Abstract: A semiconductor device includes a substrate, a plurality of first electrode structures, a second electrode structure, and a first dielectric layer. The substrate has a capacitor region. The first electrode structures are disposed on a surface of the substrate in the capacitor region and arranged at intervals in a first direction. The second electrode structure is disposed on side surfaces and a top surface of each of the first electrode structures. The first dielectric layer is disposed between the second electrode structure and each of the first electrode structures.

Abstract: The present invention discloses a low signal-to-noise ratio (SNR) seismic event detection model based on a deep residual shrinkage network (DRSN). Considering the different noises contained in seismic records acquired by different seismic sensors, a DRSN based on a residual network was constructed to detect seismic events from low SNR seismic records. In the constructed network, a soft thresholding function (a shrinkage function) was inserted into the deep network structure as a nonlinear transform layer to effectively filter the impact of noise-related features, and an attention mechanism, together with an adaptive soft thresholding block, was also incorporated to automatically obtain the optimal denoising threshold for seismic signals, which ensures different signals are processed to the best effect. After training, the DRSN adaptively determines the denoising threshold so that each seismic signal has its own threshold set and seismic events can be accurately detected under strong background noise.

Abstract: The present invention provides a semiconductor device and a method of fabricating the same, which includes: providing a semiconductor substrate having a first patterned region and a second patterned region and performing floating-gate poly-Si deposition on the semiconductor substrate thereby forming a first poly-Si layer, wherein the first patterned region has a higher feature density than the second patterned region; performing ion implantation on the first poly-Si layer and forming an oxide layer over a top surface of the first poly-Si layer; with the oxide layer in the second patterned region being protected, etching the oxide layer in the first patterned region; performing a CMP process on the first poly-Si layer in the first patterned region and on the oxide layer and the first poly-Si layer in the second patterned region; and forming the semiconductor device on the basis of the first poly-Si layer that has undergone the CMP process.

Abstract: In accordance with an embodiment, a drive apparatus includes a substrate, a first movable structure, a second movable structure, a first fastening structure, a second fastening structure, a first connecting piece, a second connecting piece, and a drive structure. The first fastening structure is fastened to the substrate, and the first movable structure is connected to the first fastening structure by using the first connecting piece. The second movable structure is connected to the second fastening structure by using the second connecting piece, and the second movable structure is fastened to the first movable structure. A thickness of a first area on the first fastening structure is less than a thickness of a second area. A thickness of a third area on the second fastening structure is less than a thickness of a fourth area.

Abstract: The present invention relates to a pharmaceutically acceptable salt and a crystal form of a tetrahydronaphthalene derivative, and a preparation method. Specifically, the present disclosure provides a pharmaceutically acceptable salt and a crystal form of (S)-3-(5-(4-((1-(4-((1R,2R)-6-hydroxy-2-isobutyl-1,2,3,4-tetrahydronaphthalen-1-yl)phenyl)piperidin-4-yl)methyl)piperazin-1-yl)-1-oxoisoindolin-2-yl)piperidine- 2,6-dione, and a preparation method therefor. The corresponding salt has good stability and can be better used for clinical treatment.

Abstract: Provided in the embodiments of the present disclosure are a method and device for processing a data packet, a storage medium, and an electronic device. The method includes: in a case where a Bit-Forwarding Ingress Router (BFIR) performs Bit Index Explicit Replication (BIER) packet encapsulation and outer Internet Protocol Version 6 (IPv6) packet encapsulation on a data packet, copying an Entropy field in a BIER packet header to a position of a Flow Label field of an outer IPv6 packet, and placing a label value allocated for Virtual Private Network (VPN) data in a position of the original Entropy field in the BIER packet header; and setting a data packet after the BIER packet header, and setting a Proto field in the BIER packet header to a corresponding value indicating a data packet type of the data packet.

Abstract: A method for predicting clay mineral development in lacustrine shale based on artificial intelligence is disclosed. The method comprises acquiring logging data of lacustrine shale, collecting rock samples of lacustrine shale, performing data preprocessing on the collected logging data, and acquiring types and contents of clay minerals in shale development a prediction model of clay mineral development is then developed based on an artificial intelligence. The artificial intelligence-based prediction model of clay mineral development is then optimized; and clay mineral development in lacustrine shale is predicted. In the present disclosure, the accuracy and efficiency of existing prediction methods are improved, allowing for the rapid acquisition of valuable information for the exploration and development of lacustrine shale.

Abstract: The methods and compositions disclosed herein relate to the field of cell therapy, and more specifically, to improving CAR and/or TCR function through improvement of the tumor microenvironment via improvement in cytokine signaling. Methods of treating a cancer in a patient are disclosed comprising administering to the patient immune cells expressing a chimeric antigen receptor or T-cell receptor and a membrane bound IL-18. Further disclosed are nucleic acids which encode a membrane bound IL-18 and methods for culturing cells expressing such nucleic acids.

Abstract: Embodiments of the present disclosure provide a method and apparatus for processing a message header, a storage medium, and an electronic apparatus.

Abstract: Provided is a display substrate, including: a base substrate; a gate driving circuit; first signal lines in a side region, a first corner region and a second corner region. The first signal lines include an initiation signal line and an initiation signal lead on a side of the initiation signal line close to the gate driving circuit, and the two extend in a second direction and are electrically connected through a first connecting line in the second corner region. First signal lines are provided with an anti-static structure in at least one of first position and second position, the first position includes a connection between the initiation signal line, initiation signal lead and the first connecting line, and the second position includes a portion of the first signal lines on a side of a row where a first-stage shift register unit is located close to the binding opposite region.

Abstract: This application discloses an optical module, including a light passing hole, an optical splitter, an optical imaging apparatus, and an optical apparatus, where light entering from the light passing hole is incident on the optical splitter; the optical splitter is configured to split the incident light into two parts, one part of the light enters the optical imaging apparatus, and the other part of the light enters the optical apparatus; the optical imaging apparatus is configured to collect a first image; and the optical apparatus is configured to collect a second image, or the optical apparatus is configured to implement an optical detection function.

Abstract: Provided are a pharmaceutically acceptable salt and a crystal form of a nitrogen-containing bridge heterocyclic derivative, and a method for preparing same. Specifically provided are different salt forms and crystal forms of salts of 4-((1S,3S,5R)-3-ethoxy-8-((5-methoxy-7-methyl-1H-indol-4-yl)methyl)-8-azabicyclo[3.2.1]octyl-1-yl)benzoic acid, and a method for preparing same. The provided crystal forms of salts of 4-((1S,3S,5R)-3-ethoxy-8-((5-methoxy-7-methyl-1H-indol-4-yl)methyl)-8-azabicyclo[3.2.1]octyl-1-yl)benzoic acid have good stability and can be better used for clinical treatment.

Abstract: In an embodiment, a method for processing a substrate is provided. The method includes flowing a processing gas comprising a hydrocarbon precursor gas into a processing volume of a process chamber, heating and maintaining the substrate support at a processing temperature of less than about 450° C., applying a dual radio frequency (RF) power to generate a deposition plasma for depositing a carbon film on the substrate, and performing an annealing process to anneal the carbon film deposited on the substrate.

Abstract: The present disclosure relates to crystal forms of a triazine dione derivative and a preparation method therefor. Specifically, the present disclosure relates to different crystal forms of (S)-6-((1-(2-fluoro-5-methylphenyl)ethyl)amino)-3-(tetrahydro-2H-pyran-4-yl)-1,3,5-triazine-2,4(1H,3H)-dione and a preparation method therefor. The crystal forms of (S)-6-((1-(2-fluoro-5-methylphenyl)ethyl)amino)-3-(tetrahydro-2H-pyran-4-yl)-1,3,5-triazine-2,4(1H,3H)-dione provided by the present disclosure have good stability and can be better used for clinical treatment.

Abstract: The present disclosure relates to a pharmaceutically acceptable salt and a crystal form of a fused pyridine ring derivative and a preparation method therefor. Specifically, the present disclosure relates to a choline salt, sodium salt, potassium salt, calcium salt, arginine salt, lysine salt, meglumine salt, ethanolamine salt, hydrosulfate, hydrochloride, tartrate, maleate, citrate, malate, p-toluenesulfonate, and mesylate, and a crystalline form of a compound as represented by formula (I).

Abstract: Compounds with KRAS G12C inhibitory active are disclosed and methods of using the same to treat a cancer comprising a K-Ras G12C mutation.

Abstract: Electrostatic chucks are used to provide a clamping force between the substrate and the pedestal during semiconductor processes. However, charge buildup on the chuck electrodes and/or the substrate may cause damaging current arcs to occur as excess charge finds new pathways to the system ground. This technology uses floating power sources for the electrostatic chuck that are electrically isolated from the system ground. The power sources for the positive and negative electrodes in the pedestal may be connected together, and the typical ground connection between the power supplies can be removed. Floating and connected power supplies create a single current path that balances current between the two electrodes and eliminates free current paths to the system ground. This greatly reduces the likelihood of current arcs from the electrostatic chuck.

Abstract: The present disclosure provides compositions and methods of use to inhibit the interaction of menin with MLL1, MLL2 and MLL-fusion oncoproteins. The compositions and methods of use are useful for the treatment of leukemia, solid cancers, diabetes and other diseases dependent on activity of MLL1, MLL2, MLL fusion proteins, and/or menin.

Abstract: A method for calculating the bedload sediment transport rate by correcting the friction coefficient in the bed sediment movement is provided, including the following steps: S1, creating a calculation formula of a friction coefficient; S2, determining a calculation bedload sediment transport rate formula per unit width; S3, transforming the calculation formula of the bedload sediment transport rate per unit width into a dimensionless form; and S4, substituting the calculation formula of the bedload sediment transport rate per unit width obtained in the S2 into the S3 to obtain a bedload sediment transport rate formula with a corrected friction coefficient.

Abstract: Embodiments described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate with improved etch selectivity. In certain embodiments, a method of forming an amorphous carbon film with film density close to the theoretical density of pure sp2 graphite and reduced hydrogen content is provided.