Abstract: A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer. The barrier layer is inserted between the giant magnetoresistive element and the injection layer. By applying a sensing current to both the magnetoresistive element and the injection layer, an output of the magnetic head can be multiplied significantly. The output of the head is increased by increasing a resistance change rate of a magnetoresistive element used as a reading element. The increasing of the resistance change rate is due to that a band of s electrons in the Cu film grown in the highly polarized spin injection layer is placed in a highly polarized state near the Fermi level and the upward spin current only flows into the giant magnetoresistive element, which has multiplied the output.

Abstract: A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

Abstract: A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IW flows in the film surface direction of the second element portion for writing the magnetic information and a current IR flows in the film thickness direction of the first element portion for reading the magnetic information.

Abstract: A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer, The barrier layer is inserted between the giant magnetoresistive element and the injection layer. By applying a sensing current to both the magnetoresistive element and the injection layer, an output of the magnetic head can be multiplied significnantly. The output of the head is increased by increasing a resistance change rate of a magnetoresistive element used as a reading element. The increasing of the resistane change rate is due to that a band of s electrons in the Cu film grown in the highly polarized spin injection layer is placed in a highly polarized state near the Fermi level and the upward spin current only flows into the giant magnetoresistive element, which has multiplied the output.

Abstract: Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a cantilever array having a plurality of cantilevers each having a conductive chip at its distal end. This provides a magnetic solid memory apparatus that has a large memory capacity and a super fast transfer rate, the merits of a hard disk apparatus, and a nanostructure and low power consumption, which are the merits of a semiconductor memory.

Abstract: A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

Abstract: A magnetoresistive head which has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head comprises a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected, and the soft magnetic free layer permits its magnetization to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of said ferromagnetic pinned layer and producing the magnetoresistive effect. The absolute value of the magnetoresistive effect has a peak at a temperature in the range from about 0° C. to 60° C. and for a bias voltage Vs (applied across said ferromagnetic pinned layer and said soft magnetic free layer) in the range from +0.2 to +0.8 V and from ?0.8 to ?0.2 V.

Abstract: A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.

Abstract: Disclosed is a magnetic memory apparatus which comprises a patterned magnetic recording medium in which multilayered films each having a first magnetic layer, a nonmagnetic metal layer or a nonmagnetic insulating layer and a second magnetic layer deposited discretely on a conductive electrode layer formed on a substrate, and a cantilever array having a plurality of cantilevers each having a conductive chip at its distal end. This provides a magnetic solid memory apparatus that has a large memory capacity and a super fast transfer rate, the merits of a hard disk apparatus, and a nanostructure and low power consumption, which are the merits of a semiconductor memory.

Abstract: A magnetic nonvolatile memory cell includes a C-MOSFET, a spin torque magnetization inversion layer and a tunneling magnetoresistive layer arranged in this order. The memory cell has the function of spin torque magnetization inversion and consumes very low power. A random access memory includes a plurality of the memory cells.

Abstract: A process is for laser-welding resinous members, and includes the steps of overlapping a transparent resinous member on an absorptive resinous material, and irradiating the transparent resinous member with a laser beam, thereby welding an interface between the transparent resinous member and the absorptive resinous member as a strip shape, wherein the energy of the laser beam acting on a side of a major-curvature-radius curved part of the strip-shaped welded interface and the energy of the laser beam acting on a side of a minor-curvature-radius curved part thereof are averaged.

Abstract: A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

Abstract: A magnetic head at high sensitivity and with enhanced output having a magnetoresistive element of high output and optimal for use in CPP-GMR, the magnetoresistive element comprising a pinned layer 606 containing a half-metal, a free layer 608 formed on one main surface of the pinned layer 606, a spacer 607 formed between the pinned layer 606 and the free layer 608, an anti-ferromagnetic layer 603 formed on the main surface of the pinned layer 606, a soft magnetic layer 604 formed between the pinned layer 606 and the anti-ferromagnetic layer 606, and a noble-metallic layer 605 formed between the pinned layer 606 and the soft magnetic layer.

Abstract: A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

Abstract: A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

Abstract: Provided is a magnetic head having a magnetoresistive device which has high output and is best suited to high-recording-density magnetic recording/reading. A magnetic sensor having large output can be realized by providing a magnetic sensor which comprises: a first ferromagnetic film; a conductor which intersects the first ferromagnetic film via a first intermediate layer; a current circuit structure which is connected so as to cause a current to flow from the first ferromagnetic layer to the conductor; a second ferromagnetic film which is formed on the conductor in an intersecting manner via a second intermediate layer and which generates a signal of voltage changing according to a change in an external magnetic field; a voltage change amplifier film which contains materials whose resistance changes nonlinearly due to voltage; and an electrode which is connected to the voltage change amplifier film.

Abstract: A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

Abstract: A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

Abstract: A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

Abstract: A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.