Abstract: First, an active layer (3) of quantum well structure made of a semiconductor material is sandwiched by n-type and p-type clad layers (2, 4) made of a semiconductor material larger in band gap than the semiconductor of active layer, and a semiconductor laminate wafer (10) is formed so as to compose a laser resonator. The wafer is cleaved into bar form so as to expose end faces of the resonator. Further a thin film (11) containing a dopant is formed on at least one of the end faces of the resonator, and then end face coat films (12, 13) are formed. Thereafter it is heated to diffuse the dopant on the end face of the resonator. As a result, the band gap can be increased only on the resonator end face securely, and therefore this manufacturing method realizes a semiconductor laser having a window structure so as not to absorb light at the end face and capable of preventing deterioration of end face due to surface re-bonding.

Abstract: An optical communication module comprises a light emitting element for generating the transmission signal, a condenser lens for connecting the transmission signal light from the light emitting element to the light transmission line, a light receiving element for receiving the receiving signal light from the light transmission line, and a package that covers the light emitting element and the light receiving element, and uses the condenser lens as an opening window, wherein the wavelength selective film for allowing the required waveband light to transmit and the unwanted waveband light to reflect is coated on the transparent member installed on or in the vicinity of the convex surface of the condenser lens. As a result, a bi-directional optical communication module of an inexpensive construction can be obtained, which can receive the desired waveband light only without using a special component such as a wave separator and does not return the unwanted waveband light to the light transmission line.

Abstract: In order to provide a low-cost and high-reliable method of coupling a first member and a second member with each other, the method comprises the steps of: performing positioning between the first and second members and then bonding the first and second members to each other by a first adhesive bonding treatment to make short-time fixation possible; and bonding the first and second members to each other by a second adhesive bonding treatment requiring a longer fixation time than that required for the first adhesive bonding treatment.

Abstract: An optical connector includes an elongate housing. A partition wall is formed integral with and within the housing. The partition wall is formed with a sleeve holder and an elongate hole. When an engagement member is inserted into the housing, its leg is inserted through the elongate hole. An optical module is accommodated in a case by a spring member, and the case is in turn inserted in the housing. A split sleeve of the optical module is inserted in the sleeve holder, and the engaging member is held by the partition wall and the case. When an optical fiber connector plug is inserted in the housing, a ferrule is inserted into the sleeve and coupled to a rod lens of the optical module.

Abstract: A GaN-based compound semiconductor layer is formed on a substrate. An etch mask of a Ti film is formed on a surface of said gallium-nitride based compound semiconductor. The gallium-nitride based compound semiconductor is selectively etched through an opening of said etch mask. With this method, even where the semiconductor is difficult to etch, it is possible to efficiently etch the semiconductor vertically relative to a surface thereof by once forming a mask without troubles such as stripping-off of a mask. If the etch mask uses a metal film easy to oxidize to perform etching on the semiconductor layer while supplying an oxidizing source, the selective etch ratio can be further increased, enabling etching by a thin etch film.

Abstract: Disclosed is a method of manufacturing a semiconductor laser. A wafer having a substrate having a semiconductor layer including a light-emitting forming portion epitaxially grown on a surface of the substrate is broken into laser chips having a light-emitting surface at an end face thereof. When breaking the wafer into the chips, the breaking at the light-emitting surface is carried out by first forming street grooves in the substrate and thereafter cleaving the light-emitting layer forming portion. By doing so, there is no necessity of thinning the substrate to a required extent, facilitating handling during the manufacture process. A roughened surface of the street groove is provided in the substrate underlying the light-emitting layer forming portion, which is convenient for irregular reflection of a return light beam often encountered in an optical disc pickup device.