Abstract: A medium processing apparatus includes a liquid applier, a binder, a mover, first and second rotators. The first rotator rotates the binder between a first inclined posture and a first parallel posture. The second rotator rotates the liquid applier between a second inclined posture and a second parallel posture, and includes a posture change assembly and a collision avoidance assembly. The posture change assembly changes the posture of the liquid applier from the second inclined or parallel posture to the second parallel or inclined posture at a posture changing position. The collision avoidance assembly allows the binder in the first inclined posture to pass a restriction position, and restricts the binder in the first parallel posture from passing through the restriction position. The binder reaches the restriction position before the liquid applier reaches the posture changing position.

Abstract: A medium processing apparatus includes a liquid applier, a post-processing device, a liquid storage unit, a liquid detector, and circuitry. The liquid applier applies liquid to a part of at least one medium. The post-processing device performs a given process on a bundle of media. The liquid storage unit stores the liquid. The liquid detector detects the liquid in the liquid storage unit. The circuitry is to determine whether to cause the liquid applier to apply the liquid on the at least one medium based on a detection result of the liquid detector, and set a number of times of application of the liquid to be equal to or less than a given number of times of application of the liquid when the liquid detector does not detect the liquid in the liquid storage unit.

Abstract: A semiconductor substrate includes: a first n-type layer disposed within the peripheral region and located in a range including a corner between an upper surface and a side surface of the semiconductor substrate; a second n-type layer disposed within the peripheral region and located below the first n-type layer to be in contact with a lower electrode; and an n-type drift layer distributed across the element region and the peripheral region to have an n-type impurity concentration lower than those of the first n-type layer and the second n-type layer. The n-type drift layer is disposed between the first n-type layer and the second n-type layer and in contact with both of the first n-type layer and the second n-type layer. An anode of a diode is electrically connected to an anode electrode, and a cathode of the diode is electrically connected to the first n-type layer.

Abstract: A switching element includes a gate electrode and a source electrode disposed in each of trenches provided in a semiconductor substrate. A longitudinal direction of the trench is defined as a first direction, and the trenches are spaced from each other in a second direction intersecting the first direction. Each of the trenches extends in the first direction while being displaced in the second direction so as to satisfy that an inter-trench region between the adjacent trenches has narrow portions and wide portions alternately arranged in the first direction and alternately arranged in the second direction via the trenches. A source region is distributed across the narrow portion and the wide portion, and is in contact with the source electrode in the wide portion.

Abstract: A semiconductor device includes a voltage sustaining layer of a first conductivity type and a superjunction layer disposed in contact with an upper surface of the voltage sustaining layer. The superjunction layer includes first regions of the first conductivity type and second regions of a second conductivity type alternately arranged along a first direction. Each of the second regions includes a lower second region in contact with the voltage sustaining layer and an upper second region disposed in contact with an upper surface of the lower second region. A lower maximum width that is a maximum width in the first direction of the lower second region is greater than an upper maximum width that is a maximum width in the first direction of the upper second region. A density of fixed charges during depletion is higher in the lower second region than in the upper second region.

Abstract: A base layer has a low concentration peak at a position between a portion located at a same depth as a lower end portion of a gate electrode and a portion located at a same depth as an upper end portion of the gate electrode in a concentration profile of an impurity concentration in a depth direction. An impurity region has a boundary with the base layer in the depth direction at a position between a first peak position, at which the impurity concentration of the base layer is maximum between the portion located at the same depth as the lower end portion and the position of the low concentration peak, and a second peak position, at which the impurity concentration of the base layer is maximum between the position of the low concentration peak and the portion located at the same depth as the upper end portion.

Abstract: Systems, methods, and non-transitory computer-readable media generate custom animations comprises a structure of a coarse animation prompt. For example, the disclosed systems receive a style prompt and receive a coarse animation prompt. The disclosed systems generate, utilizing a media generation model, a custom animation having a structure and timing of the coarse animation prompt and a style informed by the style prompt. The disclosed systems also provide the custom animation for display via a graphical user interface.

Abstract: A method, apparatus, non-transitory computer readable medium, and system for image processing include obtaining an expression input indicating a facial expression, generating a guidance feature based on the expression input, where the guidance feature comprises a facial action coding system (FACS) representation of the facial expression, and generating a synthetic image based on the guidance feature, where the synthetic image depicts the facial expression

Abstract: An electric lock device for an opening and closing member includes: a lock portion; a rod; a biasing member; and an actuator. The actuator includes a case, a motor, a wheel, and a rotor. The wheel is provided with a pressing portion that is configured to engage with a receiving portion provided on the rotor or the rod when the wheel rotates in a predetermined direction to move the rod. When a rotation force is applied to the rotor in a direction against a biasing force of the biasing member via the rod in a state where the rod is biased by the biasing member in a direction in which the rod is engaged with the lock portion, the rotor is capable of rotating independently of the wheel in a direction in which the receiving portion is separated from the pressing portion.

Abstract: A silicon carbide semiconductor device includes a semiconductor element having a first-conductivity-type region, a gate-trench structure, an interlayer insulation film, a first electrode, and a recess. The gate-trench structure has a gate trench. The first electrode includes a metal layer, a barrier metal, an electrode layer, and a protrusion. The protrusion has a first protruding portion and a second protruding portion disposed respectively at both sides of the gate trench. The electrode layer has a portion embedded in the recess. A distance between a tip of the first protruding portion and a tip of the second protruding portion in a width direction of the gate-trench is smaller than a width of the portion of the electrode layer below the protrusion.

Abstract: A system that utilizes neural networks to generate looping animations from still images. The system fits a 3D model to a pose of a person in a digital image. The system receives a 3D animation sequence that transitions between a starting pose and an ending pose. The system generates, utilizing an animation transition neural network, first and second 3D animation transition sequences that respectively transition between the pose of the person and the starting pose and between the ending pose and the pose of the person. The system modifies each of the 3D animation sequence, the first 3D animation transition sequence, and the second 3D animation transition sequence by applying a texture map. The system generates a looping 3D animation by combining the modified 3D animation sequence, the modified first 3D animation transition sequence, and the modified second 3D animation transition sequence.

Abstract: A switching element includes a semiconductor substrate, a gate insulating film, and a gate electrode that is disposed inside the trench. The semiconductor substrate further includes: an n-type source region, a p-type body region, an n-type drift region, a p-type first electric field reduced region, and a p-type connection region. When a permittivity of the connection region is ?(F/cm), a critical electric field strength of the connection region is Ec (V/cm), an elementary charge is e (C), an area density of p-type impurity when viewed in a plan view of the connection region located below the trench is Q (cm?2), Q>?*Ec/e.

Abstract: A semiconductor device includes a substrate, a drift layer of a first conductivity type, a first electrode, a second electrode, a plurality of gate electrodes, and a plurality of repeat regions of a second conductivity type. When center lines respectively passing through centers of the gate electrodes in an arrangement direction of the gate electrodes and extending in a thickness direction of the substrate are defined as cell center lines, a distance between adjacent two of the cell center lines is defined as a cell pitch, center lines respectively passing through centers of the repeat regions in the arrangement direction are defined as repeat center lines, and a distance between adjacent two of the repeat center lines in the arrangement direction is defined as a repeat pitch, the cell pitch is different from the repeat pitch.

Abstract: The semiconductor device includes a semiconductor substrate partitioned into an active region, a peripheral high-breakdown-voltage region, and a boundary region disposed between the active region and the peripheral high-breakdown-voltage region. The semiconductor device further includes a main electrode, an insulating layer disposed in at least a portion of the boundary region and having an end portion facing the active region, a gate wiring disposed above the insulating layer, a gate electrode disposed in the active region, and a gate lead portion connecting the gate electrode and the gate wiring and extending above the end portion of the insulating layer. The boundary region includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type disposed above the first semiconductor layer. The second semiconductor layer has a contact portion in contact with the main electrode at a position outside the gate wiring.

Abstract: A lock device attached to a stationary body so that an opening and closing body is locked in a closed state with respect to the stationary body includes a driving member that is driven in response to movement of an operation member, and a rod movable in a longitudinal direction. The driving member includes a coupling portion coupled to the rod. The rod includes a lock portion engageable with and disengageable from a lock hole of the opening and closing body, and a holding portion holding the coupling portion so that the coupling portion is slidable in a moving direction of the rod. When the rod is moved in a lock releasing direction in which lock of the lock portion is released by the driving member, the holding portion and the coupling portion move in the lock releasing direction.

Abstract: A switching element includes a semiconductor substrate, a gate insulating film, and a gate electrode that is disposed inside the trench. The semiconductor substrate further includes: an n-type source region, a p-type body region, an n-type drift region, a p-type first electric field reduced region, and a p-type connection region. When a permittivity of the connection region is ? (F/cm), a critical electric field strength of the connection region is Ec (V/cm), an elementary charge is e (C), an area density of p-type impurity when viewed in a plan view of the connection region located below the trench is Q (cm?2), Q>?*Ec/e.

Abstract: A silicon carbide semiconductor device includes a semiconductor element having a first-conductivity-type region, a gate-trench structure, an interlayer insulation film, a first electrode, and a recess. The gate-trench structure has a gate trench. The first electrode includes a metal layer, a barrier metal, an electrode layer, and a protrusion. The protrusion has a first protruding portion and a second protruding portion disposed respectively at both sides of the gate trench. The electrode layer has a portion embedded in the recess. A distance between a tip of the first protruding portion and a tip of the second protruding portion in a width direction of the gate-trench is smaller than a width of the portion of the electrode layer below the protrusion.

Abstract: A semiconductor device includes a substrate, a drift layer of a first conductivity type, a first electrode, a second electrode, a plurality of gate electrodes, and a plurality of repeat regions of a second conductivity type. When center lines respectively passing through centers of the gate electrodes in an arrangement direction of the gate electrodes and extending in a thickness direction of the substrate are defined as cell center lines, a distance between adjacent two of the cell center lines is defined as a cell pitch, center lines respectively passing through centers of the repeat regions in the arrangement direction are defined as repeat center lines, and a distance between adjacent two of the repeat center lines in the arrangement direction is defined as a repeat pitch, the cell pitch is different from the repeat pitch.

Abstract: In a semiconductor device, a first deep layer has a high-concentration region and a low-concentration region in a concentration profile of an impurity concentration along a depth direction. The high-concentration region has a high concentration peak at which an impurity concentration is maximum, and includes a region that is not depleted in an off state. The low-concentration region is closer to a high-concentration layer than the high-concentration region, has a region in which a gradient of change in impurity concentration is smaller than a predetermined value, and is depleted in the off state. A first length between a first position closest to a base layer in the first deep layer and a second position of the high concentration peak is shorter than a second length between the second position and a third position closest to the base layer in the low-concentration region.

Abstract: Methods, systems, and non-transitory computer readable storage media are disclosed for generating digital chain pull paintings in digital images. The disclosed system generate, utilizing a neural network, a plurality of matrices over an ambient space for a plurality of polygons of a three-dimensional mesh based on a plurality of features of the plurality of polygons associated with the three-dimensional mesh. The disclosed system determines a gradient field based on the plurality of matrices of the plurality of polygons. The disclosed system generates a mapping for the three-dimensional mesh based on the gradient field and a differential operator corresponding to the three-dimensional mesh.