Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallylamine salt having a cationic amine group, such as a diallylammonium halide, or a diallylalkylamine salt having a cationic amine group, such as a diallylalkylammonium salt, or mixtures of the copolymers, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallylamine salt having a cationic amine group comprises a copolymer of diallylammonium chloride and sulfur dioxide and the copolymer of the diallylalkylamine salt having a cationic amine group comprises a copolymer of diallylmonomethylammonium halide, e.g. chloride, and sulfur dioxide.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallyldimethylammonium salt, such as a diallyldimethylammonium halide, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallyldimethylammonium salt comprises a copolymer of diallyldimethylammonium chloride (DADMAC) and sulfur dioxide. The slurry compositions demonstrate good oxide selectivity in the CMP polishing of pattern wafers having nitride and silicon patterns.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallylamine salt having a cationic amine group, such as a diallylammonium halide, or a diallylalkylamine salt having a cationic amine group, such as a diallylalkylammonium salt, or mixtures of the copolymers, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallylamine salt having a cationic amine group comprises a copolymer of diallylammonium chloride and sulfur dioxide and the copolymer of the diallylalkylamine salt having a cationic amine group comprises a copolymer of diallylmonomethylammonium halide, e.g. chloride, and sulfur dioxide.

Abstract: Reaction products of heterocyclic nitrogen compounds, polyepoxide compounds and polyhalogen compounds may be used as levelers in metal electroplating baths, such as copper electroplating baths, to provide good throwing power. Such reaction products may plate metal with good surface properties and good physical reliability.

Abstract: The present invention provides aqueous CMP polishing compositions comprising a from 0.5 to 30 wt. %, based on the total weight of the composition of a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and from 0.001 to 0.5 wt. %, preferably from 10 to 500 ppm, of a cationic copolymer of a diallyldimethylammonium salt, such as a diallyldimethylammonium halide, wherein the compositions have a pH of from 1 to 4.5. Preferably, the cationic copolymer of a diallyldimethylammonium salt comprises a copolymer of diallyldimethylammonium chloride (DADMAC) and sulfur dioxide. The slurry compositions demonstrate good oxide selectivity in the CMP polishing of pattern wafers having nitride and silicon patterns.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The present invention provides methods for chemical mechanical polishing (CMP polishing) spin coated organic polymer films on a semiconductor wafer or substrate as part of lithography or as part of electronic packaging. The methods comprising spin coating an organic polymer liquid on a semiconductor wafer or substrate; at least partially curing the spin coating to form an organic polymer film; and, CMP polishing the organic polymer film with a polishing pad and an aqueous CMP polishing composition having a pH ranging from 1.5 to 4.5 and comprising elongated, bent or nodular silica particles containing one or more cationic nitrogen or phosphorus atoms, from 0.005 to 0.5 wt. %, based on total CMP polishing composition solids, of a sulfate group containing C8 to C18 alkyl or alkenyl group surfactant, and a pH adjusting agent.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of imidazole compounds, bisepoxides and halobenzyl compounds to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: Reaction products of halogenated pyrimidines and nucleophilic linker units are included in metal electroplating baths to provide good throwing power. The electroplating baths can be used to plate metal, such as copper, tin and alloys thereof on printed circuit boards and semiconductors and fill through-holes and vias.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: Pyrimidine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: Pyrimidine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of imidazole compounds, bisepoxides and halobenzyl compounds to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.