Abstract: The present invention relates to a flexible multi-functional logic circuit which switches a current direction to a serial or parallel direction using at least two single electron transistors (SETs) having the same pattern and as many field effect transistors (FETs) as the number of the single electron transistors and performs operations on multi-valued signals using Coulomb oscillation that is the unique characteristic of SET to enable conversion of a single logic circuit to four basic logic circuits of NAND, OR, NOR and AND gates and a device using the same.

Abstract: Provided herein is an MV DRAM device capable of storing multiple value levels using an SET device. The device includes one or more word lines; one or more bitlines; a DRAM cell connected to intersections of the word lines and the bitlines; a current source transistor having a source connected to a power supply voltage and a gate and a drain connected to the bitlines; an SET (single electron transistor) device having a gate connected to the bitlines and a source connected to the ground voltage; and a transistor connected between the bitlines and the drain of the SET device, wherein the gate of the transistor is connected to the ground voltage. According to the MV DRAM device of the present invention, since two or more multiple value data are stored in a cell, it is possible to increase the storage density of the device.

Abstract: Provided is a multi-valued dynamic random access memory (DRAM) cell using a single electron transistor (SET). The multi-valued DRAM cell using the SET applies different refresh signals to a load current transistor for controlling current supply to the SET and a voltage control transistor for controlling a terminal voltage of the SET and refreshes a data value stored in the SET by a predetermined period to reduce standby current and stably supply a voltage low enough to satisfy a coulomb-blockade condition to the terminal of the SET.

Abstract: The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.

Abstract: The present invention relates to a flexible multi-functional logic circuit which switches a current direction to a serial or parallel direction using at least two single electron transistors (SETs) having the same pattern and as many field effect transistors (FETs) as the number of the single electron transistors and performs operations on multi-valued signals using Coulomb oscillation that is the unique characteristic of SET to enable conversion of a single logic circuit to four basic logic circuits of NAND, OR, NOR and AND gates and a device using the same.