Abstract: A method of making semiconductor devices which enables control of the impurity concentration and fine patterning by making removal of residual stress due LOCOS oxidation compatible with the formation of deep wells. A selective oxide layer is formed for separating element regions on a principal plane of a semiconductor substrate, for example, a p.sup.- -type silicon substrate 1. A mask is formed (for example photoresist 47) on the surface including the selective oxide layer and impurities (for example phosphorous) of a conductivity type opposite that of the semiconductor substrate are introduced via an opening in the mask. Then the selective oxide film is annealed by a high-temperature treatment while a deep well (for example n-type deep well 50) is formed by introducing the impurities.

Abstract: A method for fabricating DRAMs each having a COB structure, and the semiconductor device formed by this method, are provided. In one embodiment, the word line and/or bit line is covered with an insulating film having a comparatively small etching rate. Contact holes are formed while being defined by those insulating films in self-alignment.

Abstract: A charging member including an elastomeric member including an elastomeric material. The elastomeric material has a double oxide contained therein, the double oxide being a solid solution compound of oxides of at least two different metals formed by crystal lattice substitution. The at least two different metals have different valences, whereby the double oxide has an electroconductivity that is larger than that of either one of the oxides of at least two different metals when not in solution.

Abstract: A semiconductor memory device has a semiconductor substrate, and memory cells provided at intersections between word line conductors and bit line conductors. Adjacent two memory cells for each bit line conductor form a memory cell pair unit structure, in which first semiconductor regions of the transistors of the adjacent two memory cells are united at their boundary into a single region and are connected to one of the bit line conductors via a bit line connection conductor, the gate electrodes of the transistors of the adjacent two memory cells are connected to word line conductors adjacent to each other, respectively, and the second semiconductor regions of the transistors of the adjacent two memory cells are connected to the respective information storage capacitors.

Abstract: A cellular conductive roller has closed cells and open cells with conductive powder filling the open cells of the cellular conductive roller. A method for making a cellular conductive roller includes filling the open cells in the cellular conductive roller with conductive powder, adhering a tacky sheet to the surface of said cellular conductive roller; then peeling said tacky sheet off the surface of said cellular conductive roller. Also disclosed is an electrophotographic device using the cellular conductive roller and a process cartridge into which the cellular conductive roller is integrated.

Abstract: A controller for an absorption cold/hot water generating machine, in which a refrigerating cycle is formed by pipe-connecting an evaporator, an absorber, a solution heat exchanger, a low-temperature generator, a condenser, and a high-temperature generator, and the solution level in a header of the high-temperature generator is kept within a prescribed range by controlling the flow rate of the solution fed from the absorber to the high-temperature generator; wherein a solution pump for feeding a solution from the absorber to the high-temperature generator is inverter-driven, and there is provided pressure difference detecting means for detecting a difference in pressure between the high-temperature generator and the absorber; and wherein there is provided control means which controls the solution pump driving frequency of the inverter as a function of a pressure difference between the high-temperature generator and the absorber.

Abstract: A method for manufacturing preforms used in molding optical elements includes: (1) forming an array made from a material for optical elements, in which a plurality of preform portions used in molding optical elements are connected; (2) applying vibration to the outer peripheral part of the preform portion in the thickness direction of the array by a pair of punches; and then (3) punching the preform portions.

Abstract: A charging member supplied with a voltage to charge a charge-receiving member such as an electrophotographic photosensitive member has an elastic layer of an ethylene-propylene copolymer containing a diene component. The ethylene-propylene copolymer has an iodine value of 23-32. The charging member is improved in resistance to permanent deformation while providing excellent images for a long period.

Abstract: A method for making optical preforms of optical elements without residual stress or distortion is provided. In this method, an optical material is supplied between upper and lower molds. The upper mold has a plurality of recesses arranged in a predetermined pitch, and each recess corresponds to a first surface shape of the optical element. The lower mold has a plurality of recesses facing the recesses of the upper mold and each recess of the lower mold corresponds to a second surface shape of the optical element. The supplied optical material is pressed between the upper and lower molds to be a set of optical preforms. The set of optical preforms is processed by die punching or tool cutting to separate each optical preform from the set of optical preforms. Each optical preform is used for producing an optical element by further pressing. Alternatively, optical element can be formed directly by the press molding process.

Abstract: A phase shifting mask is used for manufacturing a semiconductor integrated circuit device including a conductor pattern in which the line width of patterned conductor strips or the space between patterned conductor strips is not constant. For main transparent areas in the mask corresponding to the conductor pattern, auxiliary pattern segments are provided for compensating changes in the phase distribution of transmitted light caused by changes of the line width or the space. Alternately, the spaces between the conductor strips are adjusted to suppress the changes in the phase distribution of transmitted light. Whether the auxiliary pattern segments should have the phase shifting function is determined depending upon the disposition of the main transparent areas.

Abstract: A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. In a first aspect, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry.

Abstract: A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Abstract: A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and provides a structure for controlling resistance value variation of diffused resistors originated in a stress generated at time of forming the oxide film for isolation. A distance between an end portion on a longer side closest to a thermal oxide film of the diffused layer and an end of the thermal oxide film is apart from each other by a predetermined value determined by stress distribution in the semiconductor region or by at least 4 .mu.

Abstract: A semiconductor memory device has a semiconductor substrate, word line conductors and bit line conductors, and memory cells provided at intersections between the word line conductors and bit line conductors. Adjacent two memory cells for each bit line conductor form a memory cell pair unit structure, in which first semiconductor regions of the transistors of the adjacent two memory cells are united at their boundary into a single region and are connected to one of the bit line conductors via a bit line connection conductor, the gate electrodes of the transistors of the adjacent two memory cells are connected to word line conductors adjacent to each other, respectively, the second semiconductor regions of the transistors of the adjacent two memory cells are connected to the respective information storage capacitors.

Abstract: A white electroconductive coating composition includes a white pigment having a whiteness of at least 60, a white conductive material having a whiteness of at least 50 and a volume resistivity of at most 1.times.10.sup.10 ohm.cm. The coating composition is suitable to provide a a coating film showing a whiteness of at least 60 and a surface resistivity of at most 1.times.10.sup.11 ohm/cm.sup.2. Such a white conductive layer may be formed on a back side of a surface insulating film of a transfer material carrying member of an electrophotographic image forming apparatus to provide a reference white pattern for detecting a density of a toner image formed on the carrying member, thereby allowing controlled image formation based on the detected density data.

Abstract: The present invention pertains to a charging member which is energized to charge a chargeable member by contact-electrification and which comprises a conductive elastic layer having a surface layer containing a polymer having a main chain containing a structural unit of the following formula:--O--(CH.sub.2).sub.n --O--CO--wherein n is an integer of from 4 to 10.With stable charging properties, the charging member of the present invention has relatively uniform surface resistance, little dependency on the environmental conditions, and decreased contamination of photosensitive bodies and the like.

Abstract: The etch-back amount of a silicon oxide film of a memory array which is a higher altitude portion is increased when etching back and flattening the silicon oxide film by arranging a first-layer wiring on a BPSG film covering an upper electrode of an information-storing capacitative element only in a peripheral circuit but not arranging it in the memory array.Thus, a DRAM having a stacked capacitor structure is obtained such that the level difference between the memory array and peripheral circuit is decreased, and the formation of wiring and connection holes are easy.

Abstract: The present invention pertains to an elastic member and a charging roller for electrophotography which are provided with an electrical semi-conductive elastic layer on a conductive body with an adhesive layer arranged between them. The adhesive layer contains carbon black and graphite at a total content of 20 to 80 phr as conductive fillers and also contains a thermoplastic elastomer as a binder. Disclosed is an electrophotographic device having an elastic member and an electrophotographic photosensitive body.

Abstract: A charging member including an elastomeric member including an elastomeric material. The elastomeric material includes a polymer dispersion medium having a double oxide dispersed therein, the double oxide being a solid solution compound of oxides of at least two different metals formed by crystal lattice substitution. The at least two different metals have different valences, whereby the double oxide has an electroconductivity that is larger than that of either one of the oxides of at least two different metals when not in solution. Also, the charging member has resistance stability in the semiconductive region.