Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

Abstract: A light emitting element comprises: a substrate including protrusions; and a light emitting structure located on the substrate. The protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions. The angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120° , the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120.

Abstract: Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N2 gas and H2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H2 gas is shut off and N2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced.

Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.

Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.