Abstract: An object detecting device includes a feature extracting circuit configured to extract first feature data from an input image; a feature transforming circuit configured to transform the first feature data into transformed feature data according to a transformation function; and a decoder circuit configured to decode the transformed feature data into a region map indicating a detected object.

Abstract: An edge detecting device includes a feature extracting circuit configured to extract first and second feature data from an input image; a prototype generating circuit configured to generate prototype data using the first feature data and an input label, the prototype data including foreground and background information of an object; a region detecting circuit configured to generate a segmentation mask by detecting a region of an object using the first feature data and the prototype data; and an edge extracting circuit configured to generate an edge map by combining the segmentation mask and the second feature data.

Abstract: A data processing method by learning of a neural network may be provided. The data processing method by the learning of a neural network includes: obtaining a first set of output values by processing a first set of input values of a task by the neural network; forming a projection space on the basis of the first set of output values; obtaining a second set of output values by processing a second set of input values out of input values of the task by the neural network; projecting the second set of output values onto the projection space; and performing processing the second set of output values in the projection space.

Abstract: An object detecting device includes a feature extracting circuit configured to extract first feature data from an input image; a feature transforming circuit configured to transform the first feature data into transformed feature data according to a transformation function; and a decoder circuit configured to decode the transformed feature data into a region map indicating a detected object.

Abstract: An edge detecting device includes a feature extracting circuit configured to extract first and second feature data from an input image; a prototype generating circuit configured to generate prototype data using the first feature data and an input label, the prototype data including foreground and background information of an object; a region detecting circuit configured to generate a segmentation mask by detecting a region of an object using the first feature data and the prototype data; and an edge extracting circuit configured to generate an edge map by combining the segmentation mask and the second feature data.

Abstract: A data processing method by learning of a neural network may be provided. The data processing method by the learning of a neural network includes: obtaining a first set of output values by processing a first set of input values of a task by the neural network; forming a projection space on the basis of the first set of output values; obtaining a second set of output values by processing a second set of input values out of input values of the task by the neural network; projecting the second set of output values onto the projection space; and performing processing the second set of output values in the projection space.

Abstract: A manufacturing method for a thin film transistor array panel includes: providing a gate line including a gate electrode, on a substrate; providing a gate insulating layer covering the gate line; providing a semiconductor material layer on the gate insulating layer; providing a data wire material layer on the semiconductor material layer; providing a first photosensitive film pattern on the data wire material layer; etching the data wire material layer by using the first photosensitive film pattern as a mask; providing a second photosensitive film pattern by etching back the first photosensitive film pattern; etching the semiconductor material layer by using the second photosensitive film pattern as a mask; and etching the data wire material layer by using the second photosensitive film pattern as a mask to form a source electrode and a drain electrode. The etching the semiconductor material layer uses a first non-sulfur fluorinated gas.

Abstract: A manufacturing method for a thin film transistor array panel includes: providing a gate line including a gate electrode, on a substrate; providing a gate insulating layer covering the gate line; providing a semiconductor material layer on the gate insulating layer; providing a data wire material layer on the semiconductor material layer; providing a first photosensitive film pattern on the data wire material layer; etching the data wire material layer by using the first photosensitive film pattern as a mask; providing a second photosensitive film pattern by etching back the first photosensitive film pattern; etching the semiconductor material layer by using the second photosensitive film pattern as a mask; and etching the data wire material layer by using the second photosensitive film pattern as a mask to form a source electrode and a drain electrode. The etching the semiconductor material layer uses a first non-sulfur fluorinated gas.

Abstract: A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.

Abstract: Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.

Abstract: A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: A plasma device includes: a reaction chamber; an upper electrode positioned upward in the reaction chamber; a lower electrode facing the upper electrode; a baffle plate enclosing the lower electrode and including a plurality of cutouts formed at the edge thereof, wherein a boundary line of the cutout is connected to a boundary line of the baffle plate, thereby forming a recess portion at the edge of the baffle plate. The cutouts of the baffle plate change the flow of the reactive gas in the chamber, helping achieve a more uniform etch.

Abstract: A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.

Abstract: Methods of forming patterns in semiconductor devices are provided including forming first patterns spaced apart from one another on an object structure. A first sacrificial layer is formed conformally on the first patterns and the object structure. A second pattern is formed on a sidewall of the first sacrificial layer, the second pattern having a height smaller than that of the first pattern from an upper surface of the object structure. The first patterns are selectively removed to form an opening that exposes the object structure. A third pattern is formed on a sidewall of the opening.

Abstract: A semiconductor device having a bar type active pattern and a method of manufacturing the same are provided. The semiconductor device may include a semiconductor substrate having a semiconductor fin configured to protrude from a surface of the semiconductor substrate in a first direction, the semiconductor substrate having a first width and a second width crossing the first width, wherein the first width and the second width extend in a second direction. A plurality of active patterns may be arranged in the first direction with a separation gap from the semiconductor fin. A plurality of support patterns may be arranged between the semiconductor fin and one of the plurality of active patterns arranged closer to the semiconductor fin in the first direction, and between the plurality of active patterns arranged in the first direction to support the plurality of active patterns.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.

Abstract: Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.