Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.

Abstract: A filament forming method includes: performing first stage to apply first bias including gate and drain voltages to a resistive memory unit plural times until read current reaches first saturating state, latching read current in first saturating state as saturating read current, determining whether increasing rate of saturating read current is less than first threshold value; when increasing rate of saturating read current is not less than first threshold value, performing second stage to apply second bias, by increasing gate voltage and decreasing drain voltage, to the resistive memory unit plural times until read current reaches second saturating state, latching read current in second saturating state as saturating read current and determining whether increasing rate of saturating read current is less than first threshold value; finishing the method when increasing rate of saturating read current is less than first threshold value and saturating read current reaches target current value.

Abstract: A block erase method for a flash memory is provided. The block erase method is to perform block erase on a block with a predetermined block size. The block erase method includes: performing an erase verification on bytes byte-by-byte in the block when performing the block erase; checking an erase step of the byte when the byte does not pass the erase verification; when the erase step of the byte exceeds a predetermined threshold value, performing the block erase with a partitioned block smaller than the predetermined block size, and returning to an erase verification stage to perform the erase verification; and when the erase step of the bytes does not exceed the predetermined threshold value, continuing to perform the block erase with the predetermined block size, and returning to the erasure verification stage to continue to perform the erase verification.

Abstract: A touch panel having a cover plate, a sensor electrode layer, an insulating layer and a jumper layer is provided. The sensor electrode layer has first axis electrodes, second axis electrodes, bonding pads and first periphery traces. Each first axis electrode has first electrode blocks that are electrically connected to each other. Each second axis electrode has second electrode blocks that are electrically isolated from each other. The bonding pads are disposed on the periphery region of the cover plate. The first periphery traces are electrically connected to the bonding pads and the first axis electrodes or the second axis electrodes respectively. The insulating layer has first via holes and second via holes. The jumper layer has jumper traces and second periphery traces, wherein the second periphery traces are electrically connected to the first axis electrodes or the second axis electrodes through the first via holes.

Abstract: A coating device for coating a coating liquid onto a substrate includes: a coating head having a coating-liquid outlet, adapted to move with respect to the substrate along a first axial direction and capable of coating the substrate with coating liquid through the coating-liquid outlet; and adjustment unit connected to the coating head and including a movable pad disposed proximal to the coating-liquid outlet and adapted to move along a second axial direction for adjusting the size of the opening of the coating-liquid outlet; and a drive assembly connected to the adjustment unit for controlling the adjustment unit to move along the second axial direction. Additionally a coating method is provided.

Abstract: A manufacturing method of a touch panel is provided. The method comprises the following procedures: forming a sensing electrode layer on a cover plate, wherein the sensing electrode layer comprises a plurality of first axis electrodes, a plurality of second axis electrodes, a plurality of bonding pads and a plurality of first periphery traces; forming a insulating layer on the sensing electrode layer, wherein a plurality of first via holes and a plurality of second via holes are formed on the insulating layer; forming a jumper layer on the insulating layer, wherein the jumper layer comprises a plurality of jumper traces and a plurality of second periphery traces. Moreover, the sensing electrode layer, the insulating layer and the jumper layer are formed through a printing process, a photo etching process, a spraying process, a slit coating process, a laser scribing process, a laminating process or any combination thereof.

Abstract: A touch panel having a cover plate, a sensor electrode layer, an insulating layer and a jumper layer is provided. The sensor electrode layer has first axis electrodes, second axis electrodes, bonding pads and first periphery traces. Each first axis electrode has first electrode blocks that are electrically connected to each other. Each second axis electrode has second electrode blocks that are electrically isolated from each other. The bonding pads are disposed on the periphery region of the cover plate. The first periphery traces are electrically connected to the bonding pads and the first axis electrodes or the second axis electrodes respectively. The insulating layer has first via holes and second via holes. The jumper layer has jumper traces and second periphery traces, wherein the second periphery traces are electrically connected to the first axis electrodes or the second axis electrodes through the first via holes.

Abstract: A manufacture method and structure of a curved capacitive touch panel is disclosed. A flat flexible printed circuit board (FPCB) with capacitive touch sensing/detecting capability is provided, followed by subjecting the flat FPCB to compressing molding to form a curved FPCB. Subsequently, a curved substrate is provided, wherein an outer curved surface of the curved FPCB is bonded to an inner curved surface of the substrate, thereby forming the curved capacitive touch panel.

Abstract: A manufacturing method of a touch panel is provided. The method comprises the following procedures: forming a sensing electrode layer on a cover plate, wherein the sensing electrode layer comprises a plurality of first axis electrodes, a plurality of second axis electrodes, a plurality of bonding pads and a plurality of first periphery traces; forming a insulating layer on the sensing electrode layer, wherein a plurality of first via holes and a plurality of second via holes are formed on the insulating layer; forming a jumper layer on the insulating layer, wherein the jumper layer comprises a plurality of jumper traces and a plurality of second periphery traces. Moreover, the sensing electrode layer, the insulating layer and the jumper layer are formed through a printing process, a photo etching process, a spraying process, a slit coating process, a laser scribing process, a laminating process or any combination thereof.

Abstract: A method of manufacturing a metal oxide semiconductor thin film transistor includes forming a gate; forming a first gate insulating layer in contact with the gate under a hydrogen content greater than 100 ppm and an oxygen content greater than 2800 ppm; forming a second gate insulating layer in contact with the first gate insulating layer under a hydrogen content lower than or equal to 100 ppm and an oxygen content lower than or equal to 2800 ppm; forming a metal oxide semiconductor layer in contact with the second gate insulating layer, in which the second gate insulating layer is between the first gate insulating layer and the metal oxide semiconductor layer; and forming a source and a drain in contact with the metal oxide semiconductor layer.

Abstract: A metal oxide semiconductor thin film transistor includes a source, a drain, a metal oxide semiconductor layer, a gate, a first gate insulating layer and a second gate insulating layer. The metal oxide semiconductor layer is in contact with a portion of the source and a portion of the drain. The first gate insulating layer is interposed between the metal oxide semiconductor layer and the gate and in contact with the gate. The second gate insulating layer is interposed between the metal oxide semiconductor layer and the gate and in contact with the metal oxide semiconductor layer.

Abstract: A coating device for coating a coating liquid onto a substrate includes: a coating head having a coating-liquid outlet, adapted to move with respect to the substrate along a first axial direction and capable of coating the substrate with coating liquid through the coating-liquid outlet; and adjustment unit connected to the coating head and including a movable pad disposed proximal to the coating-liquid outlet and adapted to move along a second axial direction for adjusting the size of the opening of the coating-liquid outlet; and a drive assembly connected to the adjustment unit for controlling the adjustment unit to move along the second axial direction. Additionally a coating method is provided.

Abstract: A display panel and a method for repairing signal lines thereof are disclosed. The display panel includes at least one shorting bar, switches, and auxiliary repair lines. The switches are electrically coupled respectively to signal lines and the at least one shorting bar. Both ends of each of the auxiliary repair lines overlap one of connections between the switches and the at least one shorting bar. When a signal line is damaged, the method for repairing includes: breaking off each of the connections between the switches and the at least one shorting bar by cutting; and welding both ends of one of the auxiliary repair lines which correspond to the damaged signal line with both sides of one of the connections which correspond to the damaged signal line.

Abstract: A touch panel having a cover plate, a sensor electrode layer, an insulating layer and a jumper layer is provided. The sensor electrode layer has first axis electrodes, second axis electrodes, bonding pads and first periphery traces. Each first axis electrode has first electrode blocks that are electrically connected to each other. Each second axis electrode has second electrode blocks that are electrically isolated from each other. The bonding pads are disposed on the periphery region of the cover plate. The first periphery traces are electrically connected to the bonding pads and the first axis electrodes or the second axis electrodes respectively. The insulating layer has first via holes and second via holes. The jumper layer has jumper traces and second periphery traces, wherein the second periphery traces are electrically connected to the first axis electrodes or the second axis electrodes through the first via holes.

Abstract: The present disclosure relates to a touch-on-lens (TOL) device and a method for manufacturing the same. The method includes forming a plastic layer and a touch layer; cutting the plastic layer and the touch layer; and filially laminating the plastic layer and the touch layer after cutting to a strengthened lens. The method can not only help keep good mechanical property but can also help improve the efficiency of mass production. Moreover, the present disclosure adopts a photoetching process to form a sensing pattern, thereby making the circuit thinner and beautifying the appearance.

Abstract: The present invention is directed to an optical level composite pressure-sensitive adhesive (PSA), which includes a first portion and a second portion, which have different crosslinked densities and together form a mono-composite structure. The first portion and the second portion may be respectively bonded to a first lamination layer and a second lamination layer that are heterogeneous to each other. Accordingly, different interfacial adhesion and bulk rheology are generated at the interface of the first portion/first, lamination layer and the interface of the second portion/second lamination layer.

Abstract: A display panel and a method for repairing signal lines thereof are disclosed. The display panel includes at least one shorting bar, switches, and auxiliary repair lines. The switches are electrically coupled respectively to signal lines and the at least one shorting bar. Both ends of each of the auxiliary repair lines overlap one of connections between the switches and the at least one shorting bar. When a signal line is damaged, the method for repairing includes: breaking off each of the connections between the switches and the at least one shorting bar by cutting; and welding both ends of one of the auxiliary repair lines which correspond to the damaged signal line with both sides of one of the connections which correspond to the damaged signal line.

Abstract: A display panel and a method for repairing signal lines thereof are disclosed. The display panel includes at least one shorting bar, switches, and auxiliary repair lines. The switches are electrically coupled respectively to signal lines and the at least one shorting bar. Both ends of each of the auxiliary repair lines overlap one of connections between the switches and the at least one shorting bar. When a signal line is damaged, the method for repairing includes: breaking off each of the connections between each of the switches and the at least one shorting bar by cutting; and welding both ends of one of the auxiliary repair lines which correspond to the damaged signal line with both sides of one of the connections which correspond to the damaged signal line.

Abstract: A shutter circuit is provided for a multi-channel converter to blank the switching noise produced by the switching of the converter. The shutter circuit monitors the switching of the switches in the output stages of the converter, and when one channel performs switching, the shutter circuit will send a signal to other channels to block the current sensors thereof. The current sensors are so blocked for a period not to sense the switching noise. The mutual interference between the channels due to the switching noise of the converter is eliminated.

Abstract: A method of manufacturing thin film transistor is provided, in which the method of manufacturing includes a new etching process of island semiconductor. The new etching process of island semiconductor is controlled by a flow rate of etching gas and a regulation of etching power. When etching the island semiconductor, a part of gate insulation layer exposed out of the island semiconductor is etched at the same time. Consequently, the thickness of gate insulation layer over the storage capacitance electrode is reduced, the distance between the pixel electrode and the storage capacitance electrode is decreased, and the storage capacitance of pixel is increased. Finally, the width of storage capacitance electrode is reduced appropriately and the aperture ratio of product is increased.