Abstract: Described is an optical element having plural electrodes and, disposed therebetween, a stimuli-responsive polymer gel, a liquid which can be absorbed therein and an ion supplying material. As the ion supplying material, preferred is a material showing a volumetric change, in the form of the element, of 0 to 100% under external stimuli. According to the present invention, a novel optical element showing a large change in light transmittance, reflectance or absorption amount and exhibits stable optical properties in repetition can be provided.

Abstract: In order to vaporize an organic monomer at a high temperature and a high saturated vapor pressure in good efficiency and to grow an organic polymer film at a high rate in high vacuum by a plasma polymerization reaction of the resulting organic monomer gas, a liquid divinylsiloxanebisbenzocyclobutene (DVS-BCB) monomer is mixed with a carrier gas, and the mixture is then sprayed on a vaporization vacuum chamber held at a high temperature to form an aerosol made of liquid fine particles of the organic monomer, and a BCB monomer (organic monomer) is instantaneously vaporized via the aerosol to generate a BCB monomer gas (organic monomer gas). Consequently, the aerosol having a large specific surface area has a large vaporization area, and vaporization occurs by heating at a high temperature before a polymerization reaction occurs. Thus, 0.1 g/min or more of the BCB monomer gas can be formed at 200° C.

Abstract: This invention provides a process for producing an organic polymer film whereby when using it as an interlayer insulating film in a semiconductor device, the film exhibits higher adhesiveness at its interfaces where other semiconductor materials are in contact with the lower and the upper surface of the film while an effective dielectric constant in the whole organic polymer film can be further reduced. Specifically, a plurality of organic monomers vaporized is sprayed onto a heated substrate surface via plasma generated in a reaction chamber to form a copolymer film comprising frame composed of a plurality of organic monomer units.

Abstract: A fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor. In this method, a lower electrode of a capacitor is formed on a first insulating film. The first insulating film is typically formed on or over a semiconductor substrate. A dielectric film of the capacitor is formed on the lower electrode to be overlapped therewith. An upper electrode of the capacitor is formed on the dielectric film to be overlapped therewith. A second insulating film is formed to cover the capacitor by a thermal CVD process in an atmosphere containing no plasma at a substrate temperature in which hydrogen is prevented from being activated due to heat.

Abstract: A polymer gel composition and an optical element using the same are provided. The polymer gel composition has a simple constitution, can be applied for a display element of transmission type, and exhibits large differences in the light-scattering index, light refractive index, and light absorption according to an imposed electric field with stable repeating performance. The polymer gel composition and the optical element using it contain a liquid and a charged polymer gel that exhibits volumetric change depending on the absorption/releasing of the liquid according to an imposed electric field.

Abstract: In a method for manufacturing a semiconductor device having a first insulation film, a second insulation film formed over the first insulation film, an inlaid interconnection formed in the second insulation film, and an organic film provided on the inlaid interconnection layer and the second insulation film, the organic film having a dielectric constant lower than the second insulation film, the organic film is grown inside a vacuum chamber.

Abstract: A polymer gel composition and an optical element using the same are provided. The polymer gel composition has a simple constitution, can be applied for a display element of transmission type, and exhibits large differences in the light-scattering index, light refractive index, and light absorption according to an imposed electric field with stable repeating performance. The polymer gel composition and the optical element using it contain a liquid and a charged polymer gel that exhibits volumetric change depending on the absorption/releasing of the liquid according to an imposed electric field.

Abstract: Polymeric particles of a desired particle size improved with the dispersion state of a pigment contained in the high polymeric particles can be obtained by a production method, which includes solution-polymerizing monomers having polymerizable unsaturated bonds in the presence of ionic particles sulfonic group or carboxyl group on the surface thereof.

Abstract: Described is an optical element having plural electrodes and, disposed therebetween, a stimuli-responsive polymer gel, a liquid which can be absorbed therein and an ion supplying material. As the ion supplying material, preferred is a material showing a volumetric change, in the form of the element, of 0 to 100% under external stimuli. According to the present invention, a novel optical element showing a large change in light transmittance, reflectance or absorption amount and exhibits stable optical properties in repetition can be provided.

Abstract: In a method for manufacturing a semiconductor device having a first insulation film, a second insulation film formed over the first insulation film, an inlayed interconnection layer formed in the second insulation film, and an organic film provided on the inlayed interconnection layer and the second insulation film, the organic film having a dielectric constant lower than the second insulation film, the organic film is grown inside a vacuum chamber.

Abstract: In a method for manufacturing a semiconductor device having a first insulation film, a second insulation film formed over the first insulation film, an inlayed interconnection layer formed in the second insulation film, and an organic film provided on the inlayed interconnection layer and the second insulation film, the organic film having a dielectric constant lower than the second insulation film, the organic film is grown inside a vacuum chamber.

Abstract: In order to vaporize an organic monomer at a high temperature and a high saturated vapor pressure in good efficiency and to grow an organic polymer film at a high rate in high vacuum by a plasma polymerization reaction of the resulting organic monomer gas, a liquid divinylsiloxanebisbenzocyclobutene (DVS-BCB) monomer is mixed with a carrier gas, and the mixture is then sprayed on a vaporization vacuum chamber held at a high temperature to form an aerosol made of liquid fine particles of the organic monomer, and a BCB monomer (organic monomer) is instantaneously vaporized via the aerosol to generate a BCB monomer gas (organic monomer gas). Consequently, the aerosol having a large specific surface area has a large vaporization area, and vaporization occurs by heating at a high temperature before a polymerization reaction occurs. Thus, 0.1 g/min or more of the BCB monomer gas can be formed at 200° C.

Abstract: A DVS-BCB polymer film is grown by heating a divinyl siloxane bisbenzocyclobutene (DVS-BCB) monomer in a vaporization controller with continuously supplying; supplying a carrier gas and maintaining a partial pressure of the DVS-BCB monomer at a state lower than a saturated vapor pressure, thereby to vaporize the monomer; transporting the carrier gas containing the DVS-BCB monomer from the vaporization controller to an evacuated reaction chamber; and spraying the gas on the heated surface of a substrate in the reaction chamber.

Abstract: A method of forming an organic polymer insulator in a semiconductor device comprises the step of causing a thermal polymerization of at least one kind of monomers and oligomers supplied in vapor phase.

Abstract: A method of forming a capacitor by forming a dielectric layer over a bottom electrode layer, forming a top electrode layer over the dielectric layer to form laminations of the bottom electrode layer, the dielectric layer and the top electrode layer, and selectively etching the laminations to form a capacitor, the dielectric layer being etched by a reactive ion etching so that the dielectric layer of the capacitor receives no substantive damage in the etching process.

Abstract: A method for manufacturing a nonvolatile semiconductor memory device comprises the steps of forming a ferroelectric capacitor, sputtering a first dielectric film on the ferroelectric capacitor, and depositing a second dielectric film on the first dielectric film by a CVD process using tetraethylorthosilicate as a source gas and ozone as an oxidizing agent at a temperature between 350 and 500.degree. C. The first dielectric film prevents hydrogen and water from being introduced into the ferroelectric film of the ferroelectric capacitor during and after the CVD process, thereby improving polarization, leakage current and dielectric breakdown characteristics of the ferroelectric capacitor.

Abstract: A toy that can be assembled by a child. At least one first block element consisting of a rod made of a flexible material including a fitting terminal at one end or opposite ends thereof is provided. The fitting terminal has at least one fitting projection thereon. A second block element has a plurality of fitting holes each adapted to be fitted onto one of the fitting projections. The first block element and the second block element are combined with each other during an assembling operation so as to exhibit a desired three dimensional configuration. Each fitting terminal is provided with a plurality of fitting projections projecting from the outer surface of the fitting terminal so that the fitting projections can be selectively fitted into one of the fitting holes on the second block element. The rod constituting the first block element is composed of a plastically deformable core and a flexible sheath molded of a soft synthetic resin surrounding the core.