Patents by Inventor Jun-Bo Yoon

Jun-Bo Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6518165
    Abstract: A method for manufacturing a semiconductor device where a passive element, such as, an inductor, is floating over a substrate, where an integrated circuit is formed, such that the overall area of the semiconductor device may be highly reduced. According to the present invention, a first metal layer is formed on the substrate, a first masking layer is formed on a portion of the first metal layer, a second metal layer is formed on other portion of the first metal layer on which the first masking layer is not formed, and a second masking layer is formed on the first masking layer and the second metal layer. Then, the first masking layer and a portion of the second masking layer which includes a portion which covers the first masking layer is removed, a third metal layer is formed on portions of the first and second metal layers which are exposed by the step of removing the first masking layer and the portion of the second masking layer.
    Type: Grant
    Filed: February 22, 2001
    Date of Patent: February 11, 2003
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jun Bo Yoon, Chul Hi Han, Eui Sik Yoon, Choong Ki Kim
  • Patent number: 6517483
    Abstract: Disclosed are a remote pressure-monitoring device and a preparing method thereof. The device comprises a metal electrode on a glass substrate, a capacitive sensor made of a silicon diaphragm, and an electroplated inductor electrically connected, in parallel, with the sensor. The glass substrate and the silicon are electrically bonded to form an LC resonator. For the fabrication of the device, first, a metal electrode which plays a role as a lower electrode for a capacitive pressure sensor is deposited on the glass substrate with the same coefficient of thermal expansion as that of silicon. An inductor is formed at a thickness by copper electroplating, surrounding the metal electrode at a predetermined distance. A silicon substrate is anisotropically etched to form a space for enveloping the metal electrode at a central area and to form a groove around the space.
    Type: Grant
    Filed: January 4, 2001
    Date of Patent: February 11, 2003
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Eun-Chul Park, Jun-Bo Yoon, Euisik Yoon
  • Publication number: 20030015936
    Abstract: Disclosed is an electrostatic actuator. A multi-layered auxiliary electrode is further arranged between main electrode and actuating body, and positive charge or negative charge is applied to main electrode, respective auxiliary electrodes, and actuating body such that electrostatic attractive force is generated between auxiliary electrodes adjacent to the main electrode, between adjacent auxiliary electrodes, and between auxiliary electrodes adjacent to the actuating body. According to the invention, distance between the induced charges is shortened, so that electrostatic attractive force therebetween increases, thereby capable of maintaining an actuating range equal to or larger than the conventional electrostatic actuator. The electrostatic actuator according to the present invention can be applied to various MEMS devices, such as an optical switch in which a mirror is formed in the actuator, a radio frequency (RF) switch, or a variable electrostatic capacitor, or the like.
    Type: Application
    Filed: July 15, 2002
    Publication date: January 23, 2003
    Applicant: Korea Advanced Institute of Science And Technology
    Inventors: Euisik Yoon, Jun-Bo Yoon, Hyung-Kew Lee
  • Patent number: 6490147
    Abstract: A high-Q micromechanical device such as a capacitor and method of tuning same by electrostatically moving the capacitor's dielectric are provided. The high-Q, tunable, micromechanical capacitor is realized using an IC-compatible, electroplated-metal, surface-micromachining technology and demonstrates quality (Q−) factors in excess of 290—the highest reported to date for on-chip tunable capacitors at frequencies near 1 GHz. When combined with on-chip (or off-chip) high-Q inductors, these tunable capacitors are expected to be useful for not only low-phase noise integrated VCO applications, but also for tunable, low-loss, RF filters and tunable matching networks, both key functions capable of enhancing the multi-band programmability of wireless communication handsets.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: December 3, 2002
    Assignee: The Regents of the University of Michigan
    Inventors: Jun-Bo Yoon, Clark T.-C. Nguyen
  • Publication number: 20020125030
    Abstract: A high-Q micromechanical device such as a capacitor and method of tuning same by electrostatically moving the capacitor's dielectric are provided. The high-Q, tunable, micromechanical capacitor is realized using an IC-compatible, electroplated-metal, surface-micromachining technology and demonstrates quality (Q−) factors in excess of 290—the highest reported to date for on-chip tunable capacitors at frequencies near 1 GHz. When combined with on-chip (or off-chip) high-Q inductors, these tunable capacitors are expected to be useful for not only low-phase noise integrated VCO applications, but also for tunable, low-loss, RF filters and tunable matching networks, both key functions capable of enhancing the multi-band programmability of wireless communication handsets.
    Type: Application
    Filed: June 11, 2001
    Publication date: September 12, 2002
    Inventors: Jun-Bo Yoon, Clark T.-C. Nguyen
  • Patent number: 6423241
    Abstract: Disclosed is an ink jet print head and a method of producing the same, the ink jet print head including a plurality of ink ejecting orifices which are formed with a desired shape and a uniform size by only once using metal plating technique, having an excellent productivity and a low manufacturing cost. According to a first embodiment of the present invention, in the steps for forming an improved metal barrier layer, which is comprised of the conventional barrier layer and the conventional nozzle plate combined together, the metal barrier layer can be formed on a wetting layer by using electrolytic plating or electroless plating of Ni. As a result, an upper surface of a first photoresist mold is completely covered with the overflowing Ni. Further, an upper portion of a second photoresist mold is partially covered with the overplating Ni and is partially opened at a proper size and a desired shape. Thereby, an ink ejecting orifice is created at the upper portion of the second photoresist mold.
    Type: Grant
    Filed: December 11, 1998
    Date of Patent: July 23, 2002
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jun Bo Yoon, Jae Duk Lee, Chul Hi Han, Choong Ki Kim, Doo Won Seo
  • Patent number: 6287256
    Abstract: Disclosed are a remote pressure-monitoring device and a preparing method thereof. The device comprises a metal electrode on a glass substrate, a capacitive sensor made of a silicon diaphragm, and an electroplated inductor electrically connected, in parallel, with the sensor. The glass substrate and the silicon are electrically bonded to form an LC resonator. For the fabrication of the device, first, a metal electrode which plays a role as a lower electrode for a capacitive pressure sensor is deposited on the glass substrate with the same coefficient of thermal expansion as that of silicon. An inductor is formed at a thickness by copper electroplating, surrounding the metal electrode at a predetermined distance. A silicon substrate is anisotropically etched to form a space for enveloping the metal electrode at a central area and to form a groove around the space.
    Type: Grant
    Filed: August 25, 1999
    Date of Patent: September 11, 2001
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Eun-Chul Park, Jun-Bo Yoon, Euisik Yoon
  • Publication number: 20010001311
    Abstract: Disclosed are a remote pressure-monitoring device and a preparing method thereof. The device comprises a metal electrode on a glass substrate, a capacitive sensor made of a silicon diaphragm, and an electroplated inductor electrically connected, in parallel, with the sensor. The glass substrate and the silicon are electrically bonded to form an LC resonator. For the fabrication of the device, first, a metal electrode which plays a role as a lower electrode for a capacitive pressure sensor is deposited on the glass substrate with the same coefficient of thermal expansion as that of silicon. An inductor is formed at a thickness by copper electroplating, surrounding the metal electrode at a predetermined distance. A silicon substrate is anisotropically etched to form a space for enveloping the metal electrode at a central area and to form a groove around the space.
    Type: Application
    Filed: January 4, 2001
    Publication date: May 17, 2001
    Inventors: Eun-Chul Park, Jun-Bo Yoon, Euisik Yoon
  • Patent number: 5877791
    Abstract: A heat generating type ink-jet print head including an ink supply passage for receiving an ink from an ink container, a micro chamber for storing the ink and nozzles, all being directly formed on a substrate, and a method for fabricating the ink-jet print head using an electrolytic polishing process, and a method for fabricating the ink-jet print head. The ink-jet print head is fabricated using an electrolytic polishing process, thereby achieving an accurate and inexpensive fabrication.
    Type: Grant
    Filed: December 11, 1996
    Date of Patent: March 2, 1999
    Inventors: Ho Jun Lee, Hi Deok Lee, Jae Duk Lee, Jun Bo Yoon, Ki Ho Han, Jae Kwan Kim, Chul Hi Han, Choong Ki Kim, Doo Won Seo
  • Patent number: 5733433
    Abstract: A heat generating type ink-jet print head including an ink supply passage for receiving an ink from an ink container, a micro chamber for storing the ink and nozzles, all being directly formed on a substrate, and a method for fabricating the ink-jet print head using an electrolytic polishing process, and a method for fabricating the ink-jet print head. The ink-jet print head is fabricated using an electrolytic polishing process, thereby achieving an accurate and inexpensive fabrication.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: March 31, 1998
    Inventors: Ho Jun Lee, Hi Deok Lee, Jae Duk Lee, Jun Bo Yoon, Ki Ho Han, Jae Kwan Kim, Chul Hi Han, Choong Ki Kim, Doo Won Seo