Abstract: Provided are a rapid antimicrobial susceptibility test, based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and an automated cell image analysis system therefor. The antimicrobial susceptibility test is rapidly performed based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and this makes it possible to obtain highly reliable test results faster by six to seven times than the standard method recommended by Clinical and Laboratory Standards Institute (CLSI).

Abstract: An automatic cardiopulmonary resuscitation device and a control method therefor are disclosed. The automatic cardiopulmonary resuscitation device comprises: a movable chest compressor for repeatedly pressing a patient's chest at a preset depth and cycle; a cardiac output measurement unit for measuring a cardiac output of the patient in accordance with the pressurization of the chest compressor; and a processor for changing pressing locations by performing control such that the chest compressor moves according to a preset method, wherein the processor controls the cardiac output measurement unit such that the cardiac output measurement unit measures the patient's cardiac output at each of the changed pressurized locations, selects a pressing location at which the patient's cardiac output becomes the maximum on the basis of the measured cardiac output, and performs control such that the chest compressor moves to the pressing location at which the patient's cardiac output becomes the maximum.

Abstract: The present invention relates to a blood pump. The blood pump according to the present invention includes: a housing including an inlet, through which blood flows, at an upper part of the housing and an outlet, through which the blood is discharged, along an edge of the housing; an impeller part, which is rotatable and disposed inside the housing, including a plurality of blades on the surface thereof so as to move the blood flowing in through the inlet toward the outlet by using a centrifugal force; a rotary shaft member disposed to penetrate the center part of the impeller part so as to support the impeller part to be rotatable which moves the blood to the lower part thereof; and a magnetic body disposed on the impeller part for rotating the impeller part in a predetermined direction according to a change in a magnetic field outside the housing.

Abstract: Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.

Abstract: Methods are described for a cyclical deposition and curing process. More particularly, the implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films.

Abstract: Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation.

Abstract: Methods are described for a cyclical deposition and curing process. More particularly, the implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films.

Abstract: Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation.

Abstract: Provided are a rapid antimicrobial susceptibility test, based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and an automated cell image analysis system therefor. The antimicrobial susceptibility test is rapidly performed based on an analysis of changes in morphology and growth pattern of a microbial cell under different concentrations of various antimicrobial agents, and this makes it possible to obtain highly reliable test results faster by six to seven times than the standard method recommended by Clinical and Laboratory Standards Institute (CLSI).

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract: A cytokine adsorption sheet comprises a nanofiber web formed by electrospinning a spinning solution prepared by mixing an adsorbent material capable of adsorbing cytokine and an electrospinnable polymer material. Thus, the dissolution of the adsorbent material by blood can be prevented.

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract: A drug infusion pump is provided. The drug infusion pump includes a main body including a drive motor and a processor, and a cartridge module including a pump module and a drug cartridge and detachably provided in the main body. When the cartridge module is fitted in the main body, the pump module and the drug cartridge are accommodated in the main body and the pump module is coupled to the drive motor. The drug infusion pump is configured such that the pump module is coupled with the drive motor when the cartridge module is fitted in the main body. Accordingly, the cartridge may be easily separated and replaced so as to address a problem of a patient's inconvenience in using the drug infusion pump.

Abstract: A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one of the epitaxial blocking layers, and using a SEG process to form an epitaxial layer on respective source/drain regions while shielding the other source/drain regions with a remaining epitaxial blocking layer.

Abstract: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.

Abstract: A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

Abstract: A polymer valve and a ventricular assist device using the polymer valve are provided to allow blood to flow in a first direction but prevents blood from flowing backward in a second direction opposite to the first direction. The polymer valve comprises a base body having a hollow therethrough for passing of blood, comprising a pair of support legs formed by cutting opposing sides of an end portion of the base body along an inclined surface toward the center line of the hollow to extend toward the first direction from the body , and a leaflet formed of polymer and attached to the support legs to cover the hollow, wherein the leaflet includes a pair of opposing sides attached to the cutting surfaces of the support legs and an end portion connecting the sides of the leaflet, wherein the leaflet is formed of an opening between the support legs.

Abstract: A ventricular assist device includes a case, a pair of blood bags and a squeezing unit. The blood bags are installed inside the case. Each of the blood bags includes an inlet port connected to a ventricle of a heart to introduce therethrough blood flowing out from the ventricle, an internal space formed to store the blood introduced through the inlet port and an outlet port connected to an artery to discharge therethrough the blood stored in the internal space. The internal space has a variable volume. The squeezing unit is installed inside the case. The squeezing unit is configured to alternately squeeze the blood bags in such a way that, if one of the blood bags is squeezed to discharge the blood, the other blood bag is inflated to draw the blood.

Abstract: Methods of forming integrated circuit substrates include forming first and second trenches having unequal widths in a semiconductor substrate and then depositing a first oxide layer at a first temperature into the first and second trenches. The first oxide layer has a thickness sufficient to completely fill the first trench but only partially fill the second trench, which is wider than the first trench. A step is also performed to selectively remove a portion of the first oxide layer from a bottom of the second trench. A second oxide layer is then deposited at a second temperature onto the bottom of the second trench. The second temperature is greater than the first temperature. For example, the first temperature may be in a range from about 300° C. to about 460° C. and the second temperature may be in a range from about 500° C. to about 600° C.