Abstract: A capacitor-less semiconductor memory device and a method for fabricating the same are provided. The semiconductor memory device includes a first metal-oxide semiconductor film, a second metal-oxide semiconductor film spaced apart from the first metal-oxide semiconductor film, a first gate electrode intersecting the first metal-oxide semiconductor film and the second metal-oxide semiconductor film, a first gate dielectric film interposed between the first metal-oxide semiconductor film and the first gate electrode, a charge storage film in the first gate dielectric film, the charge storage film extending along at least a portion of the first metal-oxide semiconductor film and connected to the second metal-oxide semiconductor film, a second gate electrode spaced apart from the first gate electrode and intersecting the second metal-oxide semiconductor film, and a second gate dielectric film interposed between the second metal-oxide semiconductor film and the second gate electrode.

Abstract: An apparatus for predicting a trajectory of a surrounding vehicle includes a storage configured to store a high definition map, a lane Selection Network (LSN), and a Trajectory Prediction Network (TPN) and a controller that extracts lane information around a target vehicle, traveling around a host vehicle, based on the high definition map, inputs the lane information around the target vehicle and previous trajectory information of the target vehicle to the LSN to detect reference lane information, and inputs the reference lane information and the previous trajectory information of the target vehicle to the TPN to acquire future trajectory information of the target vehicle.

Abstract: Semiconductor memory devices including capacitors and methods for manufacturing thereof. The semiconductor memory device may include a substrate, an element isolation pattern defining an active area in the substrate, a first conductive pattern on the substrate and the element isolation pattern, and extending in a first direction, wherein the first conductive pattern is connected to a first portion of the active area, a capacitor structure on the substrate and the element isolation pattern and connected to a second portion of the active area, a gate trench defined in the substrate and the element isolation pattern and extending in a second direction, wherein a first trench width of a portion of the gate trench in the active area is greater than a second trench width of a portion of the gate trench in the element isolation pattern.

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula M-2; and a solvent.

Abstract: A semiconductor device is provided.

Abstract: A resin polymerization reaction device comprises a reactor in which a resin is accommodated and a resin polymerization reaction is performed; a stirring part installed inside the reactor to agitate the resin; and a discharge port located at the lower portion of the reactor and provided with a plurality of discharge openings having an opening diameter within a range of 3/80 to 10/80 of the diameter of the discharge port.

Abstract: Provided is a welding apparatus having a fume elimination function. The welding apparatus efficiently eliminates fume generated while a welding object is being welded using a laser.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: An apparatus for controlling autonomous driving includes: a processor to determine a travelling situation and a lane position, and determine an autonomous driving control maneuver of a vehicle depending on the determination result, and a non-transitory storage medium to store a result calculated by the processor and a set of instructions executed by the processor. The processor determines a safety of each lane of a road on which the vehicle is travelling to control the vehicle to stop on a lane representing a highest safety, after starting a minimum risk maneuver of the autonomous driving control maneuver.

Abstract: A traffic light determining apparatus, a system including the same, and a method thereof, includes: a processor configured to obtain traffic light status information of an intersection while a vehicle is driven, and when obtaining the traffic light status information is not possible, configured to estimate the traffic light status information according to surrounding vehicle information or pedestrian information; and a storage configured to store data and algorithms driven by the processor.

Abstract: A semiconductor device and a method for fabricating the same is provided. The semiconductor device includes a lower semiconductor film, a buried insulating film, and an upper semiconductor film which are sequentially stacked; an element isolation film defining an active region inside the substrate and including a material having an etching selectivity with respect to silicon oxide; a first gate trench inside the upper semiconductor film; a first gate electrode filing a part of the first gate trench; a second gate trench inside the element isolation film; and a second gate electrode filling a part of the second gate trench, a bottom side of the element isolation film being inside the lower semiconductor film.

Abstract: A method for forming photoresist patterns and a semiconductor device on which a photoresist pattern manufactured according to the method is formed are disclosed. The method includes forming a preliminary photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer, the acrylic polymer including a structural unit containing a hydroxy group and a fluorine, and an acid compound on the preliminary photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an acetate-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition.

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; at least one acid compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.

Abstract: An autonomous driving controller includes: a processor to collect driving data when a vehicle is traveling and calculate a steering override reference value, which is a criterion of determining an override mode, based on the collected driving data; and a storage to store the collected driving data and a set of instructions executed by the processor to calculate the steering override reference value. In particular, the processor controls autonomous driving by varying the steering override reference value based on the collected driving data or information regarding a driver of the vehicle.

Abstract: A sandwich panel floor modular structure includes a sandwich panel configured to be fixed on a floor panel of a vehicle, a center rail embedded in the sandwich panel and configured to guide a console to move in a longitudinal direction of the vehicle, and seat rails embedded in the sandwich panel and spaced apart from both sides of the center rail, the seat rails configured to guide a seat to move in the longitudinal direction of the vehicle.