Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: A synchronous hinge module includes a first axle, a second axle, a third axle, a fourth axle, at least one central frame, at least two connecting bases, a plurality of first baffle plates, at least two side frames, and a plurality of second baffle plates. The at least one central frame is disposed around the first axle and the second axle. The at least two connecting bases are engaged with two opposite ends of the at least one central frame respectively. The plurality of first baffle plates is respectively disposed around the first axle, the third axle and the second axle, the fourth axle. Each of the first baffle plates extends outside each of the at least two connecting bases and the at least one central frame.

Abstract: An SRAM device and method of forming include pass gate (PG), pull-down (PD), and pull-up (PU) transistors. A first gate line of the PG and a second gate line of the PD and the PU extend in a first direction. A common source/drain of the PG, PD, and PU transistors interposes the first and second gate lines and another source/drain of the PG transistor. A first contact extends from the common source/drain and a second contact extends from the another source/drain. A third contact is disposed above the second contact with a first width in the first direction and a first length in a second direction, first length being greater than the first width.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: An imaging optical system includes six lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one of the six lens elements is a freeform lens element, and at least one of the object-side surface and the image-side surface of the at least one freeform lens element is a freeform surface.

Abstract: The present invention provides a compound comprising EO (ethylene oxide)/PO (propylene oxide) block copolymer which can be used as an emulsifier. The present invention also provides a water-borne epoxy resin composition comprising the compound and a coating composition comprising the water-borne epoxy resin composition. The advantages of the present invention is that the epoxy resin composition or the coating composition, which the compound of the present invention is added to, enhances the compatibility between water and epoxy resin, and enhances the anticorrosive properties of the epoxy resin composition and the coating composition.

Abstract: A light-adjusting film is mounted between a color conversion layer and a display panel of a direct type backlight module and has a substrate and at least one light-adjusting layer. The substrate has a central area and a surrounding area. The at least one light-adjusting layer has a pigment and is mounted on the substrate. A content of the pigment is gradually decreased from the surrounding area to the central area. The color of the pigment of the light-adjusting film is a correction color of lights emitted from light emitting surface of the color conversion layer in the backlight module.

Abstract: A light-guide sunroof assembly comprises a plastic substrate and a light source module furnished besides the plastic substrate. An outer layer of the plastic substrate is added with dye to form a colored background. A plurality of light-guide microstructures is furnished on the plastic substrate to guide the light generated by the light source module toward an inner surface of the plastic substrate. Thereby, the light generated by the light source module is guided by the plastic substrate and then ejects out of the inner surface of plastic substrate, so as to provide a light decoration or lighting effect that enriches the visual experience. Moreover, the plastic substrate is first formed into a curved plastic plate through a hot pressing process, and then a connecting structure is formed and fixed on the plastic plate by an insert-molding injection process, in order to replace the traditional car sunroof mechanism which is assembled by glass plate bonded with metal connecting parts.

Abstract: An electrostatic discharge (ESD) protection device for a semiconductor device that includes a gate, a source including a silicide portion having a plurality of source contacts, and a drain including a silicide portion having a plurality of drain contacts, wherein the source and drain are extended away from the gate along a device axis. The ESD device includes a resist protective oxide (RPO) portion located on the semiconductor device in between the plurality of drain contacts and in between the plurality of source contacts, respectively.

Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A method of forming a semiconductor device includes providing a structure that includes a substrate, a first fin and a second fin, a first gate structure engaging the first fin, and a second gate structure engaging the second fin; depositing a dielectric layer over the first and second gate structures; etching the dielectric layer, thereby forming a first gate contact opening exposing the first gate structure and a second gate contact opening exposing the second gate structure, wherein the first gate contact opening has a first length that is larger than a second length of the second gate contact opening; and filling the first and second gate contact openings with conductive material, thereby forming a first gate contact engaging the first gate structure and a second gate contact engaging the second gate structure.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: An electrostatic discharge (ESD) protection device for a semiconductor device that includes a gate, a source including a silicide portion having a plurality of source contacts, and a drain including a silicide portion having a plurality of drain contacts, wherein the source and drain are extended away from the gate along a device axis. The ESD device includes a resist protective oxide (RPO) portion located on the semiconductor device in between the plurality of drain contacts and in between the plurality of source contacts, respectively.

Abstract: A semiconductor device includes a gate structure, a source/drain, a first via that is disposed over the gate structure and the source/drain, and a first metal line having a more elevated vertical position than the first via in a cross-sectional view. The first via is electrically coupled to both the gate structure and the source/drain. The first metal line and the first via each extends in a first direction. A first distance separates the metal line from the via in a second direction different from the first direction. The first metal line includes a protruding portion that protrudes outwardly in the second direction.

Abstract: A photographing optical lens system includes six lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has positive refractive power. The second lens element has negative refractive power. The sixth lens element has negative refractive power. At least one lens surface of at least one lens element of the photographing optical lens system has at least one critical point in an off-axis region thereof.

Abstract: In accordance with some embodiments, a fluid sample collection and retrieval apparatus including a microfluidic chip, a retrieval tube, a first switch, a second switch and a processor is provided. The microfluidic chip includes a first sample channel, a first fluid directing channel assembly, a first confluence chamber, a first collection channel, a first waste channel, and a retrieval hole. The retrieval hole passes through an outer surface of the microfluidic chip. The retrieval tube is connected to the retrieval hole. The first switch is connected to the microfluidic chip. The second switch is attached to the retrieval tube. The processor is configured to activate the first switch to operate the flow adjustment of the first fluid directing channel assembly and activate the second switch to operate a sample collection in the first collection channel within duration of operating the flow adjustment of the first fluid directing channel assembly.

Abstract: A light emitting diode (LED) package structure is provided and includes a substrate, an LED chip and a reflective component. The substrate has a first and a second region, and the substrate includes at least one electrode pad disposed on the second region. The LED chip is disposed on the substrate and has a chip upper surface with a light emitting region and a wire bonding region. The LED chip includes at least one electrode contact located at the wire bonding region and is electrically connected to the at least one electrode pad via a metal wire. The reflective component includes a first portion and a second portion. The first portion includes a first surface flush with the light emitting region and the second portion includes a second surface above a highest point of the metal wire.

Abstract: A sensing device includes a substrate, two chips, and a shielding structure. The two chips are respectively defined as an emitting chip and a receiving chip. The emitting chip can emit a sensing light beam, the receiving chip can receive the sensing light beam, and the two chips are fixed in position on the substrate at intervals. At least one of the chips is electrically connected to the substrate through at least one wire, and a position where the wire is connected to the substrate is located between the two chips. The shielding structure is formed on the substrate. The shielding structure is located between the two chips, and the shielding structure covers the wire and a portion of the chip connected to the wire. Compared with the conventional photo-plethysmography sensor, the sensing device has the advantage of a smaller size.

Abstract: A light-adjusting film is mounted between a color conversion layer and a display panel of a direct type backlight module and has a substrate and at least one light-adjusting layer. The substrate has a central area and a surrounding area. The at least one light-adjusting layer has a pigment and is mounted on the substrate. A content of the pigment is gradually decreased from the surrounding area to the central area. The color of the pigment of the light-adjusting film is a correction color of lights emitted from light emitting surface of the color conversion layer in the backlight module.