Abstract: A method of manufacturing a pattern includes forming a pattern material layer on a substrate, forming a protective layer on the pattern material layer, forming a resist layer on the protective layer, selectively exposing the resist layer to light, and developing the selectively exposed resist layer.

Abstract: A display apparatus includes a first substrate, a second substrate disposed on the first substrate, and a controllable layer disposed between the first and second substrates. The first substrate includes a pixel. The pixel includes a display region and a non-display region. The first substrate further includes: a transistor disposed in the non-display region; a protection layer disposed on and covering the transistor; a first electrode disposed on the protection layer; and a second electrode disposed on the first electrode, the second electrode being insulated from the first electrode and including a slit disposed in the display region. One of the first electrode and the second electrode is electrically connected to the transistor via a contact hole extending through the protection layer. The other of the first electrode and the second electrode is configured to receive a common voltage. The contact hole and the slit do not overlap one another.

Abstract: An assembling structure includes a base, an assembling body and a fastening element. The base has a ring groove. The assembling body includes at least two first fastening portions. The fastening element is disposed inside the ring groove and can be rotatably installed on the base. The fastening element includes at least two second fastening portions. The fastening element can rotate relative to the base and has a fastening position and a releasing position. When the fastening element is at the fastening position, the two first fastening portions are fastened with the two second fastening portions respectively. When the fastening element is at the releasing position, the two first fastening portions are detached from the two second fastening portions respectively.

Abstract: A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member.

Abstract: A display panel includes: a substrate including red, green, blue and white sub-pixel areas; red, green and blue color filter layers respectively in the red, green and blue sub-pixel areas; and a dummy color filter layer in the white sub-pixel area. The dummy color filter layer is adjacent to at least one of the red color filter layer, the green color filter layer, and the blue color filter layer, and the dummy color filter layer forms a step with the adjacent color filter layer.

Abstract: Disclosed is a haptic module using a piezoelectric element. The haptic module comprises a base, a vibration member which is mounted on the upper portion of the base so as to be vertically movable, a piezoelectric element which couples to the vibration member, a power portion for applying power to the piezoelectric element, and a panel member which is mounted to the upper portion of the vibration member.

Abstract: The present invention relates to a driving body and a driving device having a piezoelectric element mounted thereon, and more particularly, to a driving body and a driving device having a piezoelectric element mounted thereon for transferring a lens by actuating a lens holder in a vertical direction using the piezoelectric element.

Abstract: An electronic device and a joint are provided. The electronic device includes a casing, an electronic element and the joint. The casing has a cable hole. The electronic element is disposed inside the casing. The joint includes a body, a waterproof and breathable film and a fastener. The body is fixed to the cable hole and has a breathable channel. The waterproof and breathable film is disposed at the breathable channel. The fastener is used for fastening a power cable to the body. The power cable passes through the fastener and the body and electrically connects the electronic element. The joint, a power cable and the casing form a waterproof and breathable chamber.

Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.

Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.

Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.

Abstract: Provided is a method of correcting a defect in an extreme ultraviolet (EUV) mask. A monomolecular film is chemically bonded onto a surface of a repair tip. The repair tip is positioned over a defect disposed on the EUV mask, so that the monomolecular film bonded onto the repair tip can also bond to the defect. The repair tip is then moved away from the EUV mask so that the defect is separated from the EUV mask and thus removing the defect in the EUV mask.

Abstract: A method for fabricating a photomask using a self-assembled molecule layer, comprising: forming, on a transparent substrate, a stacked structure of a phase shift pattern and a light shielding pattern over the phase shift pattern, the stacked structure exposing a portion of a surface of the transparent substrate; exposing the phase shift pattern and a portion of the surface of the transparent substrate by removing a portion of the light shielding pattern; forming a self-assembled molecule layer allowing movement of electrons on the exposed surface of the transparent substrate; measuring a critical dimension of the phase shift pattern formed with the self-assembled molecule layer; neutralizing electrons applied during the measurement of the critical dimension with the self-assembled molecule layer allowing movement of electrons; and removing the self-assembled molecule layer.

Abstract: Provided is a method of correcting a defect in an extreme ultraviolet (EUV) mask. A monomolecular film is chemically bonded onto a surface of a repair tip. The repair tip is positioned over a defect disposed on the EUV mask, so that the monomolecular film bonded onto the repair tip can also bond to the defect. The repair tip then moved away from the EUV mask so that the defect is separated from the EUV mask and thus removing the defect in the EUV mask.

Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.

Abstract: A method for fabricating a photomask using a self-assembled molecule layer, comprising: forming, on a transparent substrate, a stacked structure of a phase shift pattern and a light shielding pattern over the phase shift pattern, the stacked structure exposing a portion of a surface of the transparent substrate; exposing the phase shift pattern and a portion of the surface of the transparent substrate by removing a portion of the light shielding pattern; forming a self-assembled molecule layer allowing movement of electrons on the exposed surface of the transparent substrate; measuring a critical dimension of the phase shift pattern formed with the self-assembled molecule layer; neutralizing electrons applied during the measurement of the critical dimension with the self-assembled molecule layer allowing movement of electrons; and removing the self-assembled molecule layer.

Abstract: The distribution of cell karyotypes within a population of cells can determine the phenotype and ability of stem cells to differentiate into desired cell types, to function normally, as well as represent risk for adverse events like cancer. Therefore, determination of the aneuploid mosaic status of a cell population is useful in identifying and/or maintaining desirable traits and eliminating undesirable traits in stem cells, and for defining them at the level of their chromosomal complement.

Abstract: Provided is a method of removing particles on a photomask. The method includes fabricating a photomask formed with a thin film pattern over a transparent substrate; identifying positions of particles on the photomask by inspecting the photomask; and removing the particles using a nanotweezer.

Abstract: A blank mask includes a pattern target layer formed over a transparent substrate and a self-assembly monolayer disposed over and modifying the surface of a back side of the transparent substrate opposite to the pattern target layer.

Abstract: Provided is a method of changing an output current value of an off-chip driver by means of a counting circuit including pluralities of fuses for controlling the off-chip driver, that includes measuring the output current value of the off-chip driver after completing a wafer test; cutting the fuses of the counting circuit off when the measured output current value is smaller than a target value, increasing the initial value of a off-chip driving control signal; and fabricating a package when the measured output current value is equal to a target value.