Abstract: Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench. A silicon-germanium compound is deposited into the first trench and the second trench, and a test pad is removed from the test area of the wafer. The test pad includes a side surface where both the first trench and the second trench are exposed. The side surface of the test pad is scanned with a transmission electron microscope to take measurements of the silicon-germanium.

Abstract: Signaling Designs for Network Assisted Interference Cancellation and Suppression Signaling can be valuable in connection with addressing issues of interference. Signaling designs may be valuable, for example, in network-assisted interference cancellation and suppression. A method can include determining transmission information for at least one interference source for a user equipment of a base station. The method can also include signaling the user equipment about the transmission information for the at least one interference source. The transmission information can be configured to facilitate a receiver of the user equipment to cancel interference from the at least one interference source.

Abstract: A method and apparatus can be configured to operate a node in a first mode to support one or more user equipment. The method can also include operating the node in a second mode to support one or more user equipment. The coverage of the second mode is enhanced compared to the coverage of the first mode. The method can also include broadcasting information about when the second mode is available.

Abstract: A solid oxide battery includes a solid electrolyte disposed between a first electrode and a second electrode. The first electrode and the second electrode are coupled to an external source or load to charge or discharge the solid oxide battery. The solid electrolyte is formed from a proton conducting material to transport and store hydrogen, which is the source of chemical energy. The second electrode is formed from a noble metal configured to induce formation of oxygen vacancies at the interface between the second electrode and the solid electrolyte. The oxygen vacancies are used to split water molecules during charging of the solid oxide battery, which results in the generation of hydrogen. Under bias, the hydrogen ions are transported into the solid electrolyte and stored. During discharge, a reverse process occurs where hydrogen is used to generate water and electricity.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: A technique includes receiving an uplink grant that indicates a size (M) of uplink resources allocated to the user device sub-band precoder indications; determining a set of uplink sub-band allocation parameters, including at least: a total number of bits (N) for sub-band precoder indications (where N remains constant for different values of M); a number of bits (m) per each of the sub-band precoder indications; and a sub-band size (J) for each of the one or more sub-bands; wherein at least one of the number of bits (m) per sub-band precoder indication and the sub-band size (J) for each of the one or more sub-bands changes or is a different value based on different sizes (M) of uplink resources; decoding each of the one or more sub-band precoder indications; and precoding, based on the one or more sub-band precoder indications, data for transmission via the one or more sub-bands.

Abstract: A method of treating and preventing a neurological disorder, such as Alzheimer's disease, in a subject in need thereof by positioning an electromagnetic field emitting source proximal to the subject and exposing the subject to an electromagnetic field having a predetermined frequency (preferably ?300-3,000 MHz) for a predetermined absorption period (preferably greater than ?3 days). Each individual treatment (comprising exposure to the predetermined frequency for the predetermined absorption period) is continued at a predetermined schedule for a predetermined treatment period. The EMF can have a specific absorption rate up to about 8 W/kg. The methodology enhances cognition in the subject and/or treats/prevents the underlying neurological disorder or a symptom thereof.

Abstract: An inverter power cabinet includes a cabinet body and power devices arranged in the cabinet body. The cabinet body includes a low-protection grade installation cavity and an airtight high-protection grade installation cavity hermetically isolated from each other; the power devices include high protection grade power devices arranged in the low-protection grade installation cavity and low-protection grade power devices arranged in the high-protection grade installation cavity; the low-protection grade installation cavity has an outer cold air inlet and an inner hot air outlet in communication with outside world, and a first fan is provided in the low-protection grade installation cavity; and the inverter power cabinet includes a heat exchanger configured to dissipate heat of the high-protection grade installation cavity.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: Administration of human umbilical cord blood cells (HUCBC) or HUCBC-derived plasma is used to treat amyloid-based diseases, such as Alzheimer's disease, Huntington's disease, cerebral amyloid angiopathy, and type-II diabetes. Modulating inflammatory reactions by infusing HUCBC resulted in a marked reduction of amyloid plaques and immune-associated cellular damage. HUCBC infusion also significantly reduced cerebral amyloid angiopathy in mice models. These effects were associated with suppression of the CD40-CD40L interaction and a reduction in surface expressed CD-40 was observed on immune cells. Further, A? phagocytic activity was increased and soluble and insoluble A? protein levels were modulated by treatment. HUCBC-infused sera also significantly increased phagocytosis of A?1-42 peptide and inhibited immune cell CD40 expression and reduced cerebral amyloid angiopathy.

Abstract: Uplink carrier selection is performed for reduced bandwidth machine type communication devices by reserving a portion of a wideband carrier for machine type communication traffic to provide a plurality of narrowband uplink carriers in the wideband carrier, and by selecting a narrowband uplink carrier of the plurality of narrowband uplink carriers for use by a machine type communication device.

Abstract: The invention relates to a pharmaceutical composition comprising an ionic co-crystal (ICC) of lithium with salicylic acid and 1-proline (LISPRO). The pharmaceutical composition can further comprise an anti-inflammatory agent, for example, salicylic acid. An embodiment of the invention provides a method for treating Fragile X Syndrome (FXS) in a subject by administering to the subject a composition comprising a pharmaceutically effective amount of LISPRO.

Abstract: A method, apparatus, and computer program product are described that receive an indication of power levels at the base station in a wireless communications system from each user equipment of user equipments served by the base station and determine whether at least one user equipment of those user equipments is capable to overlap at least one same time-frequency resource as at least one user equipment of a remainder of those user equipments. In response to the determination that at least one user equipment is capable to overlap with at least one user equipment of the remainder, then such overlap is scheduled. Based on the overlap being scheduled, packets from the one or more user equipments received are then decoded using an advanced receiver process.

Abstract: Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench. A silicon-germanium compound is deposited into the first trench and the second trench, and a test pad is removed from the test area of the wafer. The test pad includes a side surface where both the first trench and the second trench are exposed. The side surface of the test pad is scanned with a transmission electron microscope to take measurements of the silicon-germanium.

Abstract: Various communication systems may benefit from identification of and communication of coverage shortfall. For example, certain communication systems that employ machine type communication devices may benefit from having such shortfall communicated from the devices to a base station. For example, a method can include determining an amount of coverage shortfall of a device. The method can also include transmitting an indication of the amount of coverage shortfall.

Abstract: Administration of human umbilical cord blood cells (HUCBC) or HUCBC-derived plasma is used to treat amyloid-based diseases, such as Alzheimer's disease, Huntington's disease, cerebral amyloid antigopathy, and type-II diabetes. Modulating inflammatory reactions by infusing HUCBC resulted in a marked reduction of amyloid plaques and immune-associated cellular damage. HUCBC infusion also significantly reduced cerebral amyloid angiopathy in mice models. These effects were associated with suppression of the CD40-CD40L interaction and a reduction in surface expressed CD-40 was observed on immune cells. Further, A? phagocytic activity was increased and soluble and insoluble A? protein levels were modulated by treatment. HUCBC-infused sera also significantly increased phagocytosis of A?1-42 peptide and inhibited immune cell CD40 expression and reduced cerebral amyloid angiopathy.

Abstract: Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench. A silicon-germanium compound is deposited into the first trench and the second trench, and a test pad is removed from the test area of the wafer. The test pad includes a side surface where both the first trench and the second trench are exposed. The side surface of the test pad is scanned with a transmission electron microscope to take measurements of the silicon-germanium.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: The present invention provides fusion peptides, compositions, methods and kits for treating, reducing the risk of, lessening the severity of, preventing, or delaying the onset of amyloid-related disorders, such as Alzheimer's disease and HIV associated neurocognitive impairment.