Abstract: A semiconductor device includes a first region formed with a first gate insulator and operated by a first operating voltage, a second region formed with a second gate insulator made from a material having a higher dielectric constant than a material of the first insulator, the second region being operated by a second operating voltage lower than the first operating voltage, and gate electrodes including at least lowest layers which are in contact with the first and second gate insulators and are formed together with element isolation regions by a self-alignment manner respectively.

Abstract: An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.

Abstract: An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.

Abstract: In forming an electrolytic water, pure water or ultra-pure water is added to at least one solid supporting electrolyte selected from the group consisting of oxalic acid, ammonium oxalate, ammonium formate, ammonium bicarbonate, and ammonium tartrate to prepare a solution saturated with the supporting electrolyte. The solution containing the supporting electrolyte is subjected to hydrolysis to obtain an anodic water and a cathodic water.

Abstract: A method for polishing an organic film, comprising polishing an exposed organic film provided on a semiconductor substrate by use of slurry containing resin particles.

Abstract: An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.

Abstract: A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

Abstract: In a CMP process for flatting a surface of a film on a semiconductor wafer, ionized water is used as rinsing liquid in the post-polishing step performed after the main CMP polishing step. With ionized water as rinsing liquid, abrasive particles adhered to the film surface during the main polishing step are removed.

Abstract: Disclosed is an apparatus for manufacturing an electrolytic ionic water for treating a substrate, comprising an electrolytic cell including an anodic chamber and a cathodic chamber partitioned from the anodic chamber by a porous membrane, a first carbon electrode housed in the anodic chamber, a second carbon electrode housed in said cathodic chamber, apparatus for supplying an electrolyte solution prepared by dissolving a supporting electrolyte in pure water or ultra pure water into the electrolytic cell, apparatus for applying a DC voltage between the first and second carbon electrodes and so as to electrolyze the electrolyte solution, thereby to form an oxidizing ionic water in the anodic chamber and a reducing ionic water in the cathodic chamber, a first discharge port for discharging the oxidizing ionic water from within the anodic chamber, and a second discharge port for discharging the reducing ionic water from within the cathodic chamber.

Abstract: A method of reducing the concentration of metal ions in pure water or ultrapure water and thereby obtaining pure water or ultrapure water. Such purified pure water or purified ultrapure water is used, for example, when washing semiconductor wafers, as a starting material of electrolytic ionic water, or for diluting washing water. A pair of carbon electrodes is disposed in an ultrapure water storage tank containing pure water or ultrapure water or in a purifying tank disposed in a line leading from an ultrapure water storage tank. A D.C. voltage is applied across the electrode pair. A carbon electrode material having a large specific surface area is chosen, and an electrode structure with which there is little detachment of carbon fragments is used. After the carbon electrode is molded, a carbon layer is formed on the surface of the molding by dipping the molding in an amorphous carbon bath.

Abstract: A carbon fiber-reinforced carbon composite material is disclosed which includes a matrix of carbon and unidirectionally oriented carbon fibers dispersed in the matrix, wherein the content of the carbon fibers is at least 50% based on the volume of the composite material, wherein the volume of pores having a pore diameter of 10 .mu.m or more is not greater than 5% of the total pore volume of the composite material, and wherein at least 90% of the total pore volume is the volume of open pores. The composite material is obtained by impregnating carbon fibers with a dispersion having a viscosity of 5-50 cP at 25.degree. C. and containing carbonaceous powder with an average particle diameter of smaller than 0.5 .mu.m in an organic solvent solution of a thermosetting resin. After unidirectionally aligning the carbon fibers, the impregnated fibers are molded and cured and then calcined.