Abstract: Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

Abstract: Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Abstract: A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.

Abstract: Example embodiments may provide an increased efficiency laser chip and/or a vertical external cavity surface emitting laser (VECSEL) using the same. Example embodiment laser chips may include a substrate; a DBR (distributed Bragg reflector) layer on the substrate, an active layer on the DBR layer having multiple quantum wells excited by a pump beam to generate light, and/or an upper coating layer on the active layer by alternately stacking first and second layers each having different refractive indexes. Thicknesses of the first and second layers may be substantially equal to a quarter of a wavelength of light generated by the active layer.

Abstract: A vertical external cavity surface emitting laser (VECSEL) in which the full-width at half maximum (FWHM) of laser light is reduced by two etalon filter layers to improve the efficiency of second harmonic (SHG) crystal is provided. The VECSEL includes: a laser chip for generating laser light; a first etalon filter layer formed on the laser chip; a second etalon filter layer that is formed on the first etalon filter layer and has a different refractive index than the first etalon filter layer; a first mirror separated from and disposed obliquely to the laser chip; a second mirror for reflecting the laser light reflected from the first mirror back to the first mirror to form a cavity with the laser chip; and an SHG crystal disposed along an optical path between the first and second mirrors and doubles the frequency of the laser light generated in the laser chip.

Abstract: Provided is a CMOS transistor formed using Ge condensation and a method of fabricating the same. The CMOS transistor may include an insulating layer, a silicon layer on the insulating layer and including a p-MOS transistor region and an n-MOS transistor region, a first gate insulating layer and a first gate on a channel region of the p-MOS transistor region, and a second gate insulating layer and a second gate on a channel region of the n-MOS transistor region, wherein a source region and a drain region of the p-MOS transistor region may be tensile-strained due to Ge condensation, and the channel region of the n-MOS transistor region may be tensile-strained due to the Ge condensation.

Abstract: A Vertical External Cavity Surface Emitting Laser (VECSEL) system is provided. The VECSEL system includes a laser device including an active layer in which laser light is generated by pumping and a reflector reflecting the laser light generated in the active layer; an optical element that forms a cavity together with the reflector of the laser device and reduces a line width of laser light; and a SHG (Second Harmonic Generation) device that is disposed between the laser device and the optical element and doubles the frequency of laser light.

Abstract: A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0?y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.

Abstract: Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR) having a LHI stack structure; and a periodic gain layer that is formed on the LHI-DBR and generates laser light by being excited by the pumping beam; and an external cavity mirror that is installed outside the laser chip and faces the periodic gain layer and constitutes a laser cavity with the LHI-DBR.

Abstract: A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.

Abstract: Example embodiments may provide an increased efficiency laser chip and/or a vertical external cavity surface emitting laser (VECSEL) using the same. Example embodiment laser chips may include a substrate; a DBR (distributed Bragg reflector) layer on the substrate, an active layer on the DBR layer having multiple quantum wells excited by a pump beam to generate light, and/or an upper coating layer on the active layer by alternately stacking first and second layers each having different refractive indexes. Thicknesses of the first and second layers may be substantially equal to a quarter of a wavelength of light generated by the active layer.

Abstract: A Vertical External Cavity Surface Emitting Laser (VECSEL) system is provided. The VECSEL system includes a laser device including an active layer in which laser light is generated by pumping and a reflector reflecting the laser light generated in the active layer; an optical element that forms a cavity together with the reflector of the laser device and reduces a linewidth of laser light; and a SHG (Second Harmonic Generation) device that is disposed between the laser device and the optical element and doubles the frequency of laser light.

Abstract: Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR) having a LHI stack structure; and a periodic gain layer that is formed on the LHI-DBR and generates laser light by being excited by the pumping beam; and an external cavity mirror that is installed outside the laser chip and faces the periodic gain layer and constitutes a laser cavity with the LHI-DBR.

Abstract: A vertical external cavity surface emitting laser (VECSEL) in which the full-width at half maximum (FWHM) of laser light is reduced by two etalon filter layers to improve the efficiency of second harmonic (SHG) crystal is provided. The VECSEL includes: a laser chip for generating laser light; a first etalon filter layer formed on the laser chip; a second etalon filter layer that is formed on the first etalon filter layer and has a different refractive index than the first etalon filter layer; a first mirror separated from and disposed obliquely to the laser chip; a second mirror for reflecting the laser light reflected from the first mirror back to the first mirror to form a cavity with the laser chip; and an SHG crystal disposed along an optical path between the first and second mirrors and doubles the frequency of the laser light generated in the laser chip.

Abstract: A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

Abstract: The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging from tens of nm to less than a few ?m, and to an element fabricated thereby. According to the present invention, the fabrication method of the hyperboloid-drum element comprises forming an epitaxial layer which includes an n-type semiconductor joined with a p-type semiconductor on a substrate and an active region near a border region and a boundary between the n-type semiconductor and the p-type semiconductor; and etching the epitaxial layer into a shape of the hyperboloid-drum having the minimum diameter at the active region by an ion-beam etching method. The hyperboloid-drum element fabricated in accordance with the present invention has advantages of uniformity in size and good reproducibility.

Abstract: A semiconductor optical device including an SSC region includes a semiconductor substrate, a lower clad layer grown on the semiconductor substrate, and an upper clad layer grown on the lower clad layer. The semiconductor optical device with an SSC (Spot Size Conversion) area includes a gain area including an active layer grown between the lower clad layer and the upper clad layer to generate/amplify an optical signal; and an SSC (Spot Size Conversion) area including a waveguide layer extended from the active layer positioned between the lower and upper clad layers, such that it performs a spot size conversion (SSC) process of the optical signal generated from the gain area and generates the SSC-processed optical signal.

Abstract: A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

Abstract: A WDM optical transmitter using a wideband gain laser comprises a plurality of wideband gain lasers and a wavelength division multiplexer. Each wideband gain laser includes a gain medium with a 3 dB bandwidth of 40 nm or more at a threshold current, and it amplifies corresponding incoherent light injected into the gain medium and outputs a corresponding channel. The multiplexer multiplexes channels, outputted from the wideband gain lasers, into an optical signal in a WDM scheme and outputs the multiplexed optical signal.