Abstract: A page buffer of a flash memory device is configured to program two pages in a single programming operation. The page buffer of the flash memory device includes a first bit line selection unit, a second bit line selection unit, a separation unit, a precharge unit, a first register, and a second register.

Abstract: A memory device includes a main memory cell having a plurality of first memory cells for storing data, wherein a special block for storing a column address corresponding to a first memory cell having at least one failure is disposed in a part of area of the main memory cell; a start address block configured to store address information initiated by the special block of the main memory cell; and a repair information block configured to provisionally store the column address stored in the special block, and to output a repair controlling signal when operating the memory device.