Patents by Inventor Jun Yamawaku

Jun Yamawaku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210222296
    Abstract: A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.
    Type: Application
    Filed: April 9, 2019
    Publication date: July 22, 2021
    Inventor: Jun YAMAWAKU
  • Patent number: 10937631
    Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((?/4)+n?/2) by a fractional shortening (? is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: March 2, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Tatsuo Matsudo, Chishio Koshimizu
  • Publication number: 20200373131
    Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.
    Type: Application
    Filed: August 11, 2020
    Publication date: November 26, 2020
    Inventors: Jun Yamawaku, Chishio Koshimizu
  • Publication number: 20200357606
    Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
    Type: Application
    Filed: May 1, 2020
    Publication date: November 12, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei YAMAZAWA, Masashi SAITO, Kazuki DENPOH, Chishio KOSHIMIZU, Jun YAMAWAKU
  • Patent number: 10804076
    Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: October 13, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Chishio Koshimizu, Kazuki Denpoh, Jun Yamawaku, Masashi Saito
  • Publication number: 20200312626
    Abstract: A film forming apparatus includes a high-frequency power supply capable of changing a frequency and a matcher for matching an internal impedance of the high-frequency power supply and a load impedance of a load including plasma. The matcher includes a capacitor having a fixed electrostatic capacitance and connected in series with the load. When the high-frequency power supply starts to supply a high-frequency power at a first frequency, the high-frequency power supply sweeps the frequency of the high-frequency power to be supplied such that reflected waves from the load are minimized. When it is determined that plasma is ignited, the high-frequency power supply changes the frequency of the high-frequency power to be supplied, from a second frequency at which plasma is ignited to a third frequency at which plasma is maintained, and instructs the matcher to perform an adjustment such that the reflected waves are minimized at the third frequency.
    Type: Application
    Filed: March 20, 2020
    Publication date: October 1, 2020
    Applicant: Tokyo Electron Limited
    Inventor: Jun YAMAWAKU
  • Patent number: 10777392
    Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: September 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Chishio Koshimizu
  • Publication number: 20200144026
    Abstract: A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite endse and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.
    Type: Application
    Filed: December 30, 2019
    Publication date: May 7, 2020
    Inventors: Jun YAMAWAKU, Tatsuo MATSUDO, Chishio KOSHIMIZU
  • Publication number: 20200058467
    Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.
    Type: Application
    Filed: October 24, 2019
    Publication date: February 20, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei YAMAZAWA, Kazuki DENPOH, Jun YAMAWAKU
  • Publication number: 20190221405
    Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.
    Type: Application
    Filed: March 28, 2019
    Publication date: July 18, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun YAMAWAKU, Chishio KOSHIMIZU, Tatsuo MATSUDO
  • Patent number: 10325758
    Abstract: A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: June 18, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Jun Yamawaku, Tatsuo Matsudo, Chishio Koshimizu
  • Patent number: 10283328
    Abstract: Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: May 7, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Chishio Koshimizu, Tatsuo Matsudo
  • Publication number: 20190115188
    Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((?/4)+n?/2) by a fractional shortening (? is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 18, 2019
    Inventors: Jun YAMAWAKU, Tatsuo MATSUDO, Chishio KOSHIMIZU
  • Publication number: 20190108975
    Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((?/4)+n?/2) by a fractional shortening (? is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 11, 2019
    Inventors: Jun YAMAWAKU, Tatsuo MATSUDO, Chishio KOSHIMIZU
  • Patent number: 10211031
    Abstract: Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a VF power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the VF power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the VF power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 19, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Chishio Koshimizu, Jun Yamawaku
  • Patent number: 10115614
    Abstract: A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: October 30, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Junji Oikawa, Hiroyuki Nakayama
  • Publication number: 20180308662
    Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
    Type: Application
    Filed: June 7, 2018
    Publication date: October 25, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei YAMAZAWA, Masashi SAITO, Kazuki DENPOH, Chishio KOSHIMIZU, Jun YAMAWAKU
  • Publication number: 20180218884
    Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Inventors: Jun Yamawaku, Chishio Koshimizu
  • Patent number: 9997332
    Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: June 12, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Masashi Saito, Kazuki Denpoh, Chishio Koshimizu, Jun Yamawaku
  • Patent number: 9941097
    Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: April 10, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku