Abstract: A system, method, and device for visualizing network topology are disclosed. The method includes (i) automatically generating a network topology visualization of network assets for a network, and (ii) grouping the network assets into a plurality of groupings based on a set of user selected distinct criteria.

Abstract: A hybrid power system including a transmission module, a motor, an engine generator, an energy storage module, and an electrical energy distributor is disclosed. The motor is connected to the transmission module. The electrical energy distributor is coupled to the motor. The engine generator is coupled to the electrical energy distributor. The engine generator is adapted to rotate at a constant speed to generate a first power, and the first power is transmitted to the motor and the energy storage module by the electrical energy distributor.

Abstract: Examples of methods are described. In some examples, a method includes determining, using a variational autoencoder model, a latent space representation based on a three-dimensional (3D) input. In some examples, the 3D input represents a build of manufacturing powder. In some examples, the method includes predicting manufacturing powder degradation based on the latent space representation.

Abstract: This application provides an information processing method and apparatus, an electronic device, a computer program product, and a non-transitory computer-readable storage medium. The method includes: obtaining an information stream and a promotion video in response to a user trigger operation, the information stream including at least one piece of media information and the promotion video including at least one material to be recommended; and displaying, at a first area of an information stream interface, a first part of the promotion video in a presentation mode and displaying, at a second area of the information stream interface, a second part of the promotion video in a transparent mode, so as to enable the information stream interface to be revealed through the second area, the first area and the second area being dynamically changing areas.

Abstract: Examples of methods are described. In some examples, a method may include producing, by a processor, a density determination of a lattice structure. In some examples, the method may include producing, by the processor, a beam thickness determination of the lattice structure. In some examples, the method may include adjusting a beam thickness of the lattice structure based on the density determination and the beam thickness determination.

Abstract: A vibration damping loudspeaker includes a sound-generating unit, a magnetic member, an assembly-auxiliary frame and dampers. Aligning units of the assembly-auxiliary frame are coupled to positioning units of the sound-generating unit. The dampers are symmetrically disposed between the magnetic member and the assembly-auxiliary frame. The sound-generating unit and the magnetic member can be quickly and easily mounted in place because of the assembly-auxiliary frame to not only enhance the production yield of the vibration damping loudspeaker but also allow the dampers to function as a buffer between the sound-generating unit and the magnetic member, so as to achieve vibration damping and vibration isolation during the operation of the vibration damping loudspeaker to spare users the discomfort they will otherwise experience for using electronic devices.

Abstract: The present disclosure describes techniques for managing secret information. A material set may be created. The material set may correspond to a material set name (MSN). The material set may be configured to contain secret information and information for identifying destinations that are authorized to access the secret information. The secret information may be managed by using the MSN to identify and track the secret information and without exposing the secret information.

Abstract: Disclosed in the present disclosure are a beverage maker, and a method and device for controlling a beverage brewing process, which belong to the field of small household appliances. A brewing unit of the beverage maker includes a pressurizing member for generating pressure in the brewing unit in the beverage brewing process, and a pipe supplying water to the brewing unit is provided with a flowmeter. The method includes: supplying water to the brewing unit in response to a start signal of current beverage brewing, and obtaining state change information of the flowmeter, where the state change information is configured to indicate a rotational speed change trend of the flowmeter in a current beverage brewing process.

Abstract: Examples of modifiable structures are described herein. In some examples, a structure includes a first lattice. In some examples, the first lattice provides a property of the structure. In some examples, the structure includes a modifiable second lattice. In some examples, the modifiable second lattice may adjust the property of the structure.

Abstract: Examples of methods are described herein. In some examples, a method includes determining a first portion within a build volume. In some examples, the method includes packing first objects in the first portion. In some examples, the method includes packing using a genetic procedure. In some examples, the method includes packing, using the genetic procedure, second objects in the build volume.

Abstract: Systems and methods of predicting temperature during a build of a three-dimensional (3D) part include determining a temperature profile at a plurality of layers of a part based on geometric characteristics of the 3D part as defined by a 3D part file, and adjusting a process parameter of the build based on the determined temperature.

Abstract: A vertical MOSFET has an N-type SiC drift layer connected to a drain electrode. An overlying Si layer creates an n-N heterojunction at the top of the SiC drift layer. A P-well layer and N+ source regions are formed in the Si layer. Trenched gates are formed in the Si layer that invert the P-well to create a conductive path between the Si source regions and the SiC drift region. JFET channel regions and gate regions are formed in the SiC layer for improving reliability of the MOSFET under reverse voltage conditions and under short circuit conditions. The SiC drift layer results in a higher breakdown voltage, lower on-resistance, and improved thermal conductivity, and the upper Si layer retains its higher channel mobility and stability and high gate drive efficiency.

Abstract: In an example in accordance with the present disclosure, a fiber molding screen is described. The fiber molding screen includes a first region and a second region. The fiber molding screen includes a first set of pores formed within the first region. Each pore of the first set of pores has a first pore trajectory angle between a longitudinal axis of the pore and the first region surface. The fiber molding screen also includes a second set of pores formed within the second region. Each pore of the second set of pores has a second pore trajectory angle between a longitudinal axis of the pore and the second region surface. The second pore trajectory angle is different than the first pore trajectory angle.

Abstract: An example three-dimensional (3D) printer may include a camera to capture a low-resolution thermal image of a build material bed. The 3D printer may include an interpolation engine to generate an interpolated thermal image based on the low-resolution thermal image. The 3D printer may also include a correction engine to enhance fine details of the interpolated thermal image without distorting thermal values from portions of the interpolated thermal image without fine details to produce an enhanced thermal image.

Abstract: A vertical trench MOSFET is formed with deep P-shield regions below portions of each gate trench. The deep P-shield regions are effectively downward extensions of the P-body/well, and are electrically coupled to the top source electrode. The P-shield regions abut the bottom portions and lower sides of the gate trenches, so that those small portions of the gate trench do not create N-channels and do not conduct current. Accordingly, each trench comprises an active gate portion that creates an N-channel and a small non-active portion that abuts the P-shield regions. The spacing of the P-shield regions along each gate trench is selected to achieve the desired electric field spreading to protect the gate oxide from punch-through. No field plate trenches are needed to be formed in the active area of the MOSFET. The deep P-shield regions may be formed in trench areas that are deeper than the active gate trench areas.

Abstract: A vertical MOSFET has an N-type drift layer over an N+ substrate. A horizontal JFET layer overlies the drift layer, where the JFET layer has P-type gate regions and N-type channel regions. A first N-type layer overlies the JFET layer. A P-type well layer overlies the first N-type layer. Gate trenches are formed through the P-type well layer and into the first N-type layer. N-type source regions abut the top areas of the gate trenches, and a source electrode contacts the source regions. The JFET N-type channel regions are generally directly below the gate trenches for conducting a vertical current when the MOSFET is in an on state. The source electrode is electrically connected to the JFET P-type gate regions via a deep P-type contact region. The JFET N-type channel regions pinch off during short circuit high current conditions to limit drain current.

Abstract: Examples of structures are described herein. In some examples, a structure includes a lattice of posts. In some examples, the lattice of posts forms an opening between the posts. In some examples, the structure includes an appendage attached to a post of the posts. In some examples, the appendage extends over the opening. In some examples, the appendage is non-load bearing.

Abstract: Examples of methods are described herein. In some examples, a method includes predicting a first sintering state of an object using a first machine learning model trained based on a first time segment. In some examples, the method includes predicting a second sintering state of the object using a second machine learning model trained based on a second time segment. In some examples, the method includes combining, using a fusion machine learning model, the first sintering state and the second sintering state to produce an overall sintering state.

Abstract: According to examples, a processor may identify locations on a digital 3D model of an object corresponding to positions at which features are to be added to the object. For each of a plurality of locations of the identified locations, the processor may identify displacements of each of a plurality of patch points around the location from the surface of the digital 3D model. The processor may also create a map of the digital 3D model that encodes the identified displacements of the patch points around the locations, in which a 3D fabrication system is to fabricate the object to include the plurality of features based on the digital 3D model and the created map.