Abstract: A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.

Abstract: A crack stopping structure is disclosed. The crack stopping structure includes a semiconductor substrate having a die region, a die seal ring region, and a scribe line region; a metal interconnect structure disposed on the semiconductor substrate of the scribe line region; and a plurality of dielectric layers disposed on the semiconductor substrate of the die region, the die seal ring region, and the scribe line region. The dielectric layers include a first opening exposing the surface of the metal interconnect structure of the scribe line region and a second opening exposing the dielectric layer adjacent to the metal interconnect structure such that the metal interconnect structure and the exposed portion of the dielectric layer form a step.

Abstract: A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.

Abstract: A crack stopping structure is disclosed. The crack stopping structure includes a semiconductor substrate having a die region, a die seal ring region, and a scribe line region; a metal interconnect structure disposed on the semiconductor substrate of the scribe line region; and a plurality of dielectric layers disposed on the semiconductor substrate of the die region, the die seal ring region, and the scribe line region. The dielectric layers include a first opening exposing the surface of the metal interconnect structure of the scribe line region and a second opening exposing the dielectric layer adjacent to the metal interconnect structure such that the metal interconnect structure and the exposed portion of the dielectric layer form a step.

Abstract: A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Abstract: A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Abstract: The invention is directed to a chip comprising a substrate having a plurality of pads located thereon and a passivation layer located over the substrate, wherein the passivation layer has a plurality of openings and recesses formed therein and the openings expose the pads respectively. During the later performed packaging process, a molding compound can fill out the recesses on the passivation layer to provide a stronger mechanical adhesion between the molding compound and the passivation layer. Therefore, the peeling issue of the molding compound can be solved.

Abstract: A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Abstract: A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Abstract: A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Abstract: A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Abstract: The invention is directed to a semiconductor structure located on a substrate in a scribe line region of a wafer. The semiconductor structure comprises a first dielectric layer, a first test pad and a passivation layer. The first dielectric layer is disposed on the substrate and the first test pad is disposed on the first dielectric layer. The passivation layer is disposed on the first dielectric layer and surrounding the first test pad and a groove is located between the first test pad and the passivation layer and the groove is at lest located between the boundary of the scribe line region and the first test pad.

Abstract: A semiconductor wafer includes a plurality of active circuit die areas, each of which being bordered by a dicing line region through which the plurality of active circuit die areas are separated from each other by mechanical wafer dicing. Each of the plurality of active circuit die areas has four sides. An overcoat covers both the active circuit die areas and the dicing line region. An inter-layer dielectric layer is disposed underneath the overcoat. A reinforcement structure includes a plurality of holes formed within the dicing line region. The plurality of holes are formed by etching through the overcoat into the inter-layer dielectric layer and are disposed along the four sides of each active circuit die area. A die seal ring is disposed in between the active circuit chip area and the reinforcement structure.

Abstract: A semiconductor chip includes an active inner circuit; a die seal ring surrounding the active inner circuit; a first circuit structure fabricated at a first corner of the semiconductor chip outside the die seal ring and electrically connected to the die seal, wherein the first circuit structure has a first solder pad; and a second circuit structure fabricated at a second corner of the semiconductor chip outside the die seal ring and electrically connected to the die seal, wherein the second circuit structure has a second solder pad.

Abstract: A semiconductor structure is provided. The semiconductor structure is disposed on the scribe line of a wafer and is around the chip area of the wafer. The semiconductor structure includes a plurality of dielectric layers sequentially disposed on the scribe line and a plurality of metal patterns disposed in each dielectric layer. The metal patterns disposed in each dielectric layer extend to the next underlying dielectric layer.

Abstract: The invention is directed to a chip comprising a substrate having a plurality of pads located thereon and a passivation layer located over the substrate, wherein the passivation layer has a plurality of openings and recesses formed therein and the openings expose the pads respectively. During the later performed packaging process, a molding compound can fill out the recesses on the passivation layer to provide a stronger mechanical adhesion between the molding compound and the passivation layer. Therefore, the peeling issue of the molding compound can be solved.

Abstract: A semiconductor structure is provided. The semiconductor structure is disposed on the scribe line of a wafer and is around the chip area of the wafer. The semiconductor structure includes a plurality of dielectric layers sequentially disposed on the scribe line and a plurality of metal patterns disposed in each dielectric layer. The metal patterns disposed in each dielectric layer extend to the next underlying dielectric layer.

Abstract: A fuse structure on a peripheral region of a substrate, the fuse structure comprising a plurality of fuses disposed on a plane and parallel to each other, wherein each fuse has a melting block and the melting blocks are arranged in a staggered form. Because of the fuse structure with melting blocks disposed in a staggered arrangement, the pitch of the fuses is relatively small and the size of the semiconductor device is decreased.

Abstract: A flip-chip package includes a packaging substrate; an integrated circuit die affixed to the packaging substrate, wherein the integrated circuit die includes an active integrated circuit surrounded by a peripheral die seal ring therein; and a thermal stress releasing pad disposed in a stress-releasing area that is at a corner of the integrated circuit die outside the die seal ring, wherein the thermal stress releasing pad is connected to the packaging substrate by using a solder bump, which, in turn, is connected to a dummy heat-spreading metal plate embedded in the packaging substrate so as to form a heat shunting path for reducing thermal stress during temperature cycling test.

Abstract: A flip-chip package includes a packaging substrate; an integrated circuit die affixed to the packaging substrate, wherein the integrated circuit die includes an active integrated circuit surrounded by a peripheral die seal ring therein; and a thermal stress releasing pad disposed in a stress-releasing area that is at a corner of the integrated circuit die outside the die seal ring, wherein the thermal stress releasing pad is connected to the packaging substrate by using a solder bump, which, in turn, is connected to a dummy heat-spreading metal plate embedded in the packaging substrate so as to form a heat shunting path for reducing thermal stress during temperature cycling test.