Patents by Inventor Jun Ho Jang

Jun Ho Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080142809
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.
    Type: Application
    Filed: February 6, 2007
    Publication date: June 19, 2008
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventors: Jun Ho Jang, Hyun Jae Lee
  • Publication number: 20080128720
    Abstract: A light emitting device is closed. More particularly, a light emitting device capable improving light-extraction efficiency is disclosed. The light emitting device includes a plurality of layers including a reflector layer. The reflector layer has the maximum reflectivity at an incidence angle more than zero degrees and less than an angle ?. The angle ? is represented by the equation ?=Sin?1[n2/n1] (where, n1 is the maximum refractive index of the plurality of layers constituting the light emitting device, and n2 is the refractive index of an external background material).
    Type: Application
    Filed: November 30, 2007
    Publication date: June 5, 2008
    Inventors: Hyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang, Yong Hee Lee
  • Patent number: 7371594
    Abstract: The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with crack-inhibiting walls to remove voids, thereby minimizing cracks or damage that may occur in the nitride semiconductor unit devices during a laser lift-off process. In addition, there is an advantage in that the devices are bonded through a bonding-reinforcing plate or the crack-inhibiting walls to a carrier substrate with a bonding member coated thereon, thereby maintaining a strong bonding force to the carrier substrate.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: May 13, 2008
    Assignee: LG Electronics Inc.
    Inventors: Jung Hoon Seo, Jun Ho Jang, Jong Wook Kim
  • Publication number: 20080093705
    Abstract: A semiconductor device having a fuse structure that can prevent a bridge between a fuse pattern and a guard ring, and a method of fabricating the same are provided. The fuse pattern formed on a multiple-layered metal interconnect layer is stepped shape increasing a vertical distance between the fuse pattern and the guard ring.
    Type: Application
    Filed: August 23, 2007
    Publication date: April 24, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-kyu BANG, Jun-ho JANG, Yoo-mi LEE
  • Publication number: 20070295952
    Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
    Type: Application
    Filed: February 20, 2007
    Publication date: December 27, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventors: Jun Ho Jang, Jae Wan Choi, Duk Kyu Bae, Hyun Kyong Cho, Jong Kook Park, Sun Jung Kim, Jeong Soo Lee
  • Publication number: 20070221907
    Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.
    Type: Application
    Filed: February 9, 2007
    Publication date: September 27, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD.
    Inventors: Jun Ho Jang, Yong Tae Moon
  • Publication number: 20070194343
    Abstract: A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.
    Type: Application
    Filed: February 2, 2007
    Publication date: August 23, 2007
    Applicants: LG ELECTRONICS INC., LG INNOTEK CO., LTD
    Inventors: Jun Ho Jang, Geun ho Kim
  • Patent number: 7109048
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
    Type: Grant
    Filed: September 28, 2004
    Date of Patent: September 19, 2006
    Assignee: LG Electronics Inc.
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo
  • Publication number: 20050067623
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
    Type: Application
    Filed: September 28, 2004
    Publication date: March 31, 2005
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo
  • Publication number: 20030119218
    Abstract: Disclosed is a light emitting device capable of increasing the light power and manufacturing method thereof. The light emitting device includes: a first compound semiconductor layer formed on a substrate and having an etched predetermined region at an upper portion thereof; a second compound semiconductor layer formed on a non-etched region of the first compound semiconductor layer and having a rugged region including a plurality of grooves; a transparent electrode formed on the second compound semiconductor layer; a first electrode formed on the transparent electrode; and a second electrode formed on the etched region of the first compound semiconductor layer.
    Type: Application
    Filed: December 13, 2002
    Publication date: June 26, 2003
    Applicant: LG Electronics Inc.
    Inventor: Jun Ho Jang
  • Publication number: 20020091754
    Abstract: A wireless Internet connection method using combination of numbers is provided, in which the method includes the steps of converting a numerical combination made of at least one number into an Internet site URL (Universal Resources Locator), matching a combination of at least one number with an Internet site URL to form a database, receiving the numerical combination from a user terminal, searching a URL matching with the received numerical combination, and connecting the user terminal with an Internet site having the URL. The wireless Internet connection method solves the problems that it is difficult for a user to access a wireless Internet directly, and that it is difficult for a wireless Internet site administrator to secure an easily recognizable URL, in which the user accesses a wireless Internet using a telephone number of a wireless Internet site administrator, and a connection method can be performed straightly using a shortcut dialing function possessed in a conventional terminal.
    Type: Application
    Filed: December 26, 2000
    Publication date: July 11, 2002
    Applicant: InfoBank Corporation
    Inventors: Jun-Ho Jang, Young-Han Song
  • Patent number: 6395573
    Abstract: Provided with a laser diode and its fabricating method including the steps of: sequentially forming a first conductivity type clad layer, an active layer, a second conductivity type first clad layer, an etch stop layer, a second conductivity type second clad layer, a second conductivity type InGaP layer, and a second conductivity type GaAs layer, on a first conductivity type substrate; forming an insulating layer on the second conductivity type GaAs layer and patterning it, exposing a defined region of the second conductivity type GaAs layer; performing a reactive ion etching using the patterned insulating layer as a mask, etching the second conductivity type GaAs layer, the second conductivity type InGaP layer, and the second conductivity type second clad layer to a specified depth and remaining part of the second conductivity type second clad layer; forming a photoresist on the whole surface including the insulating layer and patterning it, exposing the residual second conductivity type second clad layer; p
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: May 28, 2002
    Assignee: LG Electronics Inc.
    Inventors: Jun Ho Jang, Kang Hyun Sung
  • Patent number: 6130401
    Abstract: Transparent media having high hardness and poor light absorption is cut or scribed with characters or figures by a laser beam. The method includes forming a support of a medium which is a good absorber of a laser beam, and placing the transparent medium on the support, and focusing the laser beam onto the support through the transparent medium while the transparent medium and the laser beam are moved relative to each other. A flame is generated between the support and the transparent medium to machine the transport medium, allowing it to be cut or scribed with characters or figures.
    Type: Grant
    Filed: July 22, 1999
    Date of Patent: October 10, 2000
    Assignee: LG Electronics Inc.
    Inventors: Tae Kyung Yoo, Jun Ho Jang