Patents by Inventor Jung Gun Heo
Jung Gun Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10504726Abstract: A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.Type: GrantFiled: June 16, 2017Date of Patent: December 10, 2019Assignee: SK HYNIX INC.Inventors: Keun Do Ban, Jung Gun Heo, Cheol Kyu Bok, Myoung Soo Kim
-
Patent number: 9911605Abstract: A method of forming fine patterns includes forming pillars arrayed in rows and columns on an underlying layer and forming a spacer layer on the underlying layer to cover the pillars. Portions of the spacer layer respectively covering the pillars arrayed in each row or in each column are in contact with each other to provide first interstitial spaces disposed between the pillars arrayed in a diagonal direction between a row direction and a column direction as well as to provide cleavages at corners of each of the first interstitial spaces in a plan view. A healing layer is formed on the spacer layer to fill the cleavages of the first interstitial spaces. The healing layer is formed to provide second interstitial spaces respectively located in the first interstitial spaces as well as to include a polymer material.Type: GrantFiled: August 15, 2016Date of Patent: March 6, 2018Assignee: SK Hynix Inc.Inventors: Jung Gun Heo, Hong Ik Kim, Keun Do Ban, Cheol Kyu Bok, Young Sik Kim
-
Publication number: 20170287702Abstract: A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.Type: ApplicationFiled: June 16, 2017Publication date: October 5, 2017Inventors: Keun Do BAN, Jung Gun HEO, Cheol Kyu BOK, Myoung Soo KIM
-
Publication number: 20170271149Abstract: A method of forming fine patterns includes forming pillars arrayed in rows and columns on an underlying layer and forming a spacer layer on the underlying layer to cover the pillars. Portions of the spacer layer respectively covering the pillars arrayed in each row or in each column are in contact with each other to provide first interstitial s paces disposed between the pillars arrayed in a diagonal direction between a row direction and a column direction as well as to provide cleavages at corners of each of the first interstitial spaces in a plan view. A healing layer is formed on the spacer layer to fill the cleavages of the first interstitial spaces. The healing layer is formed to provide second interstitial spaces respectively located in the first interstitial spaces as well as to include a polymer material.Type: ApplicationFiled: August 15, 2016Publication date: September 21, 2017Inventors: Jung Gun HEO, Hong Ik KIM, Keun Do BAN, Cheol Kyu BOK, Young Sik KIM
-
Patent number: 9691614Abstract: A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends froType: GrantFiled: August 22, 2016Date of Patent: June 27, 2017Assignee: SK Hynix Inc.Inventors: Keun Do Ban, Jong Cheon Park, Jung Gun Heo, Hong Ik Kim, Cheol Kyu Bok
-
Patent number: 9666448Abstract: A method of forming patterns includes forming an array of pillars on an underlying layer stacked on an etch target layer, forming a separation wall layer on the pillars to provide separation walls covering sidewalls of the pillars, forming a block copolymer layer on the separation wall layer, annealing the block copolymer layer to form first domains located between the pillars, and a second domain surrounding and isolating the first domains, selectively removing the first domains to form second openings, selectively removing the pillars to form fourth openings, forming fifth openings that extend from the second and fourth openings to penetrate the underlying layer, forming a sealing pattern that covers and seals dummy openings among the fifth openings, and forming seventh openings that extend from the fifth openings exposed by the sealing pattern to penetrate the etch target layer.Type: GrantFiled: August 27, 2015Date of Patent: May 30, 2017Assignee: SK Hynix Inc.Inventors: Keun Do Ban, Hong Ik Kim, Jung Gun Heo, Cheol Kyu Bok
-
Patent number: 9640399Abstract: A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.Type: GrantFiled: August 11, 2015Date of Patent: May 2, 2017Assignee: SK Hynix Inc.Inventors: Jung Gun Heo, Hong Ik Kim, Keun Do Ban, Cheol Kyu Bok
-
Patent number: 9523917Abstract: Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.Type: GrantFiled: April 25, 2016Date of Patent: December 20, 2016Assignee: SK Hynix Inc.Inventors: Keun Do Ban, Cheol Kyu Bok, Jung Gun Heo, Hong Ik Kim
-
Publication number: 20160358771Abstract: A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends froType: ApplicationFiled: August 22, 2016Publication date: December 8, 2016Inventors: Keun Do BAN, Jong Cheon PARK, Jung Gun HEO, Hong Ik KIM, Cheol Kyu BOK
-
Publication number: 20160293442Abstract: A method of forming patterns includes forming an array of pillars on an underlying layer stacked on an etch target layer, forming a separation wall layer on the pillars to provide separation walls covering sidewalls of the pillars, forming a block copolymer layer on the separation wall layer, annealing the block copolymer layer to form first domains located between the pillars, and a second domain surrounding and isolating the first domains, selectively removing the first domains to form second openings, selectively removing the pillars to form fourth openings, forming fifth openings that extend from the second and fourth openings to penetrate the underlying layer, forming a sealing pattern that covers and seals dummy openings among the fifth openings, and forming seventh openings that extend from the fifth openings exposed by the sealing pattern to penetrate the etch target layer.Type: ApplicationFiled: August 27, 2015Publication date: October 6, 2016Inventors: Keun Do BAN, Hong Ik KIM, Jung Gun HEO, Cheol Kyu BOK
-
Publication number: 20160293443Abstract: A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends froType: ApplicationFiled: September 10, 2015Publication date: October 6, 2016Inventors: Keun Do BAN, Jong Cheon PARK, Jung Gun HEO, Hong Ik KIM, Cheol Kyu BOK
-
Patent number: 9449840Abstract: A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends froType: GrantFiled: September 10, 2015Date of Patent: September 20, 2016Assignee: SK Hynix Inc.Inventors: Keun Do Ban, Jong Cheon Park, Jung Gun Heo, Hong Ik Kim, Cheol Kyu Bok
-
Publication number: 20160254154Abstract: A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.Type: ApplicationFiled: August 11, 2015Publication date: September 1, 2016Inventors: Jung Gun HEO, Hong Ik KIM, Keun Do BAN, Cheol Kyu BOK
-
Publication number: 20160238938Abstract: Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.Type: ApplicationFiled: April 25, 2016Publication date: August 18, 2016Inventors: Keun Do BAN, Cheol Kyu BOK, Jung Gun HEO, Hong Ik KIM
-
Patent number: 9354519Abstract: A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.Type: GrantFiled: February 12, 2015Date of Patent: May 31, 2016Assignee: SK Hynix Inc.Inventors: Keun Do Ban, Cheol Kyu Bok, Jung Gun Heo, Hong Ik Kim
-
Publication number: 20160077435Abstract: A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.Type: ApplicationFiled: February 12, 2015Publication date: March 17, 2016Inventors: Keun Do BAN, Cheol Kyu BOK, Jung Gun HEO, Hong Ik KIM
-
Patent number: 9218984Abstract: A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.Type: GrantFiled: March 25, 2014Date of Patent: December 22, 2015Assignee: SK hynix Inc.Inventors: Ki Lyoung Lee, Cheol Kyu Bok, Keun Do Ban, Jung Gun Heo
-
Patent number: 9165769Abstract: A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns.Type: GrantFiled: June 12, 2015Date of Patent: October 20, 2015Assignee: SK hynix Inc.Inventors: Keun Do Ban, Cheol Kyu Bok, Myoung Soo Kim, Jung Gun Heo
-
Publication number: 20150279661Abstract: A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns.Type: ApplicationFiled: June 12, 2015Publication date: October 1, 2015Inventors: Keun Do BAN, Cheol Kyu BOK, Myoung Soo KIM, Jung Gun HEO
-
Patent number: 9082718Abstract: Various embodiments are directed to fine pattern structures, such as fine pattern structures having block co-polymer materials, methods of forming fine pattern structures with block co-polymer materials, and methods of fabricating semiconductor devices including fine pattern structures with block co-polymer materials. According to some embodiments, a method of fabricating a fine pattern structure includes providing a layer of alternating protrusion portions and recess portions, forming polymer patterns in recess regions formed in the recess portions, forming brush patterns on top surfaces of the protrusion portions, forming first polymer block patterns on the brush patterns and second polymer block patterns on the polymer patterns, and removing the second polymer block patterns and the polymer patterns.Type: GrantFiled: April 7, 2014Date of Patent: July 14, 2015Assignee: SK HYNIX INC.Inventors: Keun Do Ban, Cheol Kyu Bok, Myoung Soo Kim, Jung Gun Heo