Abstract: A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials.

Abstract: An image sensor includes a first photo detecting device disposed in a central region of a pixel array portion and a second photo detecting device disposed in an edge of the pixel array portion. The second photo detecting device has a full well capacity which is less than a full well capacity of the first photo detecting device. An imaging device includes the image sensor and an image signal process. The image signal processor compensates for a lens shading effect and a difference between the full well capacity of the first photo detecting device and the full well capacity of the second photo detecting device.

Abstract: A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor may include a photo detecting device and a charge storage device. The image sensor may further include a trench and a shield which blocks light from being absorbed by the charge storage device. The charge storage device may temporarily store accumulated charges by the photo detecting device.

Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses.

Abstract: An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated.

Abstract: An image sensor cell, wherein at least one of a plurality of transistors included in image sensor cell is a recess transistor having a channel region recessed into a substrate. The image sensor cell includes an image charge generating unit for generating an image charge corresponding to an image signal, and an image charge converting unit for converting the image charge into an electrical signal, wherein at least one of a plurality of transistors included in the image charge converting unit is a recess transistor including a channel region that is recessed into a substrate.

Abstract: A pixel of an image sensor includes a color filter configured to pass visible wavelengths, and an infrared cut-off filter disposed on the color filter configured to cut off infrared wavelengths.

Abstract: A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.

Abstract: A pedestal level compensation method includes calculating a dark level difference error depending on temperature, calculating a pedestal level offset depending on an analog gain, and compensating a pedestal level according to the dark level difference error and the pedestal level offset.

Abstract: A pixel of an image sensor includes a color filter configured to pass visible wavelengths, and an infrared cut-off filter disposed on the color filter configured to cut off infrared wavelengths.

Abstract: An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract: The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode.

Abstract: A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The floating diffusion region may have a first conductivity type, the photodiode may include a first semiconductor region of a second conductivity type disposed on a second semiconductor region of the first conductivity type, and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode.

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

Abstract: An image sensor including a semiconductor layer including a plurality of unit pixels each including a photoelectric conversion device and read devices; and an insulating layer including a light-shielding pattern defining a light-receiving region and a light-shielding region of the semiconductor layer, the insulating layer covering one surface of the semiconductor layer. The semiconductor layer further includes a potential drain region formed adjacent to an interface between the semiconductor layer and an insulating layer in the light-shielding region, wherein electrons generated due to defects occurring at the interface are accumulated in the potential drain region. At least one of the unit pixels in the light-shielding region provides a drain path for draining the electrons accumulated in the potential drain region.

Abstract: A unit pixel of an image sensor is provided. The unit pixel includes a photoelectric conversion element configured to generate photocharge varying with the intensity of incident light, a transfer transistor configured to transfer the photocharge to a floating diffusion in response to a transfer control signal, and a supplemental transistor connected to the floating diffusion. Because the unit pixel includes only one transistor in addition to the transfer transistor, the area of the unit pixel is minimized, and, as a result, the resolution of a pixel array is increased and the power consumption of the pixel array is decreased.