Abstract: According to one embodiment, there is provided a cleaning apparatus including a substrate cleaner and a member cleaner. The substrate cleaner has a substrate cleaning member placed over a first region to be opposite a substrate and a second region different from the first region. The member cleaner is placed adjacent to the second region.

Abstract: According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of the wafer, a detector detecting a residual portion of the film on the circumferential edge portion, a first movable part moving the detector along a surface of the circumferential edge portion; and a controller controlling the polishing part based on a state of the circumferential edge portion detected by the detector.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a wafer retaining module configured to retain a wafer by a chuck pin and to rotate the wafer. The apparatus further includes a wafer cleaning module configured to retain a cleaning member for cleaning a surface of the wafer and to rotate the cleaning member around a first rotation axis that is perpendicular to the surface of the wafer, the wafer cleaning module cleaning the surface of the wafer by moving the cleaning member on the surface of the wafer while the cleaning member contacts the wafer and rotates. The wafer cleaning module retains and rotates the cleaning member so that the first rotation axis does not pass through a contact region of the cleaning member with respect to the wafer.

Abstract: A polishing apparatus includes a polisher, a holder, and a supplier. The polisher polishes a semiconductor substrate or a polishing target film on a semiconductor substrate. The holder holds the semiconductor substrate and presses the semiconductor substrate or the polishing target film against the polisher to rub the semiconductor substrate or the polishing target film against the polisher. The supplier has a nozzle that is to be inserted to the inside of the polisher and that supplies a polishing solution to the inside of the polisher.

Abstract: According to one embodiment, there is provided a cleaning apparatus including a substrate cleaner and a member cleaner. The substrate cleaner has a substrate cleaning member placed over a first region to be opposite a substrate and a second region different from the first region. The member cleaner is placed adjacent to the second region.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a wafer retaining module configured to retain a wafer by a chuck pin and to rotate the wafer. The apparatus further includes a wafer cleaning module configured to retain a cleaning member for cleaning a surface of the wafer and to rotate the cleaning member around a first rotation axis that is perpendicular to the surface of the wafer, the wafer cleaning module cleaning the surface of the wafer by moving the cleaning member on the surface of the wafer while the cleaning member contacts the wafer and rotates. The wafer cleaning module retains and rotates the cleaning member so that the first rotation axis does not pass through a contact region of the cleaning member with respect to the wafer.

Abstract: A retainer ring configured to be attachable, at a first side thereof, to a polish head of a polish apparatus configured to polish a polish object by depressing the polish object against a polish pad is disclosed. The retainer ring is configured to depress the polish pad at a second side thereof. The retainer ring includes a contact surface contacting the polish pad. The contact surface applies depressing force on the polish pad. The depressing force is directed from a polish head side and is applied so as to be centered on an imaginary circle of pressure center having a radius falling substantially in a middle of an inner radius of the retainer ring and an outer radius of the retainer ring. An area of the contact surface is greater in a first region inside the circle of pressure center than in a second region outside the circle of pressure center.

Abstract: A polish apparatus including a rotatable table configured to receive a polish pad having a polish surface; a polish head configured to hold a polish object and configured to be capable of placing the polish object in contact with the polish surface while holding the polish object; at least one contact portion being provided with a contact surface and configured to be capable of contacting the polish surface when the table is in rotation; and a measurement portion configured to measure a state of the contact surface of the contact portion being configured to contact the polish surface of the polish pad.

Abstract: According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of the wafer, a detector detecting a residual portion of the film on the circumferential edge portion, a first movable part moving the detector along a surface of the circumferential edge portion; and a controller controlling the polishing part based on a state of the circumferential edge portion detected by the detector.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming plugs in a first insulator, and forming a first film on the first insulator and the plugs. The method further includes forming openings in the first film to expose the plugs in the openings, and forming a second insulator on side faces of the openings. The method further includes forming an interconnect material adjacent to the second insulator in the openings to form interconnects including the interconnect material on the plugs in the openings. The method further includes removing the first film after forming the interconnects, and forming a third insulator on the interconnects to form an air gap between the interconnects.

Abstract: A polishing apparatus includes a polisher, a holder, and a supplier. The polisher polishes a semiconductor substrate or a polishing target film on a semiconductor substrate. The holder holds the semiconductor substrate and presses the semiconductor substrate or the polishing target film against the polisher to rub the semiconductor substrate or the polishing target film against the polisher. The supplier has a nozzle that is to be inserted to the inside of the polisher and that supplies a polishing solution to the inside of the polisher.

Abstract: A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.

Abstract: A polish apparatus including a rotatable table configured to receive a polish pad having a polish surface; a polish head configured to hold a polish object and configured to be capable of placing the polish object in contact with the polish surface while holding the polish object; at least one contact portion being provided with a contact surface and configured to be capable of contacting the polish surface when the table is in rotation; and a measurement portion configured to measure a state of the contact surface of the contact portion being configured to contact the polish surface of the polish pad.

Abstract: A retainer ring configured to be attachable, at a first side thereof, to a polish head of a polish apparatus configured to polish a polish object by depressing the polish object against a polish pad is disclosed. The retainer ring is configured to depress the polish pad at a second side thereof. The retainer ring includes a contact surface contacting the polish pad. The contact surface applies depressing force on the polish pad. The depressing force is directed from a polish head side and is applied so as to be centered on an imaginary circle of pressure center having a radius falling substantially in a middle of an inner radius of the retainer ring and an outer radius of the retainer ring. An area of the contact surface is greater in a first region inside the circle of pressure center than in a second region outside the circle of pressure center.

Abstract: A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a foundation structure, a first insulating film, and a second insulating film. The foundation structure is provided on the substrate. The foundation structure includes a plurality of circuit components and a gap provided between the circuit components. The first insulating film is provided on the foundation structure. The second insulating film is provided on the first insulating film. A Young's modulus of the second insulating film is lower than a Young's modulus of the first insulating film and a Young's modulus of a silicon oxide film.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a foundation structure, a first insulating film, and a second insulating film. The foundation structure is provided on the substrate. The foundation structure includes a plurality of circuit components and a gap provided between the circuit components. The first insulating film is provided on the foundation structure. The second insulating film is provided on the first insulating film. A Young's modulus of the second insulating film is lower than a Young's modulus of the first insulating film and a Young's modulus of a silicon oxide film.

Abstract: A method for fabricating a semiconductor device according to an embodiment, includes forming a plurality of films above a substrate in a same chamber without transferring the substrate out of the chamber, forming a target film to be polished above the plurality of films, and polishing the target film by a chemical mechanical polishing (CMP) technique using a film on a front side among the plurality of films as a polishing stopper.

Abstract: A method for polishing an organic film, comprising polishing an exposed organic film provided on a semiconductor substrate by use of slurry containing resin particles.

Abstract: A method for polishing an organic film, comprising polishing an exposed organic film provided on a semiconductor substrate by use of slurry containing resin particles.