Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip.

Abstract: Various embodiments may relate to a lighting device including a plurality of semiconductor light sources of different colors, downstream of which a common diffuser is disposed. The lighting device has at least one light sensor optically coupled to the diffuser.

Abstract: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

Abstract: A light emitting device including a light emitting diode having a semiconductor body that generates electromagnetic radiation; a converter element downstream of the first light emitting diode which converts at least part of the electromagnetic radiation into first color light; a second light emitting diode having a semiconductor body that generates light of the first color; a radiation exit area from which the first color light emerges; and a drive circuit operating the second light emitting diode, wherein the converter element contains at least one luminescence conversion material that emits the first color light, as the operating duration of the first light emitting diode increases, intensity of the first color light emitted by the converter element decreases, the drive circuit controls the second light emitting diode dependent on at least one of measurement values: intensity of the first color light emitted by the converter element, temperature of the converter element, operating duration of the first ligh

Abstract: A planar light guide includes a main body with a back face and a radiation outcoupling face opposite thereto, a main direction of light guidance parallel to the radiation outcoupling face, at least one plurality of identically shaped and identically oriented outcoupling structures formed on at least one of the main faces, and at least one structure main face per outcoupling structure, wherein an angle-dependent emission characteristic is provided asymmetrically in a first plane parallel to the main direction of light guidance and perpendicular to the radiation outcoupling face.

Abstract: An illumination device with an exit surface for pump light propagation with a main propagation direction and a phosphor element for converting the pump light into converted light is disclosed. Further, an optical system with a reflection surface is provided for deflecting the pump light, where the reflection surface reflects the pump light with a directional component opposite to the main propagation direction and onto the phosphor element.

Abstract: In at least one embodiment of the luminaire (1), it includes at least one optoelectronic semiconductor device (4) and at least one primary optical unit (11) which is disposed downstream of the semiconductor device (4) and is spaced apart therefrom. Furthermore, the luminaire (1) comprises a secondary optical unit (22) and/or a tertiary optical unit (33) which is/are disposed downstream of the primary optical unit (11). A proportion of at least 30% of radiation emitted by the semiconductor device (4) passes to the secondary optical unit (22) and/or to the tertiary optical unit (33). Furthermore, the secondary optical unit (22) and/or the tertiary optical unit (33) is/are arranged for small-angle scattering of the radiation emitted by the semiconductor device (4).

Abstract: An optical component comprises a carrier plate (1) having a first main surface (2) and a second main surface (3) facing away from the first main surface (2), and a first lens structure (4) on the first main surface (2), wherein the first lens structure (4) has at least a first lens element (41) having a first polygonal form and a second lens element (42) having a second polygonal form, the first lens structure (4) completely covers the first main surface (2), and the first lens element (41) and the second lens element (42) are non-congruent with respect to one another and/or differ in terms of their orientation on the first main surface (2) of the carrier plate (1).

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip.

Abstract: A lighting device (1) comprises at least one element (2) emitting light which is at least in part visible, and at least one conversion medium (3), which converts at least part of the radiation emitted by the element (2) into radiation of another frequency. In addition, the lighting device (1) comprises at least one filter medium (4) which filters at least part of the radiation, and which is configured such that the quantity of the conversion medium (4) to be used is reduced for at least one predetermined color saturation and/or one predetermined hue. This means that, compared with a light source corresponding to the lighting device (1) apart from the filter medium (4), savings are made in conversion medium (3) while achieving the same color saturation or the same hue. Light of a predetermined color saturation or of a predetermined hue may be efficiently generated by such a lighting device (1) and the lighting device (1) may be inexpensively produced.

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure which includes a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon a projection of the contact structure into the plane of the optical structure.

Abstract: An optoelectronic component has optically active region, with the optically active region comprising at least one semiconductor chip which is provided for generating electromagnetic radiation, and comprising a beam-forming element through which at least a portion of the electromagnetic radiation which is emitted from the semiconductor chip in operation passes and which has an optical axis, and with the optically active region having quadrant symmetry with respect to a coordinate system which is perpendicular to the optical axis. An illumination device has an optoelectronic component such as this.

Abstract: Device for generating polarized electromagnetic radiation has a diffuser and a polarizer. The diffuser is arranged in a beam path of the electromagnetic radiation. The polarizer is arranged in the beam path of the electromagnetic radiation, to be precise downstream of the diffuser in the direction of propagation of the electromagnetic radiation. The polarizer has a reflective side facing the diffuser, said reflective side being at least partly reflective to the electromagnetic radiation. The polarizer transmits electromagnetic radiation having a predefined polarization and reflects electromagnetic radiation not having the predefined polarization back to the diffuser. The diffuser scatters, in a non-polarization-maintaining manner, at least one portion of the reflected-back electromagnetic radiation not having the predefined polarization.

Abstract: An illumination device with an exit surface for pump light propagation with a main propagation direction and a phosphor element for converting the pump light into converted light is disclosed. Further, an optical system with a reflection surface is provided for deflecting the pump light, where the reflection surface reflects the pump light with a directional component opposite to the main propagation direction and onto the phosphor element.

Abstract: A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Abstract: An LED light source includes a primary light source, in particular at least one blue- or UV-emitting semiconductor chip, the radiation of which is converted partly or completely into longer-wave radiation by a conversion element fitted at a distance, said conversion element being disposed as a dome ahead of the primary light source, wherein the dome is a section of an oblate body having an equator and a pole, wherein the pole points in the direction of the optical axis, wherein the oblate body is flattened in the direction toward the pole relative to the direction toward the equator, and wherein the oblate body is equipped with a converting phosphor layer.

Abstract: A method for the binning of a radiation-emitting, optoelectronic semiconductor component (20) is specified, comprising the following steps: providing a radiation-emitting, optoelectronic semiconductor component (20), determining the color locus (8) of the light emitted by the radiation-emitting, optoelectronic semiconductor component (20) during operation, classifying the radiation-emitting, optoelectronic semiconductor component (20) into a predefined color locus range (6) comprising the color locus determined.

Abstract: This invention relates to a method of designing an illumination device, wherein a light source unit is modeled with a set of rays. Therein, each ray is assigned a light power and is further characterized by a light volume, which specifies how “spread out” the light is in area and angle. In this way, a selection of rays with respect to their “density” becomes possible, and an optical system can be optimized for a transmission of those rays providing the most light per volume.

Abstract: A display assembly comprising a backlight unit having at least two optical waveguide elements lying alongside one another, and configured such that light is emitted with a greater brightness in a boundary region of the optical waveguide elements than outside the boundary regions, a display unit arranged such that during operation of the display assembly light emitted by the backlight unit impinges on a rear side of the display unit, a diffuser layer arranged between the backlight unit and the display unit, and a control unit that compensates for a greater brightness in the boundary regions by adapted driving of the display unit.

Abstract: According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.