Abstract: A method for driving a solid state imaging device which prevents the generation of electronic shutter noise even when the integration time for exposure of a pixel region fluctuates. The solid state imaging device performs a rolling shutter operation that sequentially selects a reset row and a read row separated from each other in accordance with a row spacing based on integration time in the pixel array. A dummy row is selected when a reset row or a read row is not selected. The method includes selecting a dummy reset row so that the total of the number of the reset rows and the reset dummy rows that are simultaneously selected is constant regardless of the number of simultaneously selected reset rows.

Abstract: A hydrocarbon gas to be decomposed, optionally mixed with water vapor, is allowed to flow through the gap between various porous tubes 4 constituting a group of porous tubes provided extending vertically in a decomposition reaction column 1 while air or oxygen is jetted homogeneously from the interior to the exterior of the porous tubes in the direction perpendicular to the stream of the hydrocarbon gas to be decomposed, optionally mixed with water vapor. The mixture is then ignited to form a diffusion flame layer B on the outer surface of the porous tubes 4. With the diffusion flame layer as a heat source, the hydrocarbon gas to be decomposed, optionally mixed with water vapor, undergoes pyrolysis.

Abstract: An image sensor, includes: a plurality of pixel circuits, each of which comprises a photoelectric conversion element, a first transistor controlled by a detection signal generated by the photoelectric conversion element, and a second transistor connected to the first transistor and controlled by a select line; and a common amplifier circuit, which is provided commonly to the plurality of pixel circuits, and which has a third transistor connected in parallel to the first transistor, and a current circuit for supplying current to the first and third transistors, wherein an amplifying circuit, which amplifies the detection signal, is formed by the first transistor in a pixel circuit selected by the select line, and by the third transistor in th common amplifier circuit.

Abstract: In order to feed molten metal to a casting mold with precision while preventing introduction of metal oxide into a cylinder casing, an entire valve box 19 is disposed below a liquid level of the molten metal C inside a molten metal furnace D. A discharge duct 23 is upwardly open at a lower end of a valve-element moving space 24. An inlet duct 22 is open to the valve-element moving space 24 at a position higher than the discharge duct 23. Around an opening of the discharge duct 23 to the valve-element moving space 24, there is formed a lower receiving seat 29 in the form of a ring. A valve element 21 includes a lower contact portion 31 which comes into annular contact with the lower receiving seat 29 in association with a lowering movement of the valve element 21.

Abstract: An image sensor for capturing image, has: a plurality of pixels arranged in a matrix each including a photoelectric conversion element for generating current according to received light intensity and a reset transistor for resetting a node of the photoelectric conversion element to a reset potential; and a sample hold circuit for sample holding a pixel potential according to the potential of the node of the pixel. And the sample hold circuit outputs the differential potential, between a first pixel potential at an end of the integration period after a first reset operation of the pixel and a second pixel potential at an end of a reset noise read period after a second reset operation after the integration period, as a pixel signal. Also in the sample hold circuit, when the second pixel potential during the reset noise read period exceeds a predetermined threshold level, the second pixel potential is set to a predetermined reference potential.

Abstract: An image processing circuit for a color image sensor, comprising a color sensitivity correction circuit which adds/subtracts a predetermined offset to/from pixel signals being output by amplifying photoelectric conversion signals of pixels, which have photoelectric conversion element and are arranged in column and row directions, for each column, and multiplies the result by a predetermined gain, wherein the predetermined offset includes a first offset, which is set according to each color, and a second offset, which is set according to a plurality of columns. According to the present invention, the offset of the color sensitivity correction circuit includes a first offset, which is set according to each color, and a second offset, which is set according to a plurality of columns, therefore, periodic moiré in the vertical direction, which is caused by the column output circuit and the output signal supply circuit for each column, can be suppressed, and image quality can be improved.

Abstract: In a solid state image pickup apparatus, a read bus consists of, for instance, four lines of split buses and one line of integrated bus. This integrated bus can be connected to the four lines of split buses. Electrical connection between the integrated bus and each of the split buses is selected by a corresponding switching element. Thus, the number of switching elements connected to one split bus can be reduced and hence the capacitance of the split bus can be reduced. This allows pixel signals to be read out at a higher speed.

Abstract: An image sensor has a pixel array where pixels having photoelectric conversion elements are arranged in a matrix, a plurality of row select lines which are arranged in a row direction, a plurality of column lines which are arranged in a column direction, a sample hold circuit disposed in each column line, a vertical scan circuit for generating vertical scan signals to sequentially select the plurality of row select lines, and a horizontal scan circuit for generating horizontal scan signals to sequentially select the output of the sample hold circuit. The vertical scan circuit sequentially selects and scans the plurality of row select lines within a first vertical scan period when the image sensor is controlled to a first frame period, and also sequentially selects and scans the plurality of row select lines within the first vertical scan period even when the image sensor is controlled to a second frame period, which is longer than the first frame period.

Abstract: A circuit for correction of white pixel defects capable of complementing white pixel faults without using a storage device for holding white pixel fault spots, and an image sensor using the circuit for correction of white pixel defects. Pixels constituting a pixel section are sequentially subjected to white pixel fault complementation process. A nearby pixel data holding section acquires pixel data from a readout circuit and holds the data. A comparison-determination section compares lightness of a target pixel with that of a nearby pixel and determines, based on the comparison result, whether or not the target pixel is associated with a white pixel fault having a lightness higher than that of the nearby pixel by a predetermined value or more.

Abstract: The invention relates to an X-Y address type solid-state image pickup device manufactured by a CMOS process, and has an object to provide an X-Y address type solid-state image pickup device in which a chip area is not increased, manufacturing costs are suppressed, and an image averaging processing can be carried out. Pixel regions Pmn are arranged in a matrix form in regions defined by horizontal selection lines RWm and vertical selection lines CLn. Each of the pixel regions Pmn includes a photodiode 10, a source follower amplifier 14 for converting an electric charge of the photodiode 10 into a voltage and amplifying it to output image data, and a horizontal selection transistor 16 for outputting the image data to a predetermined one of the vertical selection lines CLn. An amplifier/noise cancel circuit 6 has a built-in image averaging circuit for carrying out an averaging processing of the image data outputted from at least two of the plurality of the pixel regions Pmn.

Abstract: The present invention is an image sensor having a pixel array, which arranges pixels having photoelectric conversion circuits in rows and columns; and a pixel selecting circuit for selecting each pixel, wherein the pixel selecting circuit selects pixels of all rows and/or pixels of all columns, and selects a pixel signal at every plural pixels among the selected pixel signals, and pixels selected from a pixel block of a plurality of rows and columns within the pixel array are dispersed within this pixel block.

Abstract: A hydrocarbon gas to be decomposed, optionally mixed with water vapor, is allowed to flow through the gap between various porous tubes 4 constituting a group of porous tubes provided extending vertically in a decomposition reaction column 1 while air or oxygen is jetted homogeneously from the interior to the exterior of the porous tubes in the direction perpendicular to the stream of the hydrocarbon gas to be decomposed, optionally mixed with water vapor. The mixture is then ignited to form a diffusion flame layer B on the outer surface of the porous tubes 4. With the diffusion flame layer as a heat source, the hydrocarbon gas to be decomposed, optionally mixed with water vapor, undergoes pyrolysis.

Abstract: The control inputs of reset switch elements 41 to 45 are commonly connected to a row reset line 51. In a line black clamp type, cathodes as reset ends of photodiodes (31) of optical black pixels 21 to 23 are commonly connected to a potential averaging line 30. In a frame black clamp type, potential averaging lines are connected similarly to respective pixel rows on the vertical scanning start side of an optical black pixel region, and the potential averaging lines may be commonly connected to each other to operate just like one pixel row. A first block includes a pixel array and a vertical scanning circuit, while a second block includes sample and hold circuits, a horizontal scanning circuit, an amplifier and an A/D converter 19.

Abstract: A sintered porous metal filter permitting passage of gases therethrough comprises a filter portion having specified pores for trapping dust as separated from the gas to be treated, and a support portion for supporting the filter portion, the support portion having pores greater than the pores of the filter portion to diminish the pressure loss of the gas to be treated, the filter portion comprising metal particles of small diameter, the support portion comprising metal particles having a greater diameter than the filter portion forming metal particles, the filter portion and the support portion being formed to provide an outer side and an inner side integral therewith by sintering the two kinds of metal particles by hot isostatic pressing. A catalyst reaction portion for rendering noxious components of the gas to be treated harmless is formed in the filter portion or the support portion, or as an independent catalyst layer.

Abstract: A sintered porous metal filter permitting passage of gases therethrough includes a filter portion having specified pores for trapping and separatin dust from the gas to be treated, and a support portion for supporting the filter portion. The support portion has pores greater than the pores of the filter portion to diminish the pressure loss of the gas to be treated. The filter portion includes metal particles of small diameter, and the support portion includes metal particles having a greater diameter than the filter portion forming metal particles. The filter portion and the support portion are formed by sintering the two kinds of metal particles by hot isostatic pressing to provide an outer side and an inner side integrally. A catalyst reaction portion is formed in the filter portion or the support portion, or as an independent catalyst layer to make noxious components of the gas harmless.

Abstract: The porous metal body of the inventtion has a porosity of 7 to 50%, pore sizes of 1 to 500 .mu.m and a pore distribution satisfying the relationship of:(D.sub.95 -D.sub.5)/D.sub.50 .ltoreq.2.5wherein D.sub.5 is the pore size on the cumulative distribution curve of the pore sizes at a cumulative frequency of 5%, D.sub.50 is the pore size on the curve at a cumulative frequency of 50% and D.sub.95 is the pore size on the curve at a cumulative frequency of 95%. The porous body is improved in porosity characteristics and mechanical strength.The porous metal body is prepared by pressing a metal powder to shape and sintering the shaped body by hot isostatic pressing, or alternatively by enclosing a metal powder in a capsule, subjecting the encapsulated powder to a primary sintering treatment in an isostatic medium to form a primary sintered porous body and heat-treating the sintered body with the capsule removed or without removing the capsule.

Abstract: A heat-resistant material having excellent high-temperature strength and high oxidation resistance at temperatures exceeding 1300.degree. C. The material is a heat-resistant Cr-Fe alloy including at least 60% of Cr and at least 5% of Fe, and having a mean grain size of at least 50 .mu.m and having a melting point of at least 1600 .degree. C., or a composite material composed of the said heat-resistant alloy serving as a metal matrix and a ceramic, and containing up to 40% by volume of a dispersed ceramic phase in the metal matrix.