Abstract: A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: A composition and associated method for oxide chemical mechanical planarization (or other polishing) are described. The composition and associated method afford high oxide removal rates while they simultaneously afford low levels of defectivity, haze, and scratching during polishing (e.g., CMP). The composition comprises an abrasive, a fluoride salt, and an acetylenic alcohol.

Abstract: A printing plate includes a substantially free gelatin free polymeric film which includes a coating layer of a polymer having at least one -POXY pendant group, pendant carboxyl groups and further comprises a sulphonated monomer, salt or derivative.

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: Gel-free colloidal abrasive polishing compositions and associated methods for polishing (e.g., chemical mechanical polishing) are described. These abrasive polishing compositions are comprised of a surface-modified colloidal abrasive that has been modified with a boron-containing compound(s), such as boron surface-modified colloidal ceria or silica. These compositions are useful in chemical mechanical planarization (CMP) applications as well as in substrate polishing applications. These abrasive compositions are most often negatively-charged colloids, which remain as stable negatively-charged colloids even in acidic media.

Abstract: Gel-free colloidal abrasive polishing compositions and associated methods for polishing (e.g., chemical mechanical polishing) are described. These abrasive polishing compositions are comprised of a surface-modified colloidal abrasive that has been modified with a boron-containing compound(s), such as boron surface-modified colloidal ceria or silica. These compositions are useful in chemical mechanical planarization (CMP) applications as well as in substrate polishing applications. These abrasive compositions are most often negatively-charged colloids, which remain as stable negatively-charged colloids even in acidic media.

Abstract: A polymeric film which is substantially gelatin free has a polymeric film substrate and a coating layer containing a polymer having at least one or more repeating units having at least one or more pendant (—POXY) groups, wherein X and Y, which may be the same or different, are OH or OM wherein M is a cation. The polymeric film is suitable for use as a component of a printing plate.

Abstract: A substantially gelatin free polymeric film includes a coating layer of a polymer having at least one —POXY pendant group, pendant carboxyl group or capable of forming carboxyl groups and further comprises a sulphonated monomer, salt or derivative.

Abstract: An oriented polyester film coated on at least one surface with a coating that improves its adhesion to gelatin is disclosed. The dry coating contains one or more sulfopolyesters; one or more tetrablock copolymer resins; and one or more non-volatile polyamines. Other ingredients, such as particulate materials and surfactants, may be present in the coating. The coating is preferably applied at the interdraw stage.

Abstract: An orientated polyester film coated on at least one surface with a coating that improves its antiblocking properties is disclosed. The coating contains an organic polymer and about 0.002% to 1.5% by weight, based on the weight of the coating, of porous particles that have a pore volume of at least 0.03 mL/g and a particle size of about 0.5 .mu.m to 4.5 .mu.m.

Abstract: An input circuit to a semiconductor device may selectively accept different voltage logic levels (e.g., TTL or CMOS) as selected by a preset selection signal. The selection signal activates an N-type or P-type transistor in the input circuit which alters the threshold switching voltage of the input circuit logic. By altering the input threshold voltage, both TTL and CMOS input signals may be correctly triggered. An additional circuitry may be provided to allow a low voltage circuit (e.g., 3.3 Volts) to be tolerant of higher voltage inputs (e.g., 5 Volts). An isolation transistor isolates the input of the circuit from the high voltage signal, while a pulldown transistor pulls a high logic, high voltage signal down to supply voltage level.