Patents by Inventor Jung-Hau Shiu
Jung-Hau Shiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948798Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.Type: GrantFiled: July 16, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
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Publication number: 20230260829Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Patent number: 11676852Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: GrantFiled: December 11, 2020Date of Patent: June 13, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Publication number: 20230154753Abstract: Methods of patterning semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a first dielectric layer over a semiconductor substrate; forming a first hard mask layer over the first dielectric layer; etching the first hard mask layer to form a first opening exposing a top surface of the first dielectric layer; performing a plasma treatment process on the top surface of the first dielectric layer and a top surface of the first hard mask layer; after performing the plasma treatment process, selectively depositing a spacer on a side surface of the first hard mask layer, the top surface of the first dielectric layer and the top surface of the first hard mask layer being free from the spacer after selectively depositing the spacer; and etching the first dielectric layer using the spacer as a mask.Type: ApplicationFiled: March 3, 2022Publication date: May 18, 2023Inventors: Jung-Hau Shiu, Ching-Yu Chang, Wei-Ren Wang, JeiMing Chen
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Publication number: 20220367293Abstract: In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.Type: ApplicationFiled: October 4, 2021Publication date: November 17, 2022Inventors: Jung-Hau Shiu, Ching-Yu Chang, Jei Ming Chen, Jr-Yu Chen, Tze-Liang Lee
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Patent number: 11282712Abstract: A method for manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate and forming a second insulating film on the first insulating film. The first insulating film is a tensile film having a first tensile stress and the second insulating film is either a tensile film having a second tensile stress that is less than the first tensile stress or a compressive film. The first insulating film and second insulating film are formed of a same material. A metal hard mask layer is formed on the second insulating film.Type: GrantFiled: December 23, 2019Date of Patent: March 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jung-Hau Shiu, Chung-Chi Ko, Tze-Liang Lee, Yu-Yun Peng
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Publication number: 20210343529Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.Type: ApplicationFiled: July 16, 2021Publication date: November 4, 2021Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
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Patent number: 11069528Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.Type: GrantFiled: September 26, 2019Date of Patent: July 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
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Patent number: 11049763Abstract: A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.Type: GrantFiled: November 25, 2019Date of Patent: June 29, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Kai Chen, Jung-Hau Shiu, Chia Cheng Chou, Chung-Chi Ko, Tze-Liang Lee, Chih-Hao Chen, Shing-Chyang Pan
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Publication number: 20210134656Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: ApplicationFiled: December 11, 2020Publication date: May 6, 2021Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Patent number: 10978301Abstract: Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.Type: GrantFiled: August 31, 2018Date of Patent: April 13, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Jung-Hau Shiu, Wei-Ren Wang, Shing-Chyang Pan, Tze-Liang Lee
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Patent number: 10867794Abstract: A hard mask formed over a patterned photoresist layer in a tri-layer photoresist and a method for patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a photoresist layer over a first hard mask layer; patterning the photoresist layer to form a plurality of openings in the photoresist layer; depositing a second hard mask layer over the photoresist layer, the second hard mask layer filling the plurality of openings, the second hard mask layer having a first etch selectivity relative to the first hard mask layer, the photoresist layer having a second etch selectivity relative to the first hard mask layer, the first etch selectivity being greater than the second etch selectivity; planarizing the second hard mask layer; removing the photoresist layer; and etching the first hard mask layer using the second hard mask layer as a mask.Type: GrantFiled: March 29, 2019Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Jung-Hau Shiu, Szu-Ping Tung, Chun-Kai Chen, Jen Hung Wang, Tze-Liang Lee
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Patent number: 10867839Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.Type: GrantFiled: June 15, 2018Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Ren Wang, Shing-Chyang Pan, Ching-Yu Chang, Wan-Lin Tsai, Jung-Hau Shiu, Tze-Liang Lee
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Publication number: 20200357634Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.Type: ApplicationFiled: July 27, 2020Publication date: November 12, 2020Inventors: Wan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
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Publication number: 20200312662Abstract: A hard mask formed over a patterned photoresist layer in a tri-layer photoresist and a method for patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a photoresist layer over a first hard mask layer; patterning the photoresist layer to form a plurality of openings in the photoresist layer; depositing a second hard mask layer over the photoresist layer, the second hard mask layer filling the plurality of openings, the second hard mask layer having a first etch selectivity relative to the first hard mask layer, the photoresist layer having a second etch selectivity relative to the first hard mask layer, the first etch selectivity being greater than the second etch selectivity; planarizing the second hard mask layer; removing the photoresist layer; and etching the first hard mask layer using the second hard mask layer as a mask.Type: ApplicationFiled: March 29, 2019Publication date: October 1, 2020Inventors: Ching-Yu Chang, Jung-Hau Shiu, Szu-Ping Tung, Chun-Kai Chen, Jen Hung Wang, Tze-Liang Lee
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Patent number: 10727045Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.Type: GrantFiled: April 30, 2018Date of Patent: July 28, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
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Publication number: 20200135488Abstract: A method for manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate and forming a second insulating film on the first insulating film. The first insulating film is a tensile film having a first tensile stress and the second insulating film is either a tensile film having a second tensile stress that is less than the first tensile stress or a compressive film. The first insulating film and second insulating film are formed of a same material. A metal hard mask layer is formed on the second insulating film.Type: ApplicationFiled: December 23, 2019Publication date: April 30, 2020Inventors: Jung-Hau SHIU, Chung-Chi KO, Tze-Liang LEE, Yu-Yun PENG
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Publication number: 20200135462Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.Type: ApplicationFiled: September 26, 2019Publication date: April 30, 2020Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
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Publication number: 20200090984Abstract: A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.Type: ApplicationFiled: November 25, 2019Publication date: March 19, 2020Inventors: Chun-Kai Chen, Jung-Hau Shiu, Chia Cheng Chou, Chung-Chi Ko, Tze-Liang Lee, Chih-Hao Chen, Shing-Chyang Pan
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Publication number: 20200075319Abstract: Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.Type: ApplicationFiled: August 31, 2018Publication date: March 5, 2020Inventors: Ching-Yu Chang, Jung-Hau Shiu, Wei-Ren Wang, Shing-Chyang Pan, Tze-Liang Lee