Abstract: A semiconductor device may include a semiconductor substrate, an insulator film covering a part of an upper surface of the substrate, and a gate electrode opposing the upper surface via the insulator film. In the semiconductor substrate, a drift layer extending through a body layer to the upper surface opposes the gate electrode via the insulator film. The insulator film extends from the upper surface of the semiconductor substrate to an upper surface of the gate electrode by passing between the gate electrode and an upper electrode, and defines an opening at the upper surface of the gate electrode. In a first region being a set of straight lines where each line extends through an opposing surface of the drift layer that opposes the gate electrode perpendicularly to the opposing surface, the insulator film does not exist on the upper surface of the gate electrode.

Abstract: A constant temperature water supply apparatus includes a temperature adjustment unit that circulates cooling water and adjusts the temperature of a spindle unit of a processing apparatus and a processing water temperature adjustment unit. The temperature adjustment unit includes a pump that sends the cooling water to the spindle unit, a cooling water cooling unit, a first pipe that connects the pump and the cooling unit, a second pipe that connects the cooling unit and the spindle unit, and a third pipe that connects the spindle unit and the pump. The processing water temperature adjustment unit includes a processing water pipe that has one end connected to a water source and supplies processing water from the other end side to a processing tool and a heat exchange unit on the processing water pipe.

Abstract: A water temperature setting method for a processing apparatus for processing a workpiece held by a holding table by rotating at a high speed a spindle with a processing tool mounted thereto and supplying processing water to the processing tool. A set temperature for the processing water supplied to the processing tool is set to be higher than a set temperature for spindle cooling water supplied to a spindle unit that rotates the spindle at the high speed, in consideration of a lowering in temperature due to evaporation of the processing water scattered from the processing tool due to the high-speed rotation of the processing tool.

Abstract: A trench gate semiconductor switching element is provided. The semiconductor substrate of this element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench; and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region, and in contact with the gate insulation layer on a lower side of the body region. The bottom region includes a low concentration region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench; and a high concentration region in contact with the gate insulation layer in a second range of the bottom surface adjacent to the first range.

Abstract: A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region. The bottom region includes a first bottom region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench and extending from the bottom surface to a first position; and a second bottom region in contact with the gate insulation layer in a second range adjacent to the first range and extending from the bottom surface to a second position lower than the first position.

Abstract: A driving support apparatus for a hybrid vehicle including an engine and a motor, in which the engine starts running when any one of parameters indicating a state of the hybrid vehicle reaches an engine start threshold set for the parameters, the driving support apparatus includes a current value acquiring section that acquires current values of the parameters, a margin calculation section that calculates margin levels for the current values of the parameters for keeping the engine stopping using the current values of the parameters and the engine start thresholds, and an output section that outputs the smallest margin level of the calculated margin levels.

Abstract: A damper device is configured so that a piston moves in a cylinder. A seal ring member is provided to the outer periphery of the piston to device the inside of the cylinder into a first chamber and a second chamber. A transmission member is connected to the piston and can transmit external force to the piston. A cutout section is formed with a predetermined circumferential width in a first stopper surface. A communication section has an opening in an annular outer peripheral section located closer to the second chamber than the cutout section. When the seal ring member is pressed toward the first stopper surface, the seal ring member is deformed so as to partially enter the cutout section.

Abstract: A trench gate semiconductor switching element is provided. The semiconductor substrate of this element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench; and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region, and in contact with the gate insulation layer on a lower side of the body region. The bottom region includes a low concentration region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench; and a high concentration region in contact with the gate insulation layer in a second range of the bottom surface adjacent to the first range.

Abstract: A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region. The bottom region includes a first bottom region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench and extending from the bottom surface to a first position; and a second bottom region in contact with the gate insulation layer in a second range adjacent to the first range and extending from the bottom surface to a second position lower than the first position.

Abstract: A server device that provides a plurality of client devices with a game obtains a first request from a first client device of a first user. Responsive to obtaining the first request, the server device outputs first identification information corresponding to the first user. The server device obtains a second request including the first identification information from a second client device of a second user. Responsive to obtaining the second request, the server device corrects second user information on the second user using correction data based on first user information on the first user. The server device causes the second client device to display at least part of the corrected second user information.

Abstract: A game may be provided which is capable of allowing a user to continuously play a game by allowing users to cooperate with each other on the basis of owned game media. A game program for running the game may include a game medium storage function, an extraction function, an extracted user storage function, a fluctuation determination function, a processing function, and a parameter value storage function. The processing function allows a parameter value of a corresponding game medium to automatically vary on the basis of a result of the determination by the fluctuation determination function.

Abstract: Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

Abstract: The bottom surface of the trench is provided so that a center part of the bottom surface protrudes upward with respect to a peripheral part of the bottom surface in a short direction. A thickness of the gate insulating film covering the peripheral part is thicker than a thickness of the gate insulating film covering the center part.

Abstract: Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

Abstract: A switching device may be provided with: a semiconductor substrate; a trench provided in an upper surface of the semiconductor substrate; a gate insulating layer covering an inner surface of the trench; and a gate electrode located in the trench. The semiconductor substrate includes: a first semiconductor region being in contact with the gate insulating layer; a body region being in contact with the gate insulating layer under the first semiconductor region; a second semiconductor region being in contact with the gate insulating layer under the body region; a bottom region being in contact with the gate insulating layer at a bottom surface of the trench; and a connection region being in contact with the gate insulating layer at a lateral surface of the trench and connecting the body region and the bottom region. The connection region is thicker than the bottom region.

Abstract: A technique achieving a higher voltage resistance by a depletion layer extending quickly within a circumferential region is provided. A semiconductor device includes an element region in which an insulated gate type switching element is provided and a circumferential region adjacent to the element region. First and second trenches are provided in the circumferential region. A front surface region of the second-conductivity-type is provided between the first and second trenches. First and second bottom surface regions of the second-conductivity-type are provided in bottom surface ranges of the first and second trenches. First and second side surface regions of the second-conductivity-type connecting the front surface region and the first or second bottom surface region is provided along side surfaces of the first and second trenches. Low area density regions are provided in at least parts of the first and second side surface regions.

Abstract: A hybrid vehicle includes a traveling mode determination module configured to determine a traveling mode at least one of an internal-combustion engine traveling mode for running by transmitting motive power produced by the internal-combustion engine to wheels of the vehicle and an electric motor traveling mode for running by transmitting motive power produced by the electric motor to the wheels of the vehicle. The traveling mode determination module prohibiting the internal-combustion engine traveling mode and causing the vehicle to run in the electric motor traveling mode when the amount of the remaining fuel in the fuel tank is less than or equal to a first predetermined amount.

Abstract: A switching device may be provided with: a semiconductor substrate; a trench provided in an upper surface of the semiconductor substrate; a gate insulating layer covering an inner surface of the trench; and a gate electrode located in the trench. The semiconductor substrate includes: a first semiconductor region being in contact with the gate insulating layer; a body region being in contact with the gate insulating layer under the first semiconductor region; a second semiconductor region being in contact with the gate insulating layer under the body region; a bottom region being in contact with the gate insulating layer at a bottom surface of the trench; and a connection region being in contact with the gate insulating layer at a lateral surface of the trench and connecting the body region and the bottom region. The connection region is thicker than the bottom region.

Abstract: A semiconductor device includes a semiconductor substrate. The element region of the semiconductor substrate includes a first body region having a first conductivity type, a first drift region having a second conductivity type, and a plurality of first floating regions, each the first floating regions having the first conductivity type. The termination region includes a second drift region having the second conductivity type, and a plurality of second floating regions, each of the second floating regions having the first conductivity type. The each of the second floating regions is surrounded by the second drift region. When a depth of a center of the first drift region is taken as a reference depth, at least one of the second floating regions is placed closer to the reference depth than each of the first floating regions.

Abstract: A semiconductor device may include a semiconductor substrate in which a semiconductor element is provided, and an insulation film provided on the semiconductor substrate, in which the semiconductor substrate may include a first portion and a second portion which has a thickness thinner than a thickness of the first portion, an upper surface of the second portion may be positioned lower than an upper surface of the first portion, a recess extending in a thickness direction of the semiconductor substrate may be provided on the upper surface of the second portion located at a position where the first portion and the second portion adjoin to each other, and the insulation film may extend over from the first portion to the second portion, and fill the recess.