Abstract: An apparatus for controlling autonomous navigation includes: a map data reception unit configured to receive parking lot map data indicating that a plurality of virtual lanes are located in a driving road in a parking lot and a grid point is located in each virtual lane by a certain interval from a parking server; and a controller configured to control driving of an autonomous vehicle based on a weight of each grid point included in the parking lot map data.

Abstract: An apparatus for controlling parking of a vehicle includes a destination setter for setting a destination required by a user and setting search information on a parking space in a vicinity of the set destination, a controller for registering information on the empty parking space in the vicinity of the destination received from the outside when the vehicle arrives in a defined distance from the point set to the destination, and a parking guider for performing parking guidance so that the registered empty parking space becomes a final destination.

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract: Disclosed is a centrifugal separation device for removing air bubbles from materials filled into syringes, the device including: a centrifugal separator having a round body, a sealing cover sealably mounted on top of the body, a rotary shaft and a rotary body rotated by the operation of a motor, mounting members coupled to hinge shafts formed on the four faces of the rotary body, the syringes mounted on the mounting members through respective stands, a vacuum pipe and a vacuum releasing pipe connected on the underside of the body, and a vacuum sensor mounted at the inside of the vacuum pipe; a vacuum driving part adapted to absorb the air from the interior of the body through the vacuum pipe to reduce the internal pressure of the body to a given pressure; a sensing part adapted to input the pressure value detected from the vacuum sensor to a controller; a motor driving part adapted to drive the motor to rotate the rotary shaft; and the controller adapted to operate the centrifugal separator, to constantly mai

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract: Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.

Abstract: In a method of manufacturing a semiconductor device, a trench is formed by removing an upper portion of a substrate. A gate insulation layer pattern is formed on an inner wall of the trench. A gate electrode is formed on the gate insulation layer pattern. The gate electrode fills a lower portion of the trench. A capping layer is formed on the gate electrode and the gate insulation layer pattern. The capping layer is partially oxidized to form a first capping layer pattern and a second capping layer pattern. The first capping layer pattern is not oxidized, and the second capping layer pattern is oxidized. A third capping layer pattern is formed on the second capping layer pattern, the third capping layer pattern filling an upper portion of the trench.

Abstract: Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back gate between adjacent transistors, and a carrier storage layer configured to surround the back gate and to trap a carrier. A threshold voltage of a transistor may be changed in response to voltage applied to the back gate. Related fabrication methods are also described.

Abstract: An insulation sleeve including a protrusion formed on a sidewall of the cup which is caught by a finger of a user's hand is provided, in which, in a case where the cup is filled with a hot content, the user can easily and safely grip the cup, without slippage, at movement with the cup. The insulation sleeve includes a sleeve body having a hollow portion which is formed when a force is applied both corners of the folded sleeve body so as to accommodate and support the cup therein; and a pair of protrusions formed by a -shaped, ?-shaped, ?-shaped or L-shaped cut line provided on the sleeve body, and protruding from the sleeve body in an outward direction when the hollow portion is provided, so that the protrusions are caught by a an upper portion of a finger of a hand gripping the sleeve body.

Abstract: Disclosed are a novel 8-hydroxyquinoline acetamide compound, an 8-hydroxyquinoline thioamide and use thereof. More specifically, disclosed are a novel 8-hydroxyquinoline thioamide compound suitable for use as a selective chemodosimeter that shows considerably high detection sensitivity to mercury ions, an 8-hydroxyquinoline acetamide compound as an intermediate thereof, preparation thereof, and a chemodosimeter for mercury ion-selective detection, the chemodosimeter comprising the 8-hydroxyquinoline thioamide compound. The compounds as disclosed herein exhibit considerably effective fluorescence specificity of an off-on type, detect a micromole of mercury ions from chemical and biological aqueous systems, and allow 100% desulfurization within 5 minutes, thus being considerably useful in the chemical industry.

Abstract: Disclosed are a novel 8-hydroxyquinoline acetamide compound, an 8-hydroxyquinoline thioamide and use thereof. More specifically, disclosed are a novel 8-hydroxyquinoline thioamide compound suitable for use as a selective chemodosimeter that shows considerably high detection sensitivity to mercury ions, an 8-hydroxyquinoline acetamide compound as an intermediate thereof, preparation thereof, and a chemodosimeter for mercury ion-selective detection, the chemodosimeter comprising the 8-hydroxyquinoline thioamide compound. The compounds as disclosed herein exhibit considerably effective fluorescence specificity of an off-on type, detect a micromole of mercury ions from chemical and biological aqueous systems, and allow 100% desulfurization within 5 minutes, thus being considerably useful in the chemical industry.

Abstract: Disclosed are a novel 8-hydroxyquinoline acetamide compound, an 8-hydroxyquinoline thioamide and use thereof. More specifically, disclosed are a novel 8-hydroxyquinoline thioamide compound suitable for use as a selective chemodosimeter that shows considerably high detection sensitivity to mercury ions, an 8-hydroxyquinoline acetamide compound as an intermediate thereof, preparation thereof, and a chemodosimeter for mercury ion-selective detection, the chemodosimeter comprising the 8-hydroxyquinoline thioamide compound. The compounds as disclosed herein exhibit considerably effective fluorescence specificity of an off-on type, detect a micromole of mercury ions from chemical and biological aqueous systems, and allow 100% desulfurization within 5 minutes, thus being considerably useful in the chemical industry.

Abstract: A mercury selective fluorescent chemosensor for detecting mercury ions by a compound represented by formula 1 and a novel fluorescent sensitive compound prepared by introducing two aminopyrene functions as a fluorescent sensitive moiety into a binding site of the compound of formula 1 is used for selectively detecting mercury ions are provided. The mercury selective fluorescent sensitive chemosensor is a switch type chemosensor having ON-OFF-type Hg2+-selective fluorescence quenching behavior and is not affected by other coexistent metal ions. Changes in fluorescence of the compounds of formula 1 were analyzed by ratiometric approach using monomer and excimer emissions of the pyrene fluorophore to selectively signal the concentration of mercury ions. The chemosensor can detect mercury ions in a micromolar unit even in a solution including an excess of water. Accordingly, the mercury selective fluorescent chemosensor for detecting mercury ions can be used effectively in environmental and medical applications.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Abstract: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

Abstract: A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.

Abstract: A mercury selective fluorescent chemosensor for detecting mercury ions (Hg2+) by a compound represented by formula 1 is provided. A novel fluorescent sensitive compound prepared by introducing two aminopyrene functions as a fluorescent sensitive moiety into a binding site of the compound represented by the formula 1, is used for selectively detecting mercury ions (Hg2+) is also provided. The mercury selective fluorescent sensitive chemosensor is a switch type chemosensor having ON-OFF-type Hg2+-selective fluorescence quenching behavior and is not affected by other coexistent metal ions. The changes in fluorescence of the compounds represented by formula 1 were analyzed by ratiometric approach using monomer and excimer emissions of the pyrene fluorophore to selectively signal the concentration of mercury ions (Hg2+). The chemosensor can detect mercury ions in a micromolar unit even in a solution including an excess of water.

Abstract: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided.