Abstract: A five-piece optical lens for capturing image and a five-piece optical module for capturing image includes, in order from an object side to an image side, a first lens with positive refractive power having a convex object-side surface; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; and a fifth lens with negative refractive power. An image-side surface of the fifth lens can be concave, and both surfaces thereof are both aspheric, wherein at least one surface thereof has an inflection point. The first to the fifth lenses of the five-piece optical lens have refractive power. The optical lens can increase aperture value and improve the imaging quality for use in compact cameras.

Abstract: A five-piece optical lens for capturing image and a five-piece optical module for capturing image, along the optical axis in order from an object side to an image side, include a first lens with positive refractive power having a convex object-side surface; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; and a fifth lens with negative refractive power; and at least one of the image-side surface and object-side surface of each of the five lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: A five-piece optical lens for capturing image and a five-piece optical module for capturing image, along the optical axis in order from an object side to an image side, include a first lens with positive refractive power having a convex object-side surface; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; and a fifth lens with negative refractive power. An image-side surface of the fifth lens can be concave, and both surfaces thereof are both aspheric, wherein at least one surface thereof has an inflection point. The first to the fifth lenses of the five-piece optical lens have refractive power. The optical lens can increase aperture value and improve the imaging quality for use in compact cameras.

Abstract: A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.

Abstract: An embodiment of the invention provides a decorative license plate frame and its customized method and system. The decorative license plate frame is fixed on a vehicle. The decorative license plate frame comprises a rectangular body, holding a license plate, and a first window, and a second window, wherein a first graphic card is connected to the first window and a second graphic card is connected to the second window, and the first graphic card and the second graphic card are detachable. In one embodiment, the first graphic card and the second graphic card are electronic cards with a display panel thereon for showing images which are transmitted from the vehicle owner or user.

Abstract: A safety window grid assembly includes a window frame unit and a grid-forming unit. The grid-forming unit includes: a rotatable shaft supported rotatably on the window frame unit; a plurality of cords, each of which has a first connecting end secured to the rotatable shaft and each of which is extendably wound on the rotatable shaft, each of the cords being retractable and extendable between a retracted state and an extended state, the cords being helical in shape and being distributed in series along the length of the rotatable shaft when the cords are disposed at the retracted state; and a connecting mechanism for interconnecting a second connecting end of each cord of the grid structure and the window frame unit.

Abstract: The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.

Abstract: An imaging lens assembly includes first, second and third optical lenses that are arranged sequentially from an object side to an image side along an optical axis, and a constant-aperture diaphragm disposed between the second optical lens and the object side. Each of the first and second optical lenses has a positive refractive power near the optical axis. The third optical lens has a negative refractive power near the optical axis and has an object-side surface and an image-side surface, at least one of which has at least an inflection point. The imaging lens assembly satisfies: 0.55<f/Dg<0.85, in which, f is a focal length of the imaging lens assembly, and Dg is a length of a diagonal line of a maximum viewing angle in an imaging plane.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.

Abstract: A safety window grid assembly includes a hollow housing, a rotating shaft rotatably disposed in the housing, a cord and a locking mechanism. The cord is retractable and extendable relative to the rotating shaft to convert between a retracted state and an extended state. The locking mechanism is disposed on the housing, and includes an operating member rotatable relative to the housing, a driving member connected co-rotatably to the operating member, and a locking member. The locking member is movable between a locking position where a portion of the cord is clamped between the rotating shaft and the locking member such that the cord is not movable, and an unlocking position where the locking member is spaced apart from the cord such that the cord is movable.

Abstract: A semiconductor device having a metal gate includes a substrate having a first gate trench and a second gate trench formed thereon, a gate dielectric layer respectively formed in the first gate trench and the second gate trench, a first work function metal layer formed on the gate dielectric layer in the first gate trench and the second gate trench, a second work function metal layer respectively formed in the first gate trench and the second gate trench, and a filling metal layer formed on the second work function metal layer. An opening width of the second gate trench is larger than an opening width of the first gate trench. An upper area of the second work function metal layer in the first gate trench is wider than a lower area of the second work function metal layer in the first gate trench.

Abstract: A semiconductor device with oxygen-containing metal gates includes a substrate, a gate dielectric layer and a multi-layered stack structure. The multi-layered stack structure is disposed on the substrate. At least one layer of the multi-layered stack structure includes a work function metal layer. The concentration of oxygen in the side of one layer of the multi-layered stack structure closer to the gate dielectric layer is less than that in the side of one layer of the multi-layered stack structure opposite to the gate dielectric layer.

Abstract: A window stop device is adapted for limiting sliding movement of a window sash along a rail, and includes a restraining unit and a lever unit pivoting on the restraining unit between a locked position and an unlocked position. The restraining unit includes a pair of clamping members for flanking the rail. In the locked pos it ion, pressing arms of the lever unit press the clamping members, respectively, so that the clamping members clamp tightly the rail therebetween. In the unlocked position, the pressing arms are away from the clamping members so as to release the clamping members and permit sliding movement of the restraining unit along the rail.

Abstract: An imaging lens assembly includes first, second and third optical lenses that are arranged sequentially from an object side to an image side along an optical axis, and a constant-aperture diaphragm disposed between the second optical lens and the object side. Each of the first and second optical lenses has a positive refractive power near the optical axis. The third optical lens has a negative refractive power near the optical axis and has an object-side surface and an image-side surface, at least one of which has at least an inflection point. The imaging lens assembly satisfies: 0.55<f/Dg<0.85, in which, f is a focal length of the imaging lens assembly, and Dg is a length of a diagonal line of a maximum viewing angle in an imaging plane.

Abstract: A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.

Abstract: The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Abstract: A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the first recess and the second recess is formed. A material is filled in the first recess but exposing a top part of the first recess. The first metal layer in the top part of the first recess and in the second recess is simultaneously removed. The material is removed. A second metal layer and a metal gate layer in the first recess and the second recess are sequentially filled.

Abstract: A brewing device includes a supporting ring having a ring body adapted to be disposed on an inner surface of a container, and an inner magnetic member fixed in the ring body. A filter is disposed on and supported by the ring body and is movable along with the ring body. An operator includes an operator body adapted to be disposed on an outer surface of the container and is adapted to be movable relative to the container, and an outer magnetic member fixed in the operator body and magnetically engaging the inner magnetic member. The operator is operable to move the supporting ring and the filter upwardly and downwardly relative to the container.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.