Abstract: A SiC vertical power switch is formed with planar polysilicon gates. For forming the source metal contact opening over the N+ sources, the large difference in oxidation rates of the planar polysilicon gate and the SiC surface of the N+ source is utilized. A blanket (no mask) oxidation step forms a relatively thick oxide layer over the top of the polysilicon gates and along the side edges of the polysilicon gates, while the oxide formed over the exposed SiC source regions is much thinner. A short blanket etch (no mask) is then used to remove the very thin oxide layer over the source regions. The source metal is then deposited over the insulated gates and the exposed N+ source, where the source metal is self-aligned to the gate so as to have a very repeatable and optimally minimum spacing for a maximum cell density.

Abstract: The present disclosure relates to the technical field of body-shaping garments, and specifically to a multi-layer fabric with patterns and a body-shaping garment. The multi-layer fabric includes a top fabric layer, a lining fabric layer, and an intermediate fabric layer between the top fabric layer and the lining fabric layer. The intermediate fabric layer includes a hollow pattern. The portion of the top fabric layer that corresponds to the hollow pattern is a see-through mesh structure, and the portion of the lining fabric layer that corresponds to the hollow pattern is a certain color so that the certain color is viewable through the see-through mesh structure of the top fabric layer.

Abstract: Examples of methods for determining an adaptive thermal diffusivity kernel are described herein. In some examples, an adaptive thermal diffusivity kernel is determined based on a map. In some examples, a temperature is predicted based on the adaptive thermal diffusivity kernel. In some examples, the map includes a temperature map, a shape map, or a concatenation of the temperature map and the shape map.

Abstract: Heterostructure and double-heterostructure trench-gate devices, in which the substrate and/or the body are constructed of a narrower-bandgap semiconductor material than the uppermost portion of the drift region. Fabrication most preferably uses a process where gate dielectric anneal is performed after all other high-temperature steps have already been done.

Abstract: In one example in accordance with the present disclosure, an electronic device is described. An example electronic device includes a processor and memory storing executable instructions that when executed cause the processor to receive an image of a polymer melt pool captured during crystallization of the polymer melt pool. The instructions also cause the processor to measure brightness of the polymer melt pool in the captured image. The instructions further cause the processor to determine crystallization information of the polymer melt pool based on the measured brightness of the polymer melt pool.

Abstract: Examples of methods are described herein. In some examples, a method includes generating, using a compensation machine learning model after training, a compensated model based on a three-dimensional (3D) object model. In some examples, the compensation machine learning model is trained by generating candidate compensation plans and evaluating, using a deformation machine learning model, the candidate compensation plans. In some examples, the method includes adjusting the 3D object model based on the compensated model to produce an adjusted model.

Abstract: Examples of methods are described herein. In some examples, a method includes determining a graph representation of a three-dimensional (3D) object. In some examples, the graph representation includes nodes and edges associated with the nodes. In some examples, each node includes a temperature profile attribute. In some examples, the method includes predicting, using a machine learning model, a deformation of the 3D object based on the graph representation.

Abstract: Examples of methods for model prediction are described herein. In some examples, a method includes predicting a compensated model. In some examples, the compensated model is predicted based on a three-dimensional (3D) object model. In some examples, a method includes predicting a deformed model. In some examples, the deformed mode is predicted based on the compensated model.

Abstract: Examples of methods are described. In some examples, a method includes determining objects corresponding to a manufacturing period of three dimensional (3D) printing. In some examples, the method includes packing build volumes based on the objects. In some examples, the method includes simulating manufacturing powder degradation based on the build volumes. In some examples, the method includes determining a quantity of manufacturing powder consumption based on the manufacturing powder degradation. In some examples, the method includes adjusting a manufacturing parameter based on the quantity of manufacturing powder consumption.

Abstract: Examples of methods are described. In some examples, a method includes determining a quantification of a spatial neighborhood of a voxel of a build volume. In some examples, the method includes predicting, using a machine learning model, a manufacturing powder degradation based on the quantification and a position of the voxel.

Abstract: Examples of methods are described. In some examples, a method includes determining, using a variational autoencoder model, a latent space representation based on a three-dimensional (3D) input. In some examples, the 3D input represents a build of manufacturing powder. In some examples, the method includes predicting manufacturing powder degradation based on the latent space representation.

Abstract: Examples of methods are described. In some examples, a method may include producing, by a processor, a density determination of a lattice structure. In some examples, the method may include producing, by the processor, a beam thickness determination of the lattice structure. In some examples, the method may include adjusting a beam thickness of the lattice structure based on the density determination and the beam thickness determination.

Abstract: A vibration damping loudspeaker includes a sound-generating unit, a magnetic member, an assembly-auxiliary frame and dampers. Aligning units of the assembly-auxiliary frame are coupled to positioning units of the sound-generating unit. The dampers are symmetrically disposed between the magnetic member and the assembly-auxiliary frame. The sound-generating unit and the magnetic member can be quickly and easily mounted in place because of the assembly-auxiliary frame to not only enhance the production yield of the vibration damping loudspeaker but also allow the dampers to function as a buffer between the sound-generating unit and the magnetic member, so as to achieve vibration damping and vibration isolation during the operation of the vibration damping loudspeaker to spare users the discomfort they will otherwise experience for using electronic devices.

Abstract: The present disclosure describes techniques for managing secret information. A material set may be created. The material set may correspond to a material set name (MSN). The material set may be configured to contain secret information and information for identifying destinations that are authorized to access the secret information. The secret information may be managed by using the MSN to identify and track the secret information and without exposing the secret information.