAN-CHIEH SU, JUI-CHIEN HUANG, CHUN-AN LIN, CHIEN-HSUN WANG, CHUN-HSIUNG LIN
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Patent number: 9312186Abstract: This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins. Accordingly, compared to conventional methods limited by fin height from the STI, the double STI recess method provides greater fin height, which is a larger process window for HGAA nanowire formation, to easily produce multi-stack HGAA nanowires with high current density. The number of layers used in the multi-stack HGAA nanowires is not limited and may vary based on different designs.Type: GrantFiled: November 4, 2014Date of Patent: April 12, 2016Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Huan-Chieh Su, Jui-Chien Huang, Chun-An Lin, Chien-Hsun Wang, Chun-Hsiung Lin
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Publication number: 20150270153Abstract: An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.Type: ApplicationFiled: June 8, 2015Publication date: September 24, 2015Inventors: I-Ming Chang, Wen-Huei Guo, Chih-Hao Chang, Shou-Zen Chang, Clement Hsingjen Wann, Tung Ying Lee, Cheng-Long Chen, Jui-Chien Huang
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Patent number: 9054188Abstract: An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.Type: GrantFiled: February 24, 2012Date of Patent: June 9, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: I-Ming Chang, Wen-Huei Guo, Chih-Hao Chang, Shou-Zen Chang, Clement Hsingjen Wann, Tung Ying Lee, Cheng-Long Chen, Jui-Chien Huang