Patents by Inventor June Woo Lee

June Woo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120244722
    Abstract: A selective crystallization method includes placing a first substrate including first crystallization regions on a second substrate including second crystallization regions such that the first crystallization regions and the second crystallization regions are arranged alternately, and crystallizing the alternately-arranged first crystallization regions and the second crystallization regions with a laser beam. A laser crystallization apparatus can be used in the selective crystallization method.
    Type: Application
    Filed: February 10, 2012
    Publication date: September 27, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Do-Young Kim, June-Woo Lee, Won-Kyu Lee
  • Publication number: 20120146033
    Abstract: An organic light-emitting display apparatus that includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes electrically connected to the active layer; a pixel electrode formed on the same layer as the gate electrode; a light-emitting layer formed on the pixel electrode; a passivation layer formed on upper surfaces of the source and drain electrodes and upper surfaces of wirings formed on the same layer as the source and drain electrodes; an organic insulating layer that covers the thin film transistor, comprises an opening that exposes an upper surface of the pixel electrode, and directly contacts the passivation layer; and a facing electrode that is formed on the light-emitting layer, and is formed to directly contact the organic insulating layer to face the pixel electrode.
    Type: Application
    Filed: September 23, 2011
    Publication date: June 14, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: June-Woo Lee, Joon-Hoo Choi
  • Publication number: 20120146032
    Abstract: An organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including an active layer, a gate electrode including a gate lower electrode and a gate upper electrode, a source electrode, and a drain electrode, an organic light emitting device electrically connected to the thin film transistor, wherein a pixel electrode formed of the same material as at least a part of the gate electrode in the same layer, an intermediate layer including a light emitting layer, and an opposed electrode arranged to face the pixel electrode are sequentially deposited.
    Type: Application
    Filed: September 12, 2011
    Publication date: June 14, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: June-Woo Lee, Chun-Gi You, Joon-Hoo Choi
  • Publication number: 20120146031
    Abstract: An organic light-emitting display device in which a pixel electrode is formed by extending from source and drain electrodes, a capacitor including a thin upper capacitor electrode formed below the pixel electrode and constituting a metal-insulator-metal (MIM) CAP structure, thereby simplifying manufacturing processes, increasing an aperture ratio, and improving a voltage design margin.
    Type: Application
    Filed: August 16, 2011
    Publication date: June 14, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventor: June-Woo Lee
  • Publication number: 20120138936
    Abstract: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: a substrate in which a light-emitting region and a thin-film transistor (TFT) region are defined; and a plurality of insulating films formed on the substrate. A refractive index changes at only one of the interfaces between insulating films, which correspond to the light-emitting region and are formed between the substrate and a first electrode of an organic electroluminescence display element, and a refractive index changes at two or more of the interfaces between insulating films which correspond to the TFT region.
    Type: Application
    Filed: June 13, 2011
    Publication date: June 7, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: June-Woo Lee, Sung-Ho Kim
  • Publication number: 20110278615
    Abstract: An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.
    Type: Application
    Filed: March 22, 2011
    Publication date: November 17, 2011
    Inventors: Dae-Hyun No, Jong-Hyun Choi, Gun-Shik Kim, June-Woo Lee
  • Publication number: 20110049523
    Abstract: An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.
    Type: Application
    Filed: August 16, 2010
    Publication date: March 3, 2011
    Inventors: Jong-Hyun Choi, June-Woo Lee, Kwang-Hae Kim, Kyoung-Bo Kim
  • Publication number: 20100225621
    Abstract: A gate driving apparatus includes a first stage which outputs a first gate output signal, and a second stage which outputs a second gate output signal. The first stage includes: a transistor which includes a gate electrode, a source electrode and a drain electrode; and a dummy transistor which includes a dummy gate electrode, a dummy source electrode and a dummy drain electrode. The gate electrode receives the second gate output signal, and the dummy source electrode is connected to the source electrode or the drain electrode of the transistor and prevents static electricity from flowing to the first stage.
    Type: Application
    Filed: February 22, 2010
    Publication date: September 9, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyung-Gi JUNG, Jeong-Young LEE, June-Woo LEE, Sok LEE
  • Publication number: 20100052534
    Abstract: A flat panel display device that can achieve uniformity between pixel circuits and improved image quality includes: a first pixel including a first light emitting device and not including a pixel circuit; and a second pixel spaced apart from the first pixel and including a first circuit that is electrically connected to the first light emitting device. Active layers of thin film transistors in the pixel circuits are formed of polycrystalline silicon crystallized from an amorphous silicon and patterned from an area of the polycrystalline silicon in which lasers of an excimer laser annealing process did not overlap.
    Type: Application
    Filed: August 25, 2009
    Publication date: March 4, 2010
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventor: June-Woo LEE
  • Publication number: 20090165706
    Abstract: A method for forming a plurality of metal lines in a semiconductor device including forming first insulating layer patterns on a semiconductor substrate, the first insulating patterns being spaced from each other; depositing a metal layer on and between the first insulating layer patterns; planarizing the metal layer; patterning the planarized metal layer to form the plurality of metal lines between the first insulating layer patterns; and forming a second insulating layer on and between the metal lines.
    Type: Application
    Filed: March 3, 2009
    Publication date: July 2, 2009
    Applicant: Dongbu Electronics Co., Ltd.
    Inventor: June Woo LEE
  • Patent number: 7517799
    Abstract: A method for forming a plurality of metal lines in a semiconductor device including forming first insulating layer patterns on a semiconductor substrate, the first insulating patterns being spaced from each other; depositing a metal layer on and between the first insulating layer patterns; planarizing the metal layer; patterning the planarized metal layer to form the plurality of metal lines between the first insulating layer patterns; and forming a second insulating layer on and between the metal lines.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: April 14, 2009
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: June Woo Lee
  • Patent number: 7473984
    Abstract: A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: January 6, 2009
    Assignee: DongbuAnam Semiconductor Inc.
    Inventor: June Woo Lee
  • Patent number: 7371678
    Abstract: A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: May 13, 2008
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: June-Woo Lee
  • Publication number: 20080057738
    Abstract: An apparatus for atomic layer deposition (ALD) and methods for manufacturing a semiconductor device using the same. In one example embodiment, an ALD apparatus includes a heater, a plasma device, a distance control unit, and a controller. The heater is configured to have a semiconductor substrate mounted thereon. The plasma device is positioned opposite an upper side of the heater. The distance control unit is configured to control a distance between the plasma device and the semiconductor substrate. The controller is configured to determine whether the semiconductor substrate has been plasma-damaged by the plasma device.
    Type: Application
    Filed: August 30, 2007
    Publication date: March 6, 2008
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: June Woo LEE
  • Publication number: 20070148904
    Abstract: An HDP-CVD apparatus includes a valve assembly, a pump, and a control unit for adjusting the supply of He gas to be within a preset range through control of the valve assembly and the pump so that an actual wafer temperature, which was previously determined, is maintained at a preset temperature during a deposition process.
    Type: Application
    Filed: December 27, 2006
    Publication date: June 28, 2007
    Inventor: June Woo Lee
  • Patent number: 7202158
    Abstract: A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: April 10, 2007
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: June Woo Lee
  • Publication number: 20060148236
    Abstract: A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.
    Type: Application
    Filed: December 30, 2005
    Publication date: July 6, 2006
    Applicant: DongbuAnam Semiconductor Inc.
    Inventor: June-Woo Lee