Abstract: A multi stack packaging chip and a method of manufacturing the chip are provided. The method includes forming at least one second circuit element on a first wafer; forming a second wafer having a cavity and a one third circuit element formed opposite to the cavity; forming a solder on the second wafer; and combining the second wafer with the first wafer so that the second circuit element and the cavity correspond. The chip includes a flip-chip packaged chip in which a first circuit element is packaged using a first wafer; a second circuit element formed on the first wafer; a second wafer having a cavity and combined with the first wafer so that the cavity and the second circuit element correspond; a third circuit element formed on the second wafer; and a solder formed on the second wafer, the solder electrically coupling the second wafer to a packaging substrate.

Abstract: An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

Abstract: A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.

Abstract: A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

Abstract: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

Abstract: A wafer level package for a surface acoustic wave device and a fabrication method thereof include a SAW device formed with a SAW element on an upper surface of a device wafer; a cap wafer joined on an upper part of the SAW element; a cavity part housing the SAW element between the cap wafer and the SAW device; a cap pad formed on an upper surface of the cap wafer; and a metal line formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.

Abstract: A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

Abstract: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

Abstract: An inductor embedded in a substrate, including a substrate, a coil electrode formed by filling a metal in a spiral hole formed on the substrate, an insulation layer formed on the substrate, and an external connection pad formed on the insulation layer to be connected to the coil electrode. The inductor-embedded substrate can be used as a cap for a micro device package by forming a cavity on its bottom surface.

Abstract: A cap for a semiconductor device package, including a body formed at a predetermined thickness with a cavity. The cap further includes a first seed layer formed on an inner circumference of a first via hole formed at a predetermined depth from the cavity formation surface of the body, a second seed layer formed on an inner circumference of a second via hole formed at a predetermined depth from the opposite surface to the cavity formation surface of the body, and plating materials filled in the first via hole and the second via hole.

Abstract: A packaging chip in which a circuit module is packaged and a method of packaging a circuit module are provided. The packaging chip includes a base wafer; a circuit module on the base wafer; a packaging wafer having a cavity and combined with the base wafer so that the circuit module fits inside the cavity; a connecting electrode connecting upper and lower surfaces of the cavity; and a seed layer between the connecting electrode and the packaging wafer. The method includes etching a lower surface of the packaging wafer to form a cavity, stacking a metal layer in an area of the lower surface, combining the base wafer with the packaging wafer, polishing the packaging wafer, forming a viahole through the packaging wafer, stacking a seed layer on the packaging wafer, plating the inside of the viahole, removing the seed layer and forming an electrode.

Abstract: A multi stack packaging chip and a method of manufacturing the chip are provided. The method includes forming at least one second circuit element on a first wafer; forming a second wafer having a cavity and a one third circuit element formed opposite to the cavity; forming a solder on the second wafer; and combining the second wafer with the first wafer so that the second circuit element and the cavity correspond. The chip includes a flip-chip packaged chip in which a first circuit element is packaged using a first wafer; a second circuit element formed on the first wafer; a second wafer having a cavity and combined with the first wafer so that the cavity and the second circuit element correspond; a third circuit element formed on the second wafer; and a solder formed on the second wafer, the solder electrically coupling the second wafer to a packaging substrate.

Abstract: A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.

Abstract: A method for manufacturing a magnetic field detecting element having a soft magnetic core formed on a substrate, first and second coils, each having coil lines, arranged above and below the core, the method including forming a seed film on the substrate, removing a portion of the seed film using a predetermined pattern so that coil lines constituting the first coil subsequently formed on the seed film are separated, forming a first plating mold having grooves corresponding to the predetermined pattern on an upper portion of the seed film, forming coil lines constituting the first coil by filling the grooves of the first plating mold with metal, forming the soft magnetic core and the second coil on an upper portion of the substrate and on the seed film where the first coil is formed, and cutting off edges of the substrate so that the separated coil lines are insulated.

Abstract: A method for manufacturing a magnetic field detecting element having a soft magnetic core formed on a substrate, first and second coils, each having coil lines, arranged above and below the core, the method including forming a seed film on the substrate, removing a portion of the seed film using a predetermined pattern so that coil lines constituting the first coil subsequently formed on the seed film are separated, forming a first plating mold having grooves corresponding to the predetermined pattern on an upper portion of the seed film, forming coil lines constituting the first coil by filling the grooves of the first plating mold with metal, forming the soft magnetic core and the second coil on an upper portion of the substrate and on the seed film where the first coil is formed, and cutting off edges of the substrate so that the separated coil lines are insulated.

Abstract: A fabrication method of a packaging substrate includes the steps of: forming a recess by etching a predetermined area of a lower surface of a substrate; depositing a seed layer on an upper surface of the substrate; in the recess, etching predetermined area(s) of the lower surface of the substrate and forming at least one via hole that reaches the seed layer; and plating the inside of the via hole by using the seed layer, and forming electrode(s) for electrically coupling the upper and lower parts of the substrate. First and second pads coupled to the electrode(s) may be formed on the upper and lower parts of the substrate, respectively. Thus, using the second pads as bonding materials, the packaging process becomes easier, which resultantly simplifies the fabrication process of the packaging substrate and the packaging process.

Abstract: A cap wafer including a cavity, a packaged semiconductor including the cap wafer, and a method of fabricating the cap wafer. The cap wafer includes a cavity formed in an area of a lower surface of the cap wafer; and at least one feed-through penetrating through upper and lower surfaces of the cap wafer so as to be connected to the cavity. The packaged semiconductor includes a base wafer including an upper surface including an area in which a circuit device is formed; a cap wafer including a lower surface including an area in which a cavity having a predetermined size is formed, the cap wafer being combined with the base wafer to position the circuit device in the cavity so as to package the circuit device; and at least one feed-through penetrating through upper and lower portions of the cap wafer so as to be connected to the cavity and electrically connected to the circuit device.

Abstract: An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

Abstract: A high-integrated duplexer and a fabrication method thereof. The duplexer has a first filter to pass a signal of a transmitted frequency band, a second filter to pass a signal of a received frequency band, an embedded PCB having the first and second filters bonded on a certain area of a surface of an upper side in a predetermined distance from each other, and an isolation part to prevent a signal interference between the first and second filters, and a packaging substrate to package the entire upper side of the embedded PCB so that the packaging substrate is located above and separated from the first and second filters by a predetermined distance. The fabricated high-integrated duplexer has a small size and high performance.

Abstract: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.