Abstract: A Bi-Pb-Sr-Ca-Cu-O system superconductor having a composition ofBi.sub.n Pb.sub.m Sr.sub.x Ca.sub.y Cu.sub.2 O.sub..delta.wherein n is a number from 0.76 to 1.05, m is a number from 0.01 to 0.20, x is a number from 0.85 to 1.35 and y is a number larger than 1.00 and not larger than 1.35; or n is a number larger than 1.06 and not larger than 1.15, m is a number from 0.12 to 0.25, x is a number from 1.20 to 1.35 and y is a number from 1.20 to 1.30; or n is a number larger than 0.75 and not larger than 1.15, m is a number from 0.25 to 0.35, x is a number from 1.20 to 1.35 and y is a number from 1.20 to 1.35, when they are normalized with the Cu mole number of 2, which has t.sub.c of at least 110 K.

Abstract: A Bi-Pb-Sr-Ba-Ca-Cu-O system superconductor having a composition of:Bi.sub.l Pb.sub.m Sr.sub.p Ba.sub.q Ca.sub.y Cu.sub.z O.sub.xwherein l, m, p, q, y and z satisfy the following inequalities:0.50<l<1.500.01.ltoreq.m.ltoreq.0.600.70.ltoreq.p.ltoreq.1.600.005.ltoreq.q.ltoreq.0.800.70.ltoreq.y.ltoreq.1.601.40.ltoreq.z.ltoreq.3.00which has the critical temperature of at least 77 K, and contains the high T.sub.c phase in a high fraction.

Abstract: A machine translation system for automatically effecting translation from Japanese the source language into another or target language. Conventional translation systems entail problems, e.g., the reduction in processing efficiency owing to the need for an additional step such as pre-editing prior to translation.

Abstract: High-purity 1,1,3,3-tetramethylbutyl hydroperoxide can be easily and safely produced without the formation of dangerous acetone peroxide, by the reaction of neopentyldimethylcarbinol with hydrogen peroxide in the presence of sulfuric acid.

Abstract: A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.

Abstract: An optical memory comprising a doping modulated multilayer made of amorphous semiconductor, and at least two electrodes, one of the electrodes being transparent and the multilayer being sandwiched between two electrodes. Data is written by increasing the electrical conductance of the amorphous semiconductor by irradiating it with light. Data is erased by the application of a bias voltage to the electrodes and also by irradiating the amorphous semiconductor with light having photon energy of approximately half or less of the optical energy band gap of the amorphous semiconductor. The memory effect can be maintained for a week or longer, and the memory can be erased without heating the memory device, whereby the lifetime of the device is lengthened.

Abstract: A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 .ANG. to 200 .ANG..The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.

Abstract: A process for producing an internal-oxidized alloy, which comprises allowing a plasma generated in the presence of oxygen, a gas of an oxygen atom-containing compound or a mixture of oxygen and a gas of an oxygen atom-containing compound to act on an alloy consisting of at least two metal elements, thereby selectively oxidizing at least one metal element other than the matrix metal in said alloy. Particles of the internal-oxidized alloy thus obtained can, if necessary, be molded into a desired shape and sintered. Said process enables one to produce an internal-oxidized alloy at a high speed at a temperature of not more than 0.9 Tm (Tm: the melting point of the starting alloy) and does not require the step of separating an internal-oxidizing agent which step is required in the conventional process.

Abstract: A heat-resistant thin film photoelectric converter comprising a semiconductor layer, front and back electrodes, and a diffusion-blocking layer, the diffusion-blocking layer being provided between the semiconductor and at least one said electrode, and its preparation. The diffusion-blocking layer is of a metal selected from the Group IVA metals and Group VA metals of the Periodic Table. The converter avoids the reduction in efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.

Abstract: A camera is equipped with a back cover containing an exposure counter mechanism including a gear member in both frictional and gear toothed engagement with a film feeding sprocket of the camera. To accommodate films of different thickness and lengths, the cover is replacable with another having a different pressure plate, and the counter disc has indicia for counting up to 72 frames.