Abstract: The invention provides a metabolism improving agent containing a rare fatty acid such as hydroxylated fatty acid, oxo fatty acid and the like, and further, food, pharmaceutical product and the like containing the metabolism improving agent.

Abstract: The present invention provides production of hydroxylated fatty acid by a hydration reaction using a novel enzyme derived from Lactobacillus and using fatty acid as a substrate, and further, a production method of oxo fatty acid by an enzyme reaction or chemical oxidation reaction using the hydroxylated fatty acid as a substrate. In addition, a valuable novel rare fatty acid obtained by such production method is also provided.

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

Abstract: The present invention provides a production method of oxo fatty acid, as well as rare fatty acids such as conjugated fatty acid, hydroxylated fatty acid, partially saturated fatty acid and the like, which uses 4 kinds of enzymes (fatty acid-hydratase, hydroxylated fatty acid-dehydrogenase, oxo fatty acid-isomerase, oxo fatty acid-enone reductase) derived from Lactobacillus plantarum including lactic acid bacteria and the like. Furthermore, the present invention also provides a more efficient production method of oxo fatty acid and the like, which partly uses a chemical oxidation reaction in combination.

Abstract: A film forming apparatus sequentially supplies a raw material gas of a compound containing chlorine and an element other than the chlorine, and a first reaction to form a fil. The film forming apparatus includes a rotary table, a raw material gas ejection port configured to eject the raw material gas to a first region, a reaction gas supply part configured to supply, to a second region, a first reaction gas and a second reaction gas that reacts with chlorine to generate a third reaction product, in order to prevent a second reaction product from being generated due to a reaction of the chlorine remaining in the vacuum container with air when performing the opening-to-air. The film forming apparatus further includes an atmosphere separation part, a first exhaust port and a second exhaust port, and a controller.

Abstract: The invention provides a metabolism improving agent containing a rare fatty acid such as hydroxylated fatty acid, oxo fatty acid and the like, and further, food, pharmaceutical product and the like containing the metabolism improving agent.

Abstract: The present invention provides a derivative of hydroxylated fatty acid which has a high content of hydroxylated fatty acid, and permits easy ingestion and easy handling, and a production method thereof. The present invention provides a method for producing a homopolymer of hydroxylated fatty acid, including polymerizing the hydroxylated fatty acid by using an enzyme. The homopolymer of hydroxylated fatty acid is stabilized. In addition, a novel, utilizable homopolymer of hydroxylated fatty acid obtained by this production method is also provided.

Abstract: The present invention provides an anti-inflammatory agent containing a rare fatty acid such as hydroxylated fatty acid, oxo fatty acid and the like, and further, food, pharmaceutical product and the like containing the anti-inflammatory agent.

Abstract: A method of forming a silicon nitride film on a substrate having a recess pattern formed in a surface thereof, includes: forming the silicon nitride film in conformity to the surface of the substrate by supplying each of a raw material gas containing silicon and a nitriding gas for nitriding the raw material gas into a processing container in which the substrate is accommodated; shrinking the silicon nitride film such that a thickness thereof is reduced from a bottom side toward an upper side of the recess pattern by supplying a plasmarized shaping gas for shaping the silicon nitride film to the substrate in a state where the supply of the raw material gas containing silicon into the processing container is stopped; and burying the silicon nitride film in the recess pattern by alternately and repeatedly performing the forming the silicon nitride film and the shrinking the silicon nitride film.

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

Abstract: A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

Abstract: A film forming method of forming a silicon nitride film on a substrate, which includes a first film and a second film having different incubation times when a source gas containing silicon and a first nitriding gas for nitriding the silicon are supplied, includes: supplying a plasmarized hydrogen gas to the substrate; supplying a processing gas formed of silicon halide to the substrate; forming a thin layer of silicon covering the first film and the second film by alternately and repeatedly performing the supplying the plasmarized hydrogen gas and the supplying the processing gas; forming a thin layer of silicon nitride by supplying a second nitriding gas for nitriding the thin layer of silicon to the substrate; and forming the silicon nitride film on the thin layer of the silicon nitride by supplying the source gas and the first nitriding gas to the substrate.

Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

Abstract: The present disclosure provides a novel aldehyde synthase gene having activity of synthesizing a medium-chain aldehyde. Such gene encodes a protein comprising the amino acid sequence as shown in SEQ ID NO: 2.

Abstract: A prediction task assistance apparatus includes a storage that stores a piece of information on a predetermined index value and pieces of information on predetermined events used in a financial institution. A computation device reads the stored pieces of information on the index value and the events, executes correlation analysis using the read information, generates a regression formula used to estimate the index value based on the information on the event that gives a predetermined effect on the index value, and generates a question screen. The question screen has an interface allowing an answer to be given to a selective type question on trend prediction of the event configuring a variable in the regression formula, distributes the question screen to terminals, obtains answers of the trend prediction via the question screen, calculates a prediction value of the index value, and outputs information on the prediction value to a predetermined device.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: An information processing apparatus includes a memory configured to store a recognition result, accuracy and timing of an image captured at a point, and a processor coupled to the memory and the processor configured to specify the image configured to include a designated recognition object, and search for the image having a same recognition result as the recognition object by referring to the memory, based on the point and timing at which the specified image has been captured and movement speed information of the recognition object.

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

Abstract: Provided is a purification method for water to be used for culture of an aquatic organism, wherein the method includes a nitrification step of oxidizing ammonia to nitric acid using a nitrifying bacterium adhering to a base material containing an alkaline earth metal, and a denitrification step of reducing nitric acid to nitrogen using a denitrifying bacterium adhering to a base material containing a biodegradable resin which has a structural unit derived from dicarboxylic acid.