Patents by Inventor Jung Chak Ahn

Jung Chak Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10367024
    Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: July 30, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seungjoo Nah, Jung-Chak Ahn, Kyung-Ho Lee
  • Publication number: 20190198555
    Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 27, 2019
    Inventor: JUNG-CHAK AHN
  • Publication number: 20190157329
    Abstract: An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate including photoelectric elements, a first color filter disposed on the substrate, a second color filter disposed on the substrate to be adjacent to the first color filter, a covering film disposed between sidewalls of the first and second color filters, and an air gap formed in the covering film.
    Type: Application
    Filed: June 21, 2018
    Publication date: May 23, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hong Ki KIM, Jung Chak Ahn, In Sung Joe
  • Patent number: 10249677
    Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: April 2, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Jung-Chak Ahn
  • Patent number: 10128288
    Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Sun Oh, Jung Chak Ahn, Young Woo Jung
  • Patent number: 10096632
    Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: October 9, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Sun Oh, Yi Tae Kim, Jung Chak Ahn
  • Publication number: 20180219042
    Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
    Type: Application
    Filed: March 27, 2018
    Publication date: August 2, 2018
    Inventor: JUNG-CHAK AHN
  • Patent number: 9966407
    Abstract: A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: May 8, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Chan Kim, Jung Chak Ahn, Hyuk Soon Choi, Kyung Ho Lee, Jun Suk Lee, Young Woo Jung
  • Patent number: 9954025
    Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: April 24, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Jung-Chak Ahn
  • Patent number: 9893123
    Abstract: An image sensor includes a substrate comprising a first face and a second surface which faces the first surface and on which light is incident, a semiconductor photoelectric conversion device on the substrate, a gate electrode located between the first surface of the substrate and the semiconductor photoelectric conversion device and extending in a first direction perpendicular to the first surface, and an organic photoelectric conversion device stacked on the second surface of the substrate.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-yon Lee, Kyoung-won Na, Jung-chak Ahn, Myung-won Lee, Joo-yeong Gong
  • Patent number: 9887217
    Abstract: Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: February 6, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Chak Ahn, Seung Joo Nah, Kyung Ho Lee, Young Woo Jung
  • Patent number: 9837465
    Abstract: An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: December 5, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Chak Ahn, Bum-Suk Kim
  • Patent number: 9818781
    Abstract: An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: November 14, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Ho Lee, Jung Chak Ahn, Hyuk Soon Choi
  • Patent number: 9806113
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 31, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong
  • Publication number: 20170287969
    Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.
    Type: Application
    Filed: June 15, 2017
    Publication date: October 5, 2017
    Inventors: SEUNGJOO NAH, JUNG-CHAK AHN, KYUNG-HO LEE
  • Patent number: 9748299
    Abstract: A pixel for a backside illuminated (BSI) image sensor includes a semiconductor substrate having a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface to generate charges in response to light received through the second surface, first trench-type isolation region surrounding the photoelectric conversion region and extending vertically from the second surface, a floating diffusion region in the semiconductor substrate below the photoelectric conversion region, and a transfer gate extending vertically from the first surface towards the photoelectric conversion region to transfer the charges from the photoelectric conversion region to the floating diffusion region. The first trench-type isolation region is formed of a negative charge material.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: August 29, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Chak Ahn, Kyung Ho Lee, Young Woo Jung, Seung Joo Nah, Hae Yong Park
  • Publication number: 20170236858
    Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.
    Type: Application
    Filed: February 6, 2017
    Publication date: August 17, 2017
    Inventors: YOUNG SUN OH, YI TAE KIM, JUNG CHAK AHN
  • Publication number: 20170229500
    Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 10, 2017
    Inventors: Jun Suk LEE, Jung Chak AHN, Hee Geun JEONG, Kyung Ho LEE
  • Publication number: 20170207264
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Application
    Filed: April 3, 2017
    Publication date: July 20, 2017
    Inventors: Young-Sun OH, Kyung-Ho LEE, Jung-Chak AHN, Hee-Geun JEONG
  • Patent number: 9711557
    Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: July 18, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seungjoo Nah, Jung-Chak Ahn, Kyung-Ho Lee