Abstract: An apparatus and method for controlling a vehicle speed based on information about forward vehicles that travel in the same lane may be acquired using Vehicle to Everything (V2X) communications in a cooperative adaptive cruise control (CACC) system. The CACC system includes a communication unit receiving vehicle information from neighboring vehicles using V2V communications; an information collection unit collecting vehicle information of the neighboring vehicles and the subject vehicle using sensors; and a control unit determining a forward vehicle and a far-forward vehicle using the sensors, selecting first and second target vehicles for being followed by the subject vehicle based on the vehicle information of the forward vehicle and the far-forward vehicle and the vehicle information of the neighboring vehicles, and controlling the driving speed of the subject vehicle based on speed information of the first and second target vehicles.

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, and a molding member that surrounds the at least one semiconductor chip. The molding member includes fillers. Each of the fillers includes a core and a coating layer that surrounds the core. The core includes a non-electromagnetic material and the coating layer includes an electromagnetic material. The molding member includes regions respectively have different distributions of the fillers.

Abstract: An apparatus for controlling autonomous driving includes: a processor to determine a travelling situation and a lane position, and determine an autonomous driving control maneuver of a vehicle depending on the determination result, and a non-transitory storage medium to store a result calculated by the processor and a set of instructions executed by the processor. The processor determines a safety of each lane of a road on which the vehicle is travelling to control the vehicle to stop on a lane representing a highest safety, after starting a minimum risk maneuver of the autonomous driving control maneuver.

Abstract: An apparatus for providing a safety strategy in a vehicle is provided. The apparatus includes a sensor configured to sense information about an external object and a control circuit configured to be electrically connected with the sensor. The control circuit is configured to initiate a minimum risk strategy (MRM), when a predetermined condition is met, to determine a lateral location of the vehicle based on information obtained by the sensor and a location of a driving lane of the vehicle on a road, and to move the vehicle to the determined lateral location while executing the MRM.

Abstract: A lane change controller, a system including the same, and a method thereof are provided. The lane change controller includes a processor configured to determine whether it is possible for a vehicle to perform a lane change depending on a road condition, based on information about surrounding circumstances, a storage storing the result of determining whether it is possible to perform the lane change, the result being determined by the processor, and a display device configured to display the result of determining whether it is possible to perform the lane change.

Abstract: A polarizing plate and a display device including the same. The polarizing plate includes a retardation layer exhibiting ultraviolet blocking characteristics even in a state where the retardation layer does not include any ultraviolet absorber or light stabilizer. The polarizing plate can be used alone or in combination with an appropriate sunscreen or a light stabilizer as needed to selectively block ultraviolet rays in a region requiring blocking, without affecting display performance, such as color senses and image quality, of a display device. The polarizing plate can also be formed with a small thickness without requiring a separate ultraviolet blocking layer, and also has excellent durability, because the polarizing plate exhibits a certain ultraviolet blocking property even in the absence of an ultraviolet absorber or light stabilizer.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.

Abstract: Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.

Abstract: A communication receiving device is provided. The communication receiving device includes a cross-correlation measuring circuit which receives an L-SIG (Legacy signal) symbol and a RL-SIG symbol to measure a cross-correlation degree therebetween, an accumulating circuit which accumulates a real part of a cross-correlation degree measurement value, a comparator which compares the accumulated L-SIG symbol and the RL-SIG symbol with a variable threshold value, and a threshold value calculator for calculating the threshold value.

Abstract: A lane change controller, a system including the same, and a method thereof are provided. The lane change controller includes a processor configured to determine whether it is possible for a vehicle to perform a lane change depending on a road condition, based on information about surrounding circumstances, a storage storing the result of determining whether it is possible to perform the lane change, the result being determined by the processor, and a display device configured to display the result of determining whether it is possible to perform the lane change.

Abstract: A lane change controller, a system including the same, and a method thereof are provided. The lane change controller includes a processor configured to determine whether it is possible for a vehicle to perform a lane change depending on a road condition, based on information about surrounding circumstances, a storage storing the result of determining whether it is possible to perform the lane change, the result being determined by the processor, and a display device configured to display the result of determining whether it is possible to perform the lane change.

Abstract: A sandwich panel floor modular structure includes a sandwich panel configured to be fixed on a floor panel of a vehicle, a center rail embedded in the sandwich panel and configured to guide a console to move in a longitudinal direction of the vehicle, and seat rails embedded in the sandwich panel and spaced apart from both sides of the center rail, the seat rails configured to guide a seat to move in the longitudinal direction of the vehicle.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A vehicle may include a camera for capturing a region around the vehicle, a positioning sensor for measuring a position of the vehicle, a database for storing a precise map, and a learning data generating apparatus for generating data for learning based on the captured region, the position of the vehicle, and the precise map.

Abstract: An apparatus for removing foreign substances in a container includes a conveying device for conveying a container having an opening portion, and a first nozzle for ejecting a gas toward the opening portion of the container, in which the first nozzle is disposed to be spaced apart from an imaginary vertical surface that runs through a center of the container, towards a first side, at a first spacing distance.

Abstract: An autonomous driving controller includes: a processor to collect driving data when a vehicle is traveling and calculate a steering override reference value, which is a criterion of determining an override mode, based on the collected driving data; and a storage to store the collected driving data and a set of instructions executed by the processor to calculate the steering override reference value. In particular, the processor controls autonomous driving by varying the steering override reference value based on the collected driving data or information regarding a driver of the vehicle.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: An apparatus for controlling a lane change in a vehicle includes a navigation module for guiding a user along a path from a starting point to a destination point, a GPS module, a memory, a first sensor, a second sensor, and a processor for being electrically connected with the navigation module, the GPS module, the memory, the first sensor, and the second sensor. The processor determines whether it is possible to control a lane change to a target lane in the path based on a length of a diverging lane in a diverging section or a length of a merging lane in a merging section in the diverging section or the merging section included in the path, controls the lane change to the target lane, and controls the vehicle to travel along a lane link connected with the target lane.

Abstract: An apparatus for providing map information for determining a driving situation of a vehicle includes a processor configured to update a position of an own vehicle to a detailed map including lane information, configure a valid detailed map by selecting an effective region around the position of the own vehicle on the basis of the position of the own vehicle on the detailed map, and generate a road model according to a requested type of a vehicle device which has requested providing of map information, using the valid detailed map.

Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.