Abstract: A wafer chuck is cleaned using a cleaning cap to remove processing residue and particulate matter. The cleaning cap is configured to overlie and align with the wafer chuck and includes a base and a first roller connected to the base and having wound therearound a cleaning cloth. The cleaning cap further includes a second roller connected to the base and having attached thereto a free end of the cleaning cloth. During use, the cleaning cloth winds upon the second roller from the first roller when the second roller rotates about its axis. The cleaning cap can be positioned relative the wafer chuck by way of a manipulator to ensure the cleaning cloth contacts the wafer chuck with sufficient force. The cleaning cloth rubs the wafer chuck with both translational motion and rotational motion.

Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.

Abstract: A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide light directed to the wafer. The light detection device is configured to detect reflected light intensity from the wafer to locate at least one wafer alignment mark of wafer alignment marks separated by a plurality of angles. At least two of those angles are equal.

Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.

Abstract: The present disclosure relates to a wafer chuck configured to provide a uniform photoresist layer on a workpiece. In some embodiments, the wafer chuck comprises a plurality of vacuum holes. The plurality of vacuum holes (i.e., more than one) are in fluid communication with a cavity that continuously extends along the top surface between the vacuum holes. A vacuum source, connected to each vacuum hole, is configured to remove gas molecules from the cavity located below the workpiece leaving behind a low pressure vacuum. The use of a plurality of vacuum holes increase the uniformity of the vacuum, thereby preventing the formation of high vacuum areas in close proximity to any specific vacuum hole. The reduction of high vacuum areas reduces wafer bending associated with the high vacuum areas.

Abstract: A lithography apparatus includes at least two reticle edge masking assemblies (REMAs). The lithography apparatus further includes a light source configured to emit a light beam having a wavelength and a beam separating element configured to divide the light beam into more than one collimated light beam. Each REMA is positioned to receive one of the more than one collimating light beams and each REMA comprises a movable slit for passing the one collimated light beam therethrough. The lithography apparatus further includes at least one mask having a pattern, where the at least one mask is configured to receive light from at least one of the REMA and a projection lens configured to receive light from the at least one mask. A method of using a lithography apparatus is also discussed.

Abstract: A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide light directed to a backside of the wafer. The light detection device is configured to detect reflected light intensity from the backside of the wafer to find a position of at least one wafer alignment mark formed on the back side of the wafer.

Abstract: The present disclosure relates to a wafer chuck configured to provide a uniform photoresist layer on a workpiece. In some embodiments, the wafer chuck comprises a plurality of vacuum holes. The plurality of vacuum holes (i.e., more than one) are in fluid communication with a cavity that continuously extends along the top surface between the vacuum holes. A vacuum source, connected to each vacuum hole, is configured to remove gas molecules from the cavity located below the workpiece leaving behind a low pressure vacuum. The use of a plurality of vacuum holes increase the uniformity of the vacuum, thereby preventing the formation of high vacuum areas in close proximity to any specific vacuum hole. The reduction of high vacuum areas reduces wafer bending associated with the high vacuum areas.

Abstract: A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.

Abstract: An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.

Abstract: An apparatus includes a wafer stage configured to secure a wafer; and a cleaning module including a tank adjacent to the wafer stage, and is positioned outside the region occupied by the wafer. The cleaning module is configured to receive de-ionized (DI) water into the tank and extract the DI water out of the tank. The tank is configured to hold DI water with a top surface of the DI water substantially level with a top surface of the wafer.

Abstract: A wafer chuck is cleaned using a cleaning cap to remove processing residue and particulate matter. The cleaning cap is configured to overlie and align with the wafer chuck and includes a base and a first roller connected to the base and having wound therearound a cleaning cloth. The cleaning cap further includes a second roller connected to the base and having attached thereto a free end of the cleaning cloth. During use, the cleaning cloth winds upon the second roller from the first roller when the second roller rotates about its axis. The cleaning cap can be positioned relative the wafer chuck by way of a manipulator to ensure the cleaning cloth contacts the wafer chuck with sufficient force. The cleaning cloth rubs the wafer chuck with both translational motion and rotational motion.

Abstract: An apparatus includes a radiation source that emits a radiation beam that causes substantially all of a quantity of material to evaporate; and structure having first and second surface portions, a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion, and a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion. A different aspect involves emitting a radiation beam toward a quantity of material, the radiation beam causing substantially all of the quantity of material to evaporate; operating a structure having first and second surface portions in a first operational mode wherein a greater quantity of a byproduct of the evaporation impinges on the first surface portion; and thereafter operating the structure in a second operational mode wherein a greater quantity of the byproduct impinges on the second surface portion.

Abstract: A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.

Abstract: An apparatus for selectively heating/cooling one or more substrates and establishing an approximately uniform temperature in the one or more substrates during a heating or cooling event is described. In one embodiment, the apparatus comprises a rotatable hot/cold plate onto which the one or more substrates are placed and a heating/cooling element disposed in close proximity to the rotatable hot/cold plate for selectively elevating/lowering the temperature of the one or more substrates.