Patents by Inventor Jun Kamada

Jun Kamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200377772
    Abstract: The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.
    Type: Application
    Filed: April 19, 2018
    Publication date: December 3, 2020
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Jun KAMADA, Kaichiro HARUTA, Takashi UNEZAKI, Kiyomi IMAGAWA, Kenichi FUJII, Yasuhisa KAYABA, Kazuo KOHMURA
  • Publication number: 20200340692
    Abstract: An air conditioning device includes: a moisture absorption unit that causes a liquid hygroscopic agent to absorb moisture contained in the air; an atomizing regeneration unit that atomizes the moisture contained in the liquid hygroscopic agent supplied from the moisture absorption unit via a first liquid hygroscopic agent transport flow path, removes the moisture from the liquid hygroscopic agent, and regenerates the liquid hygroscopic agent: an air introduction flow path through which the air is introduced to the moisture absorption unit and the atomizing regeneration unit; a second liquid hygroscopic agent transport flow path through which the liquid hygroscopic agent is transported from the atomizing regeneration unit to the moisture absorption unit; and an air internal pressure rising suppression member that suppresses rising of an internal pressure of the air in the air introduction flow path.
    Type: Application
    Filed: October 23, 2018
    Publication date: October 29, 2020
    Inventors: TETSUYA IDE, MAKOTO YAMADA, HIROKA HAMADA, SHO OCHI, JUN SAKUMA, TSUYOSHI KAMADA
  • Patent number: 10781177
    Abstract: The present invention provides a compound represented by formula (I) (in the formula, R1 to R4 each represent a hydrogen atom, an unsubstituted or G1-substituted C1-6 alkyl group or the like, A represents an oxygen atom or the like, Cy represents a C6-10 aryl group or the like), an N-oxide compound thereof, a tautomer or salt thereof. The present invention also provides an agricultural and horticultural fungicide, harmful organism control agent and insecticidal/acaricidal agent containing at least one compound selected from the group consisting of a compound represented by formula (I), a tautomer and salt thereof, as an active ingredient.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: September 22, 2020
    Assignee: Nippon Soda Co., Ltd.
    Inventors: Takaaki Teranishi, Shinya Uesusuki, Jun Iwata, Takuya Kamada, Youhei Munei, Satoshi Nishimura, Hiroki Inoue, Tetsuya Tanaka, Yuka Nakamura, Yusuke Fukushima, Tomomi Kobayashi, Shinya Koubori
  • Publication number: 20200294787
    Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.
    Type: Application
    Filed: June 2, 2020
    Publication date: September 17, 2020
    Inventors: Noriaki FUKIAGE, Takayuki KARAKAWA, Toyohiro KAMADA, Akihiro KURIBAYASHI, Takeshi OYAMA, Jun OGAWA, Kentaro OSHIMO, Shimon OTSUKI, Hideomi HANE
  • Publication number: 20200278126
    Abstract: An air conditioning apparatus according to an aspect of the invention includes: an air conditioner that has a heat pump; a humidity controller of a wet desiccant type; an air transport flow path through which air discharged from the air conditioner is transported to the humidity controller; and a control unit that includes an air conditioner temperature control unit controlling a temperature of air discharged from the air conditioner and a humidity controller humidity control unit controlling a humidity of air discharged from the humidity controller. The air conditioner supplies the air, the temperature of which is controlled, to the humidity controller via the air transport flow path and the humidity controller discharges the air, the humidity of which is controlled, into a room.
    Type: Application
    Filed: October 30, 2018
    Publication date: September 3, 2020
    Inventors: TETSUYA IDE, SHO OCHI, MAKOTO YAMADA, HIROKA HAMADA, JUN SAKUMA, TSUYOSHI KAMADA
  • Publication number: 20200265169
    Abstract: The instruction code including an instruction code stored in the area where the encrypted instruction code is stored in a non-rewritable format is authenticated using a specific key which is specific to the core where the instruction code is executed or an authenticated key by a specific key to perform an encryption processing for the input and output data between the core and the outside.
    Type: Application
    Filed: May 6, 2020
    Publication date: August 20, 2020
    Applicant: SOCIONEXT INC.
    Inventors: Seiji GOTO, Jun KAMADA, Taiji TAMIYA
  • Patent number: 10714332
    Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Noriaki Fukiage, Takayuki Karakawa, Toyohiro Kamada, Akihiro Kuribayashi, Takeshi Oyama, Jun Ogawa, Kentaro Oshimo, Shimon Otsuki, Hideomi Hane
  • Publication number: 20200219734
    Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer and an adhesive resin layer and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component; a step of back-grinding a surface of the electronic component opposite to the circuit forming surface in a state of being attached to the adhesive laminated film; a step of dicing the electronic component in a state of being attached to the adhesive laminated film; and a step of forming an electromagnetic wave-shielding layer on the separated electronic components in a state of being attached to the adhesive laminated film, in this order.
    Type: Application
    Filed: July 9, 2018
    Publication date: July 9, 2020
    Applicant: MITSUI CHEMICALS TOHCELLO, INC.
    Inventors: Takashi UNEZAKI, Jun KAMADA, Akimitsu MORIMOTO, Jin KINOSHITA
  • Publication number: 20200219823
    Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.
    Type: Application
    Filed: July 9, 2018
    Publication date: July 9, 2020
    Applicant: MITSUI CHEMICALS TOHCELLO, INC.
    Inventors: Takashi UNEZAKI, Jun KAMADA, Akimitsu MORIMOTO, Jin KINOSHITA
  • Patent number: 10685145
    Abstract: The instruction code including an instruction code stored in the area where the encrypted instruction code is stored in a non-rewritable format is authenticated using a specific key which is specific to the core where the instruction code is executed or an authenticated key by a specific key to perform an encryption processing for the input and output data between the core and the outside.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: June 16, 2020
    Assignee: SOCIONEXT INC.
    Inventors: Seiji Goto, Jun Kamada, Taiji Tamiya
  • Publication number: 20200181457
    Abstract: Provided is an adhesive member including: a base material having an uneven shape on at least one surface; and a surface layer covering at least a portion of the surface having the uneven shape on the base material.
    Type: Application
    Filed: July 10, 2018
    Publication date: June 11, 2020
    Applicant: MITSUI CHEMICALS, INC.
    Inventors: Jun KAMADA, Tomoya MATAYOSHI, Michio ERIGUCHI, Kaichiro HARUTA, Kenichi FUJII, Takashi UNEZAKI, Kazuo KOHMURA
  • Publication number: 20200168476
    Abstract: This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.
    Type: Application
    Filed: May 10, 2018
    Publication date: May 28, 2020
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Jun KAMADA, Kaichiro HARUTA, Yasuhisa KAYABA, Kazuo KOHMURA, Yoichi KODAMA
  • Patent number: 10641389
    Abstract: An HST control mechanism includes a rotary member, a servo unit, a telescopic member, and a biasing device. The rotary member for controlling a displacement of a hydrostatic transmission (HST) is pivoted outside of a casing incorporating the HST. The servo unit includes a telescopically movable actuator and a valve controlling the telescopic movement of the actuator. The actuator is interlockingly connected to the rotary member. The servo unit is pivotally supported on the casing via a first pivot. The servo unit rotates centered on the first pivot as the rotary member rotates according to the telescopic movement of the actuator hydraulically controlled by the valve. The telescopic member is pivotally supported on the casing via a second pivot. The telescopic member is provided with the biasing device that biases the telescopic member and the rotary member toward a position corresponding to a neutral state of the HST.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: May 5, 2020
    Assignee: Kanzaki Kokyukoki Mfg. Co., Ltd.
    Inventors: Jun Matsuura, Koji Iwaki, Tomoyuki Tsuji, Minoru Kamada, Hideki Kanenobu, Kengo Sasahara
  • Publication number: 20200048515
    Abstract: A body, comprising stacked substrates, wherein: a first substrate, an adhesion layer comprising a reaction product of a compound (A), which has a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and which has a defined weight average molecular weight, and a crosslinking agent (B), which has three or more —C(?O)OX groups in a molecule, in which from one to six of the three or more —C(?O)OX groups are —C(?O)OH groups and which has a weight average molecular weight of from 200 to 600, X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and a second substrate, are layered in this order, and the compound (A) comprises at least one selected from the group consisting of a defined aliphatic amine and a defined compound having a siloxane bond and an amino group.
    Type: Application
    Filed: April 24, 2018
    Publication date: February 13, 2020
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Jun KAMADA, Kazuo KOHMURA, Yasuhisa KAYABA
  • Publication number: 20190315910
    Abstract: The blocked isocyanate is a blocked isocyanate containing a latent isocyanate group, which is an isocyanate group blocked with a blocking agent, wherein the blocked isocyanate includes a first latent isocyanate group that is an isocyanate group blocked with a first blocking agent and a second latent isocyanate group that is an isocyanate group blocked with a second blocking agent; and the first blocking agent is represented by general formula (1) below, and has a higher catalysis activity that activates the isocyanate group than that of the second blocking agent. (where R1 to R3 represent a hydrocarbon group having 1 to 12 carbon atoms or a hydrogen atom, and at least one of R1 to R3 represents a hydrogen atom, and R1 and R3 may be bonded to each other to form a heterocycle.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 17, 2019
    Inventors: Kazuyuki FUKUDA, Jun KAMADA, Takashi UCHIDA, Masakazu MASUI, Shinji TACHIBANA, Hirokazu MIZUMA, Kenichi FUJII
  • Patent number: 10385157
    Abstract: The blocked isocyanate is a blocked isocyanate containing a latent isocyanate group, which is an isocyanate group blocked with a blocking agent, wherein the blocked isocyanate includes a first latent isocyanate group that is an isocyanate group blocked with a first blocking agent and a second latent isocyanate group that is an isocyanate group blocked with a second blocking agent; and the first blocking agent is represented by general formula (1) below, and has a higher catalysis activity that activates the isocyanate group than that of the second blocking agent. (where R1 to R3 represent a hydrocarbon group having 1 to 12 carbon atoms or a hydrogen atom, and at least one of R1 to R3 represents a hydrogen atom, and R1 and R3 may be bonded to each other to form a heterocycle.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: August 20, 2019
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Kazuyuki Fukuda, Jun Kamada, Takashi Uchida, Masakazu Masui, Shinji Tachibana, Hirokazu Mizuma, Kenichi Fujii
  • Publication number: 20190236314
    Abstract: The instruction code including an instruction code stored in the area where the encrypted instruction code is stored in a non-rewritable format is authenticated using a specific key which is specific to the core where the instruction code is executed or an authenticated key by a specific key to perform an encryption processing for the input and output data between the core and the outside.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Applicant: SOCIONEXT INC.
    Inventors: Seiji GOTO, Jun KAMADA, Taiji TAMIYA
  • Publication number: 20190211241
    Abstract: A curable composition includes a blocked isocyanate in which an NCO group of an isocyanate compound having a H6XDI skeleton is blocked by a blocking agent having an O?C—CH—C?O skeleton, a curable functional group-containing fluorine polymer, and an alkoxysilane having a functional group including at least one element of a group 15 element to a group 16 element of the periodic table (excluding oxygen). In the curable composition allowing a titanium oxide to be contained, the molar ratio of the curable functional group to the NCO group is 0.5 to 10; the content ratio of the alkoxysilane with respect to 100 pans by mass of the total amount of the blocked isocyanate and the fluorine polymer is 0.2 to 8 parts by mass; and the content ratio of the titanium oxide with respect to 100 parts by mass of the fluorine polymer is 0 to 200 parts by mass.
    Type: Application
    Filed: May 18, 2017
    Publication date: July 11, 2019
    Inventors: Kazuyuki FUKUDA, Jun KAMADA, Takashi UCHIDA, Hideaki OTSUKA, Shinji TACHIBANA
  • Patent number: 10340172
    Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G?bmin of the storage elastic modulus G?b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G?b250 at 250° C. of 0.005 MPa or above, and a temperature at which G?bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G?cmin of the storage elastic modulus G?c in the range of 25° C. to less than 250° C. of 0.03 MPa.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 2, 2019
    Assignee: MITSUI CHEMICALS TOHCELLO, INC.
    Inventors: Jun Kamada, Noboru Kawasaki, Shinichi Usugi, Makoto Sukegawa, Jin Kinoshita, Kouji Igarashi, Akimitsu Morimoto
  • Patent number: 10303901
    Abstract: The instruction code including an instruction code stored in the area where the encrypted instruction code is stored in a non-rewritable format is authenticated using a specific key which is specific to the core where the instruction code is executed or an authenticated key by a specific key to perform an encryption processing for the input and output data between the core and the outside.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: May 28, 2019
    Assignee: SOCIONEXT INC.
    Inventors: Seiji Goto, Jun Kamada, Taiji Tamiya