Abstract: A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.

Abstract: There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.

Abstract: Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.

Abstract: A surface-emitting semiconductor laser includes a substrate; a first semiconductor multilayer film reflector stacked on the substrate; an active region stacked on or above the first semiconductor multilayer film reflector; a second semiconductor multilayer film reflector stacked on or above the active layer; a cavity extension region interposed between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active region; and a carrier block layer interposed between the cavity extension region and the active region. The carrier block layer includes a first carrier block layer and a second carrier block layer. The first and second carrier block layers have a larger band gap than the active region and the cavity extension region. The first carrier block layer has a larger band gap than the second carrier block layer.

Abstract: A radiation image converting panel includes a flexible support, a photostimulable phosphor layer provided on the main surface of the support and made of a plurality of columnar crystals, a first protective film provided on the photostimulable phosphor layer, and a second protective film provided on the first protective film, the photostimulable phosphor layer is composed of a photostimulable phosphor including Eu-doped CsBr, the first protective film is provided so as to cover the upper surface and side surface of the photostimulable phosphor layer and fill a gap of the plurality of columnar crystals in the photostimulable phosphor layer, the pencil hardness of the second protective film is not more than the pencil hardness of the first protective film, and the radiation image converting panel has a flexibility of up to a bending radius of 15 mm.

Abstract: Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.

Abstract: A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.

Abstract: Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector.

Abstract: A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.

Abstract: A radiation image converting panel includes a support, a photostimulable phosphor layer provided on the front surface of the support and made of a plurality of columnar crystals, and a first excitation light absorbing layer provided on the photostimulable phosphor layer, each of the plurality of columnar crystals has a helical structure portion formed by stacking in a helical shape at the side close to the support and a columnar portion formed by extending from the helical structure portion toward the first excitation light absorbing layer, and the photostimulable phosphor layer accumulates incident radiation, and as a result of being irradiated with excitation light via the first excitation light absorbing layer, outputs light according to the accumulated radiation via the first excitation light absorbing layer.

Abstract: A radiation image converting panel includes a flexible support, a photostimulable phosphor layer provided on the main surface of the support and made of a plurality of columnar crystals, a first protective film provided on the photostimulable phosphor layer, and a second protective film provided on the first protective film, the photostimulable phosphor layer is composed of a photostimulable phosphor including Eu-doped CsBr, the first protective film is provided so as to cover the upper surface and side surface of the photostimulable phosphor layer and fill a gap of the plurality of columnar crystals in the photostimulable phosphor layer, the pencil hardness of the second protective film is not more than the pencil hardness of the first protective film, and the radiation image converting panel has a flexibility of up to a bending radius of 15 mm.

Abstract: A trehalose compound having high immunopotentiating activity and low toxicity is represented by formula (1). (In the formula, X and X? each represents a phenyl, a naphthyl, R1—CHR1— (wherein R1 and R2 each represents a C7-C21 alkyl group or the like) or the like; and n and n? each independently represents an integer of 0-3). The compound exhibits a high activating effect on macrophages and neutrophils.

Abstract: A trehalose compound having high immunopotentiating activity and low toxicity is represented by formula (1). (In the formula, X and X? each represents a phenyl, a naphthyl, R1—CHR1— (wherein R1 and R2 each represents a C7-C21 alkyl group or the like) or the like; and n and n? each independently represents an integer of 0-3). The compound exhibits a high activating effect on macrophages and neutrophils.

Abstract: A communication system includes a first base station for communicating complying with a first communication protocol, a second base station for communicating by using radio frames complying with a second communication protocol and transmitting synchronization signals complying with the first communication protocol, the synchronization signals synchronizing the transmitted radio frames, and a mobile terminal for communicating according to the process includes: receiving the synchronization signals from the second base station while communicating with the first base station, estimating transmitting timing of the radio frames including symbols on the basis of the received synchronization signals, measuring a receiving signal strength of the symbol on the basis of the estimated timing, and controlling a handover from the first base station to the second base station on the basis of the measurement result by the measurement of the receiving signal strength of the symbol.

Abstract: An object of the invention is to provide a novel sphingosine compound with an inhibitory activity against sphingomyelinase, and a method for producing the sphingosine compound. The novel sphingosine compound or a salt thereof according to the invention is represented by Formula (1): wherein one of R1 and R2 is hydrogen, and the other is a group represented by Formula (G): wherein n is 0 or 1; and R3 is hydrogen, C1-23 alkyl, C3-8 cycloalkyl, C2-6 alkenyl, C1-6 alkoxy, C3-8 cycloalkyloxy, phenyl, or furil.

Abstract: Disclosed is a promoter which enables the expression of a gene product in a large quantity in Bacillus subtilis. Also disclosed is a method for producing a gene product using the promoter. Specifically disclosed are: a nucleic acid molecule which contains a promoter region derived from a toxin gene of a bacterium belonging to the genus Clostridium and can enhance the expression of a heterologous gene operably linked to the nucleic acid molecule; a nucleic acid construct which contains the nucleic acid molecule and the heterologous gene; a vector carrying the nucleic acid construct; a host cell which is transformed with the vector; and a method and a kit for producing an expression product of the heterologous gene using the nucleic acid molecule, the nucleic acid construct, the vector or the host cell.

Abstract: A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate.

Abstract: A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

Abstract: A trehalose compound having high immunopotentiating activity and low toxicity is represented by formula (1). (In the formula, X and X? each represents a phenyl, a naphthyl, R1—CHR1— (wherein R1 and R2 each represents a C7-C21 alkyl group or the like) or the like; and n and n? each independently represents an integer of 0-3). The compound exhibits a high activating effect on macrophages and neutrophils.

Abstract: A radiation image converting panel has a structure capable of arbitrarily controlling a change in luminance distribution of an entire panel surface after formation of a moisture-resistant protective film. The radiation image converting panel comprises a radiation converting film doped with Eu and covered with a moisture-resistant protective film. The Eu concentration in the radiation converting film is preliminarily adjusted such that the Eu concentration at a central portion or peripheral portion of the film falls within an optimal range, and the other film portion is provided with a positive or negative concentration gradient such that the Eu concentration thereof gradually become higher or lower than the optimal range. The luminance distribution of the entire panel in which the moisture-resistant protective film has been formed can be controlled by providing the Eu concentration to be added with a concentration gradient.