Abstract: A communication device mounted on a vehicle includes a plurality of communication units that are different in width of a communicable range, a determination unit that determines a running state of a vehicle, a selection unit that selects at least one of the plurality of communication units according to a determination result from the determination unit, and a stop unit that stops operation of the communication unit selected by the selection unit.

Abstract: In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.

Abstract: The present invention provides a thermoelectric conversion material that has low thermal conductivity and that is stable at a high temperature, and a thermoelectric conversion module using the same. The thermoelectric conversion material includes a granular base material including a semiconductor, a fine particle with a guest material distributed in the granular base material, and a binder with the guest material on a grain boundary of the granular base material. An amount of the binder is equal to or smaller than an amount of the fine particle, an amount of the granular base material is larger than a total amount of the binder and the fine particle, and the semiconductor and the guest material are in an isolated state not forming a compound by a eutectic reaction, a eutectoid reaction, a peritectic reaction, a peritectoid reaction, a monotectic reaction, or a segregation reaction.

Abstract: A thermoelectric conversion device includes a Heusler alloy film having a structure of B2 or L21 in notation of A2BC and a pair of electrodes on the Heusler alloy film to output an electromotive force generated by a thermal gradient in the Heusler alloy film. The thermoelectric conversion device further includes an electrode for applying an electric field or a voltage to the Heusler alloy film to increase and control an electric conductivity and a Seebeck coefficient S of the Heusler metal film. The device can control to increase an electric conductivity and Seebeck coefficient S by applying an electric field or a voltage through an insulation film to the Heusler alloy film. The device may have a shared connection to select one of outputs of a plurality of thermoelectric conversion devices arranged in a matrix or increase an electromotive force as an output.

Abstract: The present invention prevents adverse effects on an external device due to radiation noise from a signal line. A stereo camera device is provided with: a case; a first image-capturing unit provided at one end in a longitudinal direction of the case; a second image-capturing unit provided at the other end; a circuit board provided inside the case, a processing circuit connected to each of the first image-capturing unit and the second image-capturing unit by a signal line being mounted on the circuit board, and a connector for outputting a signal processed by the processing circuit to an external apparatus being disposed on the circuit board; and a partition member for partitioning the inside of the case into a plurality of spaces along the longitudinal direction at a first interval that corresponds to a frequency bandwidth in which radiation noise from the signal line is suppressed.

Abstract: The present invention prevents adverse effects on an external device due to radiation noise from a signal line, stereo camera device is provided with: a case; a first image-capturing unit provided at one end in a longitudinal direction of the case; a second image-capturing unit provided at the other end; a circuit board provided inside the case, a processing circuit connected to each of the first image-capturing unit and the second image-capturing unit by a signal line being mounted on the circuit board, and a connector for outputting a signal processed by the processing circuit to an external apparatus being disposed on the circuit board; and a partition member for partitioning the inside of the case into a plurality of spaces along the longitudinal direction at a first interval that corresponds to a frequency bandwidth in which radiation noise from the signal line is suppressed.

Abstract: In order to provide a thermoelectric conversion unit capable of generating power with high thermoelectric conversion efficiency, in the thermoelectric conversion unit including: a plurality of thermoelectric conversion modules (1 to 3) including a plurality of pairs of n-type thermoelectric conversion material portions and p-type thermoelectric conversion material portions connected by electrodes; and a hot water pipe 201 and a cold water pipe 202 for generating a temperature difference in the thermoelectric conversion modules and generating power by using a Seebeck effect, at least one of the plurality of thermoelectric conversion modules is different from another thermoelectric conversion module in at least one of a thickness of the thermoelectric conversion material portions, the kind of thermoelectric conversion material, and a thickness of the electrodes.

Abstract: In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.

Abstract: A thermoelectric conversion device includes a Heusler alloy film having a structure of B2 or L21 in notation of A2BC and a pair of electrodes on the Heusler alloy film to output an electromotive force generated by a thermal gradient in the Heusler alloy film. The thermoelectric conversion device further includes an electrode for applying an electric field or a voltage to the Heusler alloy film to increase and control an electric conductivity and a Seebeck coefficient S of the Heusler metal film. The device can control to increase an electric conductivity and Seebeck coefficient S by applying an electric field or a voltage through an insulation film to the Heusler alloy film. The device may have a shared connection to select one of outputs of a plurality of thermoelectric conversion devices arranged in a matrix or increase an electromotive force as an output.

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract: The present invention aims at providing a thermoelectric conversion module with low toxicity, which exhibits conversion efficiency equivalent to that of BiTe. The thermoelectric conversion module of the present invention employs a full Heusler alloy as the material for forming the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit. The material for forming the N-type thermoelectric conversion unit contains at least any one of Fe, Ti, and Si and Sn.

Abstract: Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure.

Abstract: Provided are a thermoelectric device and a thermoelectric module having larger conversion efficiency than conventional ones. A thermoelectric device of the present invention includes a Heusler alloy material, and a pair of electrodes that takes out electromotive force according to a temperature gradient caused in the Heusler alloy material. Further, the dimensions of the Heusler alloy material are defined such that the conversion efficiency of the module is maximized according to an environment having a temperature difference, under which the Heusler alloy material is used.

Abstract: Provided is a thermoelectric conversion element having a greater Seebeck coefficient (S) than the conventional ones. In a thermoelectric conversion element: a nonmagnetic Heusler alloy film (10), a ferromagnetic Heusler alloy film (11) and a nonmagnetic layer (12) are stacked in the named order; a pair of electrodes (23, 24) are disposed for deriving, in accordance with a temperature gradient occurring in parallel to the direction of magnetization (41) of the ferromagnetic Heusler alloy film, an electromotive force occurring perpendicularly to the direction of magnetization of the ferromagnetic Heusler alloy film; a pair of electrodes (21, 22) are disposed for deriving an electromotive force occurring in parallel to the direction of magnetization of the ferromagnetic Heusler alloy film; and the electromotive forces occurring due to an ordinary Seebeck effect and a spin Seebeck effect are simultaneously derived.

Abstract: Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract: Vehicle-mounted camera device includes first imaging unit, second imaging unit, image control unit for outputting imaging timing signals for controlling imaging timings of first imaging unit and second imaging unit to the first imaging unit and the second imaging unit, and outputting transmission timing control signals for controlling transmission timings of signals output from the first imaging unit and the second imaging unit to the first imaging unit and the second imaging unit, and an image processing unit for performing an image processing on the signals output from the first imaging unit and the second imaging unit. Image control unit temporarily offsets a timing of outputting the signal from the first imaging unit to the image processing unit from a timing of outputting the signal from the second imaging unit to the image processing unit based on the transmission timing control signals.

Abstract: Provided is a p-type thermoelectric conversion material achieving a low environment load and low costs and having high efficiency. A thermoelectric conversion device is constituted by raw materials existing in a great amount in nature by using Fe and S as main components. Further, since FeS2 of a pyrite structure has a d orbit derived from Fe in a valence band and a high state density, high performance as the thermoelectric conversion device is implemented by adding an addition element to this material system to express a p-type semiconductor characteristic.

Abstract: A thermoelectric conversion element is provided as an element module with improved utility having an enhanced performance index and utilizing Fe2VAl type alloy thin-film under the condition of the drop in thermal conductivity. The structure of thermoelectric conversion element is comprised of a conductive buffer layer and plural repeating stages of single structures including thermoelectric conversion material layer and a conductive buffer layer, over a buffer layer formed on a substrate; and each of the thermoelectric conversion material layers is comprised of Full-Heusler alloy or Full-Heusler alloy thin film in a thickness range between 1 nm to 200 nm.

Abstract: Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer.