Abstract: An image sensor package comprises a substrate, a chip mounted over the substrate, A molding material is formed surrounding the chip to expose a micron lens area, wherein the molding material includes via structure passing there through. A protection layer is formed on the micro lens area to prevent the micro lens. A redistributed conductive layer is formed over the molding material to connect to a pad of the chip. Metal pads are formed on via structure as connecting points with PCB. A cover layer is formed over the substrate to isolate the metal pads.

Abstract: The present invention provides an image sensor module. The image sensor module has a die formed on a substrate, the die having a micro lens area, a lens holder formed on the substrate and over the die, a lens formed in the lens holder. A filter is formed within the lens holder and between the lens and the die, and at least one passive device formed on the substrate and covered within the lens holder. Conductive bumps or LGA (leadless grid array) are formed on the bottom surface of the substrate.

Abstract: The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.

Abstract: The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.

Abstract: The present invention provides a structure of package comprising a substrate with a die receiving cavity formed within an upper surface of the substrate and a through hole structure formed there through, wherein a terminal pad is formed under the through hole structure and the substrate includes a conductive trace formed on a lower surface of the substrate. A die is disposed within the die receiving cavity by adhesion and a dielectric layer formed on the die and the substrate. A re-distribution metal layer (RDL) is formed on the dielectric layer and coupled to the die and the through hole structure. Conductive bumps are coupled to the terminal pad.

Abstract: The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die having micro lens area disposed within the die receiving through hole; a transparent cover covers the micro lens area; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure; and a transparent base formed on the protection layer.

Abstract: The present invention provides a separating process of a semiconductor device package of wafer level package. The method comprises a step of etching a substrate to form recesses. Then a buffer layer is formed on the first surface of the substrate, wherein the buffer layer is filled with the corresponding recesses to form infillings on adjacent the semiconductor device package. Dicing the wafer into individual package along substantial center of said infillings, the step may avoid the roughness on the edge of each die and also decrease the cost of the separating process.

Abstract: The method of forming image sensor protection comprises attaching a glass on a tape and scribing the glass with lines to define cover zones on the glass, the glass is then break by a rubber puncher followed by forming glue on the edge of the cover zones. The glass is bonded on a wafer with an image sensor to align the cover zones to a micron lens area of the image sensor, and then the tape is removed from the wafer, thereby forming glass with cover zones on the image sensor.

Abstract: The present invention provides a semiconductor device package singulation method. The method comprises printing a photo epoxy layer on the back surface of a substrate of a wafer for marking the scribe lines to be diced. Then etching is performed through the substrate along the marks in the photo epoxy layer. Dicing the panel into individual package with a typical art designing knife, the step not only avoids the roughness on the edge of each die, but also decrease the cost of singulation process.

Abstract: The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in the silicon is usually metal, and metal oxide is usually formed on the pads. The metal oxide is unwanted for further process; therefore it should be removed by plasma etching process. A film is attached to the surface of the substrate exposing the area need for etching. Then a mask is attached and aligned onto the film therefore exposing the area need for etching. Then plasma dry etching is applied on the substrate for removing the metal oxide.

Abstract: A structure of package comprises a die placed on printed circuit board. A glass substrate is adhered on an adhesive film pattern to form an air gap area between the glass substrate and the chip. Micro lens are disposed on the chip. A lens holder is fixed on printed circuit board. The glass substrate can prevent the micro lens from particle contamination.

Abstract: The present invention provides a separating process of a semiconductor device package of wafer level package. The method comprises a step of etching a substrate to form recesses. Then a buffer layer is formed on the first surface of the substrate, wherein the buffer layer is filled with the corresponding recesses to form infillings on adjacent the semiconductor device package. Dicing the wafer into individual package along substantial center of said infillings, the step may avoid the roughness on the edge of each die and also decrease the cost of the separating process.

Abstract: The present invention provides a semiconductor device protective structure. The structure comprises a die with contact metal balls formed thereon electrically coupling with a print circuit board. A back surface of the die is directly adhered on a substrate and a first buffer layer is formed on the substrate. The substrate is configured over a second buffer layer such that the second buffer layer substantially encompasses the whole substrate to decrease damage to the substrate when the side of the substrate is collided with an external object.

Abstract: The present invention provides a semiconductor device package singulation method. The method comprises printing a photo epoxy layer on the back surface of a substrate of a wafer for marking the scribe lines to be diced. Then etching is performed through the substrate along the marks in the photo epoxy layer. Dicing the panel into individual package with a typical art designing knife, the step not only avoids the roughness on the edge of each die, but also decrease the cost of singulation process.

Abstract: The present invention provides a semiconductor device protective structure. The structure comprises a die with contact metal balls formed thereon electrically coupling with a print circuit board. A back surface of the die is directly adhered on a substrate and a first buffer layer is formed on the substrate. The substrate is configured over a second buffer layer such that the second buffer layer substantially encompasses the whole substrate to decrease damage to the substrate when the side of the substrate is collided with an external object.

Abstract: The present invention provides a semiconductor device protective structure. The structure comprises a die with contact metal balls formed thereon electrically coupling with a print circuit board. A back surface of the die is directly adhered on a substrate and a first buffer layer is formed on the substrate. The substrate is configured over a second buffer layer such that the second buffer layer substantially encompasses the whole substrate to decrease damage to the substrate when the side of the substrate is collided with an external object.

Abstract: A structure of package comprises a die placed on printed circuit board. A glass substrate is adhered on an adhesive film pattern to form an air gap area between the glass substrate and the chip. Micro lens are disposed on the chip. A lens holder is fixed on printed circuit board. The glass substrate can prevent the micro lens from particle contamination.

Abstract: An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.