Patents by Inventor Jung Geun Kim

Jung Geun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130035941
    Abstract: An electronic apparatus and a method for controlling thereof are provided. The method recognizes one of among a user voice and a user motion through one of among a voice recognition module and a motion recognition module, and if a user voice is recognized through the voice recognition module, performs a voice task corresponding to the recognized user voice, and, if a user motion is recognized through the motion recognition module, performs a motion task corresponding to the recognized user motion.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 7, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-geun KIM, Yoo-tai KIM, Seung-dong YU, Sang-jin HAN, Hee-seob RYU
  • Publication number: 20130033643
    Abstract: A method for controlling an electronic apparatus which uses voice recognition and motion recognition, and an electronic apparatus applying the same are provided. In a voice task mode, in which voice tasks are performed according to recognized voice commands, the electronic apparatus displays voice assistance information to assist in performing the voice tasks. In a motion task mode, in which motion tasks are performed according to recognized motion gestures, the electronic apparatus displays motion assistance information to aid in performing the motion tasks.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 7, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-geun KIM, Yoo-tai KIM, Seung-dong YU, Sang-jin HAN, Hee-seob RYU
  • Publication number: 20130033649
    Abstract: An electronic apparatus and a method for controlling thereof are provided. The method for controlling the electronic apparatus controls a level of a volume of a provided broadcast signal or provides another broadcast signal if a broadcast signal is provided in response to a recognized user motion, and changes at least part of a screen on which a provided content is displayed if a content is provided in response to the recognized user motion.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 7, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-geun KIM, Yoo-tai KIM, Seung-dong YU, Sang-jin HAN, Hee-seob RYU
  • Publication number: 20130033644
    Abstract: An electronic apparatus and a method for controlling thereof are provided. The method for controlling of the electronic apparatus includes: recognizing one of among a user voice and a user motion through one of among a voice recognition module and a motion recognition module, and, performing a voice task in response to a user voice is recognized through the voice recognition module, and, performing a motion task in response to a user motion is recognized through the motion recognition module.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 7, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-geun KIM, Yoo-tai KIM, Seung-dong YU, Sang-jin HAN, Hee-seob RYU
  • Publication number: 20130035942
    Abstract: An electronic apparatus and a method for providing a user interface (UI) thereof are provided. Specifically, an electronic apparatus which displays an executable icon of an application which is controllable through voice recognition distinctively from an executable icon of an application which is uncontrollable through voice recognition in a voice task mode, and a method for providing UI thereof are provided. Some of the disclosed exemplary embodiments provide an electronic apparatus which is capable of recognizing a user voice command and a user motion gesture, and displays an executable icon of an application which is controllable through voice recognition and a name of the executable icon distinctively from an executable icon of an application which is uncontrollable through voice recognition and a name of the executable icon in a voice task mode, and a method for providing a UI thereof.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 7, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-geun KIM, Yoo-tai KIM, Seung-dong YU, Sang-jin HAN, Hee-seob RYU
  • Publication number: 20120280397
    Abstract: A method of manufacturing a semiconductor device includes forming an interlayer dielectric layer, forming trenches by etching the interlayer dielectric layer, forming a copper (Cu) layer to fill the trenches, and implanting at least one of an inert element, a nonmetallic element, and a metallic element onto a surface of the Cu layer.
    Type: Application
    Filed: May 3, 2012
    Publication date: November 8, 2012
    Inventors: Jung Geun KIM, Whee Won Cho, Eun Soo Kim
  • Publication number: 20120179969
    Abstract: A display apparatus is provided including a user interface unit which displays a plurality of icons and a control unit which, if a stretch motion of widening a touch point while one of the plurality of icons is touched, controls the user interface unit to execute part of a function corresponding to the icon and display a function window corresponding to the part of functions.
    Type: Application
    Filed: January 10, 2012
    Publication date: July 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-heon LEE, Gyung-hye YANG, Jung-geun KIM, Soo-yeoun YOON, Sun-haeng JO, Yoo-tai KIM
  • Patent number: 8217905
    Abstract: A method and apparatus for a touchscreen based user interface (UI) interaction that controls a volume through circular UI graphics and switches between different application images by dragging an indicator on a touchscreen of a terminal device. The method includes: displaying an application image on a touchscreen; sensing whether the touchscreen is touched on the displayed application image; if the touchscreen is touched, displaying a volume image to control an audio volume at a touch position; and changing a size of the volume image whenever the touchscreen is touched and controlling the audio volume to corresponding to the size of the volume region.
    Type: Grant
    Filed: November 16, 2007
    Date of Patent: July 10, 2012
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jung-geun Kim, Bo-eun Park, Jong-sung Joo
  • Publication number: 20120144347
    Abstract: A display device and a control method thereof are provided. The display device includes: a touch screen which displays a screen and senses a gesture of a user on the screen; a video processor which process an image for displaying the screen; a communication unit which performs communication with at least one neighboring device; and a controller which performs control to display a miniature image of a screen of contents being displayed and a first user interface (UI) item showing a connected neighboring device of the at least one neighboring device if a first gesture of a user is made while displaying the screen corresponding to predetermined contents, and to transmit information for sharing the contents to the corresponding neighboring device in accordance with a second gesture of a user with regard to the miniature image and the first UI item.
    Type: Application
    Filed: December 7, 2011
    Publication date: June 7, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sun-haeng JO, Gyung-hye YANG, Dong-heon LEE, Jung-geun KIM, Soo-Yeoun YOON, Yoo-tai KIM
  • Patent number: 8163627
    Abstract: A method of forming an isolation layer of a semiconductor device is disclosed herein, the method comprising the steps of providing a semiconductor substrate in which a tunnel insulating layer and a charge storage layer are formed on an active area and a trench is formed on an isolation area; forming a first insulating layer for filling a lower portion of the trench; forming a porous second insulating layer on the first insulating layer for filling a space between the charge storage layers; forming a third insulating layer on a side wall of the trench and the second insulating layer, the third insulating layer having a density higher than that of the second insulating layer; and forming a porous fourth insulating layer for filling the trench.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: April 24, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jung Geun Kim, Eun Soo Kim, Seung Hee Hong, Suk Joong Kim
  • Patent number: 8138077
    Abstract: A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, a first trench penetrating the dielectric layer on the isolation layer to separate parts of the dielectric layer, a second trench formed on the isolation layer and expanded from the first trench, and a second conductive layer formed over the dielectric layer to fill the first and second trenches.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: March 20, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Whee Won Cho, Nam Woo So, Cheol Mo Jeong, Eun Gyeong Jang, legal representative, Jung Geun Kim
  • Publication number: 20120032908
    Abstract: A method for providing a user interface (UI) and a multimedia apparatus using the same in which, if a multipoint stroke in which at least two strokes are concurrently input is detected on the touch screen, the touch screen performs a function corresponding to the multipoint stroke. A user can touch the touch screen to perform functions of various types using such a multipoint stroke.
    Type: Application
    Filed: October 13, 2011
    Publication date: February 9, 2012
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Jong-Sung JOO, Bo-eun PARK, Jung-geun KIM
  • Patent number: 7977205
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. Sidewalls and a bottom surface of each of the first trenches are oxidized by a radical oxidization process to form a first oxide layer. An oxidization-prevention spacer is formed on the sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches, wherein each second trench is narrower and deeper than the corresponding first trench. The second trenches are filled with a second oxide layer. The first trenches are filled with an insulating layer.
    Type: Grant
    Filed: June 14, 2010
    Date of Patent: July 12, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Cha Deok Dong, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee
  • Patent number: 7960231
    Abstract: A method of forming a semiconductor memory device includes forming a tunnel insulating layer on a semiconductor substrate, and forming a silicon layer, including metal material, on the tunnel insulating layer. Accordingly, an increase in the strain energy of the conductive layer may be prohibited and, therefore, the growth of grains constituting the conductive layer may be prevented. Furthermore, a threshold voltage distribution characteristic and electrical properties of a semiconductor memory device may be improved.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: June 14, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jung Geun Kim, Seong Hwan Myung, Eun Soo Kim
  • Publication number: 20110134071
    Abstract: A display apparatus and a touch sensing method are provided. The display apparatus includes a touch screen which senses a touch by a user using a plurality of sensing types; and a controller which selects a sensing type based on an application. Therefore, a user's touch is sensed using an optimal sensing type for each application. In doing so, malfunction or inconvenience in manipulating the touch screen can be reduced.
    Type: Application
    Filed: May 17, 2010
    Publication date: June 9, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-geun KIM, Yoo-tai KIM, Dong-heon LEE, Jung-hoon SHIN, Jung-a KIM
  • Patent number: 7897504
    Abstract: A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.
    Type: Grant
    Filed: May 11, 2007
    Date of Patent: March 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jung Geun Kim, Cheol Mo Jeong, Whee Won Cho, Seong Hwan Myung
  • Patent number: 7892919
    Abstract: The invention discloses a method of forming an isolation layer in a semiconductor device. The method includes providing a semiconductor substrate having a trench formed therein; forming a first insulating layer in the trench; and forming a densified second insulating layer on the first insulating layer. In the above method, a void is not generated in the isolation layer so a bending phenomenon of an active region can be reduced or prevented to improve an electrical characteristic of the semiconductor.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: February 22, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jung Geun Kim, Cheol Mo Jeong, Whee Won Cho
  • Patent number: 7851350
    Abstract: The present invention relates to a semiconductor device and a method of forming a contact plug of a semiconductor device. According to the method, a first dielectric layer is formed on a semiconductor substrate in which junction regions are formed. A hard mask is formed on the first dielectric layer. The hard mask and the first dielectric layer corresponding to the junction regions are etched to form trenches. Spacers are formed on sidewalls of the trenches. Contact holes are formed in the first dielectric layer using an etch process employing the spacers and the hard mask so that the junction regions are exposed. The contact holes are gap filled with a conductive material, thus forming contact plugs. Accordingly, bit lines can be easily formed on the contact plugs formed at narrow spaces with a high density.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: December 14, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Whee Won Cho, Jung Geun Kim, Eun Soo Kim
  • Publication number: 20100304549
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. Sidewalls and a bottom surface of each of the first trenches are oxidized by a radical oxidization process to form a first oxide layer. An oxidization-prevention spacer is formed on the sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches, wherein each second trench is narrower and deeper than the corresponding first trench. The second trenches are filled with a second oxide layer. The first trenches are filled with an insulating layer.
    Type: Application
    Filed: June 14, 2010
    Publication date: December 2, 2010
    Applicant: Hynix Semiconductor Inc.
    Inventors: Cha Deok DONG, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee
  • Patent number: 7736991
    Abstract: A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. A spacer is formed on sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches. Each second trench is narrower and deeper than the corresponding first trench. A first oxide layer is formed on sidewalls and a bottom surface of each of the second trenches. The first trench is filled with an insulating layer.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: June 15, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Cha Deok Dong, Whee Won Cho, Jung Geun Kim, Cheol Mo Jeong, Suk Joong Kim, Jung Gu Lee