Abstract: This absorption spectrometric apparatus for semiconductor production process includes a flow passageway switching mechanism connected to a discharging flow passageway of a processing chamber for a semiconductor production process and a multiple reflection type moisture concentration measuring absorption spectrometric analyzer that allows a laser beam from a laser light source to undergo multiple reflection within a cell, detects a light absorbancy change by a gas within the cell, and measures a moisture concentration within the gas. The flow passageway switching mechanism connects the discharging flow passageway by switching between a measuring flow passageway through which the gas is discharged by passing through the cell and a bypass flow passageway through which the gas is discharged without passing through the cell.

Abstract: There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

Abstract: A substrate processing apparatus includes a chamber; and a mounting table having an electrostatic attraction portion for electrostatically attracting a target substrate; a heat transfer gas supply system for injecting a heat transfer gas from the electrostatic attraction portion to the target substrate; and a separating unit by which the target substrate is separated from the electrostatic attraction portion. A method for charge-neutralizing a target substrate in the apparatus includes: supplying an ionized gas from the heat transfer gas supply system to the target substrate. The apparatus includes an irradiation unit for irradiating a soft X-ray or an UV beam toward the chamber. In the supplying of the ionized gas, the target substrate is separated from the electrostatic attraction portion by the separating unit, and a soft X-ray or an UV beam is irradiated from the irradiation unit toward a space between the target substrate and the electrostatic attraction portion.

Abstract: A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.

Abstract: Provided are a cleaning device and a cleaning method of a semiconductor manufacturing apparatus, capable of performing a cleaning process more effectively as compared to conventional cases and obtaining a high cleaning effect. A semiconductor manufacturing apparatus cleaning device 100 includes a pure water steam generating vessel 2 for generating pure water steam from pure water; a supply port 5 for supplying the pure water steam to a cleaning target portion; a supply line 4 for connecting the pure water steam generating vessel with the supply port; a collection port 6 for collecting steam used in cleaning from the cleaning target portion; a collection vessel 8 for condensing and collecting the used steam; and a collection line 7 for connecting the collection port 6 with the collection vessel 8.

Abstract: A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.

Abstract: An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).

Abstract: A substrate transfer member cleaning method that enables foreign matter attached to a substrate transfer member to be completely removed without bringing about a decrease in the throughput. A cleaning agent containing a cleaning substance in two phases of a vapor phase and a liquid phase and a high-temperature gas is jetted toward the substrate transfer member that transfers a substrate.

Abstract: A turbo-molecular pump that enables reliable suppression of attachment of depositions onto component parts thereof. The turbo-molecular pump discharges a deposition-causing gas from a processing chamber. A rotor has a rotor shaft aligned with an exhaust stream. A cylindrical casing houses the rotor therein. A plurality of blade-form rotor blades projects from the rotor orthogonally with respect to the rotor shaft and are divided into a plurality of rotor blade groups. A plurality of blade-form stator blades projects orthogonally with respect to the rotor shaft from a rotor-facing surface and are divided into a plurality of stator blade groups. Gas supply ports are located on an upstream side of the rotor blade group that is located furthest downstream in the exhaust stream, and supply a deposition-suppressing gas which includes gas molecules having a large molecular weight.

Abstract: A substrate processing apparatus that can improve the uniformity of plasma processing carried out on a wafer. The wafer is housed in a chamber of the substrate processing apparatus and subjected to plasma processing using plasma produced in the processing chamber. A temperature control mechanism jets a high-temperature gas toward at least part of an annular focus ring facing the plasma.

Abstract: A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.