Abstract: A sheet processing apparatus includes a conveyor, a first folding roller, a second folding roller, a return conveyance passage, and a third folding roller. The conveyor conveys a sheet along a main conveyance passage in a conveyance direction. The second folding roller facing the first folding roller across the main conveyance passage conveys the sheet by a first conveyance amount. The return conveyance passage having a curvature is branched from the main conveyance passage at a branching position and is merged to the main conveyance passage at a merging position. The third folding roller facing the second folding roller across the return conveyance passage conveys the sheet by a second conveyance amount smaller than the first conveyance amount of the second folding roller. The second folding roller is on an outer peripheral side and the third folding roller is on an inner peripheral side of the return conveyance passage.

Abstract: An Al plated electric resistance welded steel pipe for hardening use suppressing the formation of scale to the inside of the plating layer while performing hot forming and an Al plated hollow member using that Al plated electric resistance welded steel pipe, wherein the Al plated electric resistance welded steel pipe for hardening use is comprised of a base material made of a tubular steel plate and having a predetermined chemical composition and an electric resistance welded zone provided at a seam portion of the steel plate and extending in a longitudinal direction of the steel plate, the base material is further provided with an intermetallic compound layer positioned on the surface of the steel plate and including an Al—Fe—Si-based intermetallic compound and an Al plating layer positioned on the surface of the intermetallic compound layer and containing Al and Si, and 70×X/D?Y/t?30 is satisfied, wherein X (?m) is a thickness of the intermetallic compound layer, Y (?m) is a thickness of the Al plating laye

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode and a p-type semiconductor layer each contacting the drift layer, an n-type semiconductor layer contacting the anode electrode and the drift layer, a metal layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and a cathode electrode contacting the semiconductor substrate.

Abstract: A controller is configured to perform a process including operating or releasing an electrically driven hermetic retention device configured to retain airtightness between a door and an opening of a railway vehicle, according to whether or not there is a possibility of an opening operation of the door within a predetermined period.

Abstract: A media processing apparatus includes a slit insertable a sheet bundle of multiple sheets, a sheet-bundle holder, a liquid applier, a press binder, and a controller. The sheet-bundle holder holds the sheet bundle and detects the thickness of the sheet bundle. The liquid applier applies liquid to the sheet bundle. The press binder presses and binds the sheet bundle to perform press-binding process. The controller causes the sheet-bundle holder to hold the sheet bundle and detect the thickness of the sheet bundle, determines whether to cause the liquid applier to apply liquid to the sheet bundle based on the thickness of the sheet bundle, causes the liquid applier to apply the liquid to the sheet bundle when it is determined that the thickness of the sheet bundle is equal or larger than a prescribed thickness, and causes the press binder to press and bind the sheet bundle.

Abstract: An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surface of the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Abstract: A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

Abstract: An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surfaceof the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Abstract: A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Abstract: A radiant heat protection device, a radiant heat protection method, and a service vehicle include a radiant heat reflector (51) having a reflective surface (51a) that reflects radiant heat (H), a coolant retainer (52) disposed on a back surface (51b) of the reflective surface (51a) of the radiant heat reflector (51) and capable of retaining coolant (C), and a coolant feed device (53) configured to feed the coolant (C) to the coolant retainer (52).

Abstract: A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Abstract: A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

Abstract: Provided are curable adhesives, along with adhesive tapes, laminates, and laminated mirror buttons that include the curable adhesive. The curable adhesive includes a (meth)acrylate polymer, a curable oxetane compound, a polymer filler, and a photoinitiator for curable oxetane compounds. The curable adhesive, when cured, can provide excellent interfacial failure resistance.

Abstract: An aqueous adhesive composition in an embodiment of the present disclosure includes a particulate polymer containing a (meth)acrylate polymer and a chlorinated polyolefin.

Abstract: Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

Abstract: An industrial machinery includes: a drive mechanism driving a control target that moves work or a tool; a motor; a first sensor detecting a position of the control target; a second sensor detecting a position of the motor; a current controller controlling a supply current to the motor; a servo controller outputting a torque instruction to the current controller; and a numerical controller calculating a processing force of the control target to the work based on position information on the control target acquired from the first sensor, position information on the motor acquired from the second sensor, and the torque instruction, the numerical controller determining that the tool is in failure if an absolute value of a first component of the processing force becomes equal to or larger than a first threshold value while processing the work, the first component having a frequency lower than a predetermined frequency.

Abstract: An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surfaceof the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Abstract: The invention provides a method for producing a substrate for supporting cells, including a humidification step of humidifying the periphery of a non-fluorine resin based substrate, and a UV irradiation step of irradiating the substrate with UV in an oxygen and/or ozone containing atmosphere during and/or after the humidification step. The invention also provides a substrate for supporting cells, which is a non-fluorine resin based substrate. The substrate has a cell supporting surface for supporting cells, containing a component capable of generating C7H5O+ molecules by beam irradiation of a time-of-flight secondary ion mass spectrometer, such that cells are supported on the cell-supporting surface.

Abstract: An object is to provide a technique capable of suppressing a corrosion of a first electrode and a second electrode. A semiconductor element includes a semiconductor substrate, an Al electrode, a polyimide member selectively disposed on the Al electrode, and an Ni electrode. The polyimide member includes a protruding part which protrudes in a plane direction of an upper surface of the Al electrode and which has a lower portion having contact with the Al electrode in a cross-sectional view, in at least part of a peripheral part of the polyimide member in a top view. The Ni electrode is disposed on the Al electrode and the protruding part.