Abstract: A planar light guide includes a main body with a back face and a radiation outcoupling face opposite thereto, a main direction of light guidance parallel to the radiation outcoupling face, at least one plurality of identically shaped and identically oriented outcoupling structures formed on at least one of the main faces, and at least one structure main face per outcoupling structure, wherein an angle-dependent emission characteristic is provided asymmetrically in a first plane parallel to the main direction of light guidance and perpendicular to the radiation outcoupling face.

Abstract: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

Abstract: In at least one embodiment of the surface light guide, the surface light guide includes at least one scattering element for scattering light. A decoupling coefficient is caused by the scattering element. The decoupling coefficient is set in a varying fashion along a main light-guiding direction. In a direction perpendicular to the main sides of the surface light guide, the opacity value is no more than 0.10, the transmission coefficient is at least 0.75 and the quotient of the minimum light density and maximum light density seen over a continuous emitting area of at least one of the main sides is at least 0.75.

Abstract: The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Abstract: An LED module includes a carrier and a number of light sources. Each light source is arranged on the carrier in such a way that the LED module comprises a radiation uniformity which is less than the statistical mean of a radiation uniformity distribution, wherein the radiation uniformity distribution is based on a plurality of LED modules with a random arrangement of the light sources.

Abstract: A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

Abstract: In at least one embodiment of the luminaire (1), it includes at least one optoelectronic semiconductor device (4) and at least one primary optical unit (11) which is disposed downstream of the semiconductor device (4) and is spaced apart therefrom. Furthermore, the luminaire (1) comprises a secondary optical unit (22) and/or a tertiary optical unit (33) which is/are disposed downstream of the primary optical unit (11). A proportion of at least 30% of radiation emitted by the semiconductor device (4) passes to the secondary optical unit (22) and/or to the tertiary optical unit (33). Furthermore, the secondary optical unit (22) and/or the tertiary optical unit (33) is/are arranged for small-angle scattering of the radiation emitted by the semiconductor device (4).

Abstract: A light emitting device including a light emitting diode having a semiconductor body that generates electromagnetic radiation; a converter element downstream of the first light emitting diode which converts at least part of the electromagnetic radiation into first color light; a second light emitting diode having a semiconductor body that generates light of the first color; a radiation exit area from which the first color light emerges; and a drive circuit operating the second light emitting diode, wherein the converter element contains at least one luminescence conversion material that emits the first color light, as the operating duration of the first light emitting diode increases, intensity of the first color light emitted by the converter element decreases, the drive circuit controls the second light emitting diode dependent on at least one of measurement values: intensity of the first color light emitted by the converter element, temperature of the converter element, operating duration of the first ligh

Abstract: An optoelectronic component has optically active region, with the optically active region comprising at least one semiconductor chip which is provided for generating electromagnetic radiation, and comprising a beam-forming element through which at least a portion of the electromagnetic radiation which is emitted from the semiconductor chip in operation passes and which has an optical axis, and with the optically active region having quadrant symmetry with respect to a coordinate system which is perpendicular to the optical axis. An illumination device has an optoelectronic component such as this.

Abstract: Described is an optical waveguide having a main direction of extension, at least one radiation entrance face, and a radiation exit face that extends longitudinally to the main direction of extension, wherein at least one radiation entrance face extends transversely to the main direction of extension, and the at least one radiation entrance face has two convexly curved subregions that are connected to each other by a kink-like or concavely shaped indentation. An optical device formed with such a waveguide is also described, as is a display device.

Abstract: An optoelectronic component has optically active region, with the optically active region comprising at least one semiconductor chip which is provided for generating electromagnetic radiation, and comprising a beam-forming element through which at least a portion of the electromagnetic radiation which is emitted from the semiconductor chip in operation passes and which has an optical axis, and with the optically active region having quadrant symmetry with respect to a coordinate system which is perpendicular to the optical axis. An illumination device has an optoelectronic component such as this.

Abstract: An optoelectronic component with a desired color impression in the switched-off state includes, in particular, a semiconductor layer sequence with an active region, that during operation radiates electromagnetic radiation with a first spectrum, and a wavelength conversion layer that is disposed downstream from the semiconductor layer sequence in the beam path of the electromagnetic radiation with the first spectrum, and that at least partially converts a subspectrum of the electromagnetic radiation with the first spectrum into electromagnetic radiation with a second spectrum, and a filter layer that reflects at least a part of the radiation incident from outside onto the optoelectronic component.

Abstract: A lighting device includes a light source including at least two light-emitting diode chips which emit light of mutually differing colors when in operation, and an optical element in the form of a solid body made from a dielectric material including a radiation entrance face facing towards the light-emitting diode chips, a radiation exit face remote from the light-emitting diode chips, and a circumferential face connecting the radiation entrance face and the radiation exit face to one another, wherein the circumferential face is reflective to the light emitted by the light-emitting diode chips when in operation, and the radiation entrance face and/or the radiation exit face is/are non-planar at least in places, wherein a gap, which is filled with a gas, is arranged between at least one of the light-emitting diode chips of the light source and the radiation entrance face, and the optical element is a sole optical element of the lighting device, which optical element is arranged downstream of all light-emitting

Abstract: A method for producing a plurality of LED illumination devices which each emit light having an average value of a first photometric parameter including producing a plurality of LED chips which emit light of the same color; measuring values of the first photometric parameter of the LED chips; combining the LED chips to form groups of at least two LED chips which have different values of the first photometric parameter such that differences in the average values of all the LED illumination devices are imperceptible to the human eye; and equipping a respective LED illumination device with a group of LED chips.

Abstract: According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.

Abstract: A method for the binning of a radiation-emitting, optoelectronic semiconductor component (20) is specified, comprising the following steps: providing a radiation-emitting, optoelectronic semiconductor component (20), determining the color locus (8) of the light emitted by the radiation-emitting, optoelectronic semiconductor component (20) during operation, classifying the radiation-emitting, optoelectronic semiconductor component (20) into a predefined color locus range (6) comprising the color locus determined.

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure which includes a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon a projection of the contact structure into the plane of the optical structure.

Abstract: A light-emitting semi-conductor diode comprising a light emitting chip at least partially surrounded by a transparent electronics protecting body on which a composite layer foil is disposed, the composite layer foil includes at its side facing away from the electronics protection body a carrier layer, which has a refraction index that is greater than the refraction index of the electronics protection body and, at the opposite side, an active layer of the same material of which the electronics protecting body consists.

Abstract: A lighting device (1) comprises at least one element (2) emitting light which is at least in part visible, and at least one conversion medium (3), which converts at least part of the radiation emitted by the element (2) into radiation of another frequency. In addition, the lighting device (1) comprises at least one filter medium (4) which filters at least part of the radiation, and which is configured such that the quantity of the conversion medium (4) to be used is reduced for at least one predetermined colour saturation and/or one predetermined hue. This means that, compared with a light source corresponding to the lighting device (1) apart from the filter medium (4), savings are made in conversion medium (3) while achieving the same colour saturation or the same hue. Light of a predetermined colour saturation or of a predetermined hue may be efficiently generated by such a lighting device (1) and the lighting device (1) may be inexpensively produced.

Abstract: A display assembly comprising a backlight unit having at least two optical waveguide elements lying alongside one another, and configured such that light is emitted with a greater brightness in a boundary region of the optical waveguide elements than outside the boundary regions, a display unit arranged such that during operation of the display assembly light emitted by the backlight unit impinges on a rear side of the display unit, a diffuser layer arranged between the backlight unit and the display unit, and a control unit that compensates for a greater brightness in the boundary regions by adapted driving of the display unit.